Journal of Applied Physics

rf-electrometer using a carbon nanotube resonant tunneling transistor

Lorenz Lechner, Fan Wu, R. Danneau, Søren E. S. Andresen, Pertti Juhani Hakonen

Published Apr 15, 2010• 3 citations

Abstract

We have studied resonant tunneling transistors (RTT) made of single-walled carbon nanotube quantum dots in the Fabry–Pérot regime. We show sensitivity to input charge as high as 5×10−6 e/Hz1/2 with a carrier frequency of 719 MHz at 4.2 K. This result is comparable to the best values of charge sensitivity so far reported for radio frequency single electron transistors (rf-SET). Unlike SETs, whose operating temperature is limited as Coulomb blockade vanishes as 1/T, a RTT can operate at higher temperatures, since the dephasing length lϕ∝1/T2/3.

DOI: 10.1063/1.3387927

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