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Applied Physics Express

Fabrication of Ultrasmall High-Quality Bi2Sr2CaCu2O8+δIntrinsic Josephson Junctions

Tetsuro Matsumoto, Hiromi Kashiwaya, Hajime Shibata, Hiroshi Eisaki, Yoshiyuki Yoshida, Satoshi Kashiwaya

Published Sep 19, 2008• 5 citations
Publisher

Abstract

The fabrication of ultrasmall high-quality intrinsic Josephson junctions (IJJs) using a cuprate superconductor is critical for the realization of a qubit. We investigated the mechanism of damage induced by a Ga + beam in a Bi 2 Sr 2 CaCu 2 O 8+δ IJJ during focused ion beam (FIB) processing. On the basis of the results, we developed a process that allowed the successful fabrication of an ultrasmall and high-quality IJJ. The damage induced by the FIB is reduced by restricting the direction of the Ga + beam so that the junction area is not directly irradiated by the ion beam. The fabricated ultrasmall IJJ device has a junction area of 0.3 µm 2 and shows excellent current–voltage characteristics.

DOI
10.1143/apex.1.101701

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The fabrication of ultrasmall high-quality intrinsic Josephson junctions (IJJs) using a cuprate superconductor is critical for the realization of a qubit. We investigated the mechanism of damage induced by a Ga + beam in a Bi 2 Sr 2 CaCu 2 O 8+δ IJJ during focused ion beam (FIB) processing. On the basis of the results, we developed a process that allowed the successful fabrication of an ultrasmall and high-quality IJJ. The damage induced by the FIB is reduced by restricting the direction of the Ga + beam so that the junction area is not directly irradiated by the ion beam. The fabricated ultrasmall IJJ device has a junction area of 0.3 µm 2 and shows excellent current–voltage characteristics.
We fabricated submicron-sized intrinsic Josephson junctions by the focused-ion-beam (FIB) etching method. The principal result was a reduction of the in-plane junction area to 0.3 μm2 by direct FIB etching with no degradation in the critical transition temperature (Tc). In the current (I)–voltage (V) characteristics of these stacks, the gap structure and the normal state resistance are clearly observed together with a reduction of the Joule heating and disappearance of the branch structure. The Coulomb staircase structure was found in the I–V curves of submicron junctions as a result of their small effective capacitance of fF order.
Two-stacked intrinsic Josephson junctions (IJJs) on a Bi2Sr2CaCu2O8+δ(Bi-2212) whisker with a submicron hole are micromachined by a 3D focused ion beam (FIB) etching method. The junction area, the number of elementary junctions, and the loop area of the SQUIDs are 3, 20, and 0.42 μm2, respectively. The SQUIDs show typical I–V characteristics of IJJs with a critical current IC of 12 μA at 4.2 K. The modulation parameter βL(=2ICL/Φ0) is 6.4, and the inductance L of the SQUID is 1120 pH. That includes the inductances of the elementary junction around a SQUID loop. In a strong magnetic field, the Fraunhofer pattern is obtained and well fitted to the calculated value from the junction size, ΔB=Φ0/tW; t is the interlayer distance, and W is the junction width. In a low magnetic field, approximately 10% of the IC modulation corresponding to the value of βL is observed. Eighty G of the modulation period approximately agrees with the value calculated from the SQUID.
Abstract High Temperature Superconductor Josephson Junctions (HTS-JJs) are based on artificial grain boundaries. However, the layout of HTS Superconducting QUantum Interference Devices (SQUIDs) on a bi-crystal substrate was restricted. Therefore, we considered to form low noise nano-bridge JJs by Ga Focused Ion Beam (Ga-FIB) irradiation. An 100 nm thick and 4 μm wide YBa2Cu3O7-δ (YBCO) micro-channels protected by a 20 nm thick Au protection layer were irradiated by line scans of Ga-FIB (Acceleration voltage: 40 kV, Beam diameter: ∼30 nm) and they were became normal conductivity except for the restricted region. In those nano-bridges, W N = 500 nm and fluence Φ = 2.0×1015 ions/cm2 of the nano-bridge was I C = 170 μA and we confirmed Shapiro steps by microwave irradiation of f RF = 2 GHz.
Intrinsic Josephson junction (IJJ) stacks of cuprate superconductors have potential to be implemented as intrinsic phase qubits working at relatively high temperatures. We report success in fabricating submicron La2−x_{2-x}2−x​Srx_{x}x​CuO4_{4}4​ (LSCO) IJJ stacks carved out of single crystals. We also show a new fabrication method in which argon ion etching is performed after focused ion beam etching. As a result, we obtained an LSCO IJJ stack in which resistive multi-branches appeared. It may be possible to control the number of stacked IJJs with an accuracy of a single IJJ by developing this method.
Intrinsic Josephson junction (IJJ) stacks of cuprate superconductors have potential to be implemented as intrinsic phase qubits working at relatively high temperatures. We report success in fabricating submicron La2−xSrxCuO4 (LSCO) IJJ stacks carved out of single crystals. We also show a new fabrication method in which argon ion etching is performed after focused ion beam etching. As a result, we obtained an LSCO IJJ stack in which resistive multibranches appeared. It may be possible to control the number of stacked IJJs with an accuracy of a single IJJ by developing this method.
We investigate critical current (Ic) modulation of stacked Josephson junctions (SJJs) dc superconducting quantum interference device ( dc SQUID) on a Bi 2 Sr 2 CaCu 2 O 8+δ ( Bi -2212) whisker. A coupled SJJs with a completely perforated hole of 0.1 μ m × 0.2 μ m were fabricated by using a 3-D focused-ion-beam (FIB) etching method. Those dc SQUIDs exhibited uniform multi-branch structures and clearly oscillated critical current under external magnetic fields (He). With applying He, the clear periodic modulation patterns of Ic are obtained and well fitted to the calculated value from the loop area of 0.02 μm2.