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Applied Physics Letters

NbN Josephson tunnel junctions for terahertz local oscillators

R. P. Robertazzi, Robert A. Buhrman

Published Dec 12, 1988• 15 citations
Publisher

Abstract

Rugged, high current density NbN1−xCx/MgO/NḃN1−xCx tunnel junctions have been fabricated and tested as voltage tunable Josephson junction terahertz oscillators. The emitted radiation from these junctions is detected on chip by a second junction which is capacitively coupled to the first. For oscillator junctions with a critical current density of Jc∼3.5×104 A/cm2 we find that the junction oscillates with a voltage amplitude of ∼1.5 mV. The detected rf voltage level remains essentially constant from 300 GHz to above 1 THz. The oscillator junction produces 0.5 μW of terahertz radiation of which, due to impedance mismatch, 0.01 μW is coupled into the detector junction.

DOI
10.1063/1.100213

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Rugged, high current density NbN1−xCx/MgO/NḃN1−xCx tunnel junctions have been fabricated and tested as voltage tunable Josephson junction terahertz oscillators. The emitted radiation from these junctions is detected on chip by a second junction which is capacitively coupled to the first. For oscillator junctions with a critical current density of Jc∼3.5×104 A/cm2 we find that the junction oscillates with a voltage amplitude of ∼1.5 mV. The detected rf voltage level remains essentially constant from 300 GHz to above 1 THz. The oscillator junction produces 0.5 μW of terahertz radiation of which, due to impedance mismatch, 0.01 μW is coupled into the detector junction.
Recent coupled Josephson junction experiments in our laboratory have demonstrated that high critical current density tunnel junctions can serve as effective local oscillators at frequencies up to and in excess of the gap sum frequency of the junction, i.e. well above 1 Terahertz for a niobium or niobium compound tunnel junction. While the details of the behavior of such a THz. oscillator were found not to be in accord with the predictions of the accepted theory of the A.C. Josephson effect in the gap region significant radiation could be capacitively coupled from the oscillator junction to an adjacent junction, sufficient for SIS mixer experiments at Terahertz frequencies. Research efforts are now under way to further extend and ex-pand these studies. A high critical current density all NbN tunnel junction system is now under development for Terahertz applications and a new set of coupled Josephson oscillator - SIS detector experiments is being initiated using NbN tunnel junc-tions. In this paper we will review the original coupled junction high frequency experiments and report on the recent progress of the current NbN tunnel junction experiments.
We report on the fabrication and properties of high current density NbN/AlN/NbN tunnel junctions for the application of superconducting SIS mixers in the submillimeter wave regions. Junctions having current densities as high as 50 kA/cm/sup 2/ exhibited a good Josephson tunneling behaviour, excellent terahertz response, and sensitive heterodyne mixing properties. Accurate values of junction capacitance were estimated by measuring dc-SQUID resonant steps for the design of tuning circuits. The measured specific capacitance gives values in the range of 20-200 fF//spl mu/m/sup 2/ for the current density range of 1-100 kA/cm/sup 2/. The NbN/AlN/NbN tunnel junctions were integrated with a NbN thin film antenna to investigate the terahertz responses and mixing tests in a quasi-optical testing system. Photon-assisted tunneling steps were clearly observed on the I-V curve with irradiation up to 1.02 THz, and a low-noise heterodyne mixing was demonstrated in the 300-GHz band.
By using a capacitively coupled set of Josephson tunnel junctions we have performed experiments on the feasibility of using a Josephson junction as a local oscillator at frequencies up to and in excess of the gap sum of the junction. One junction was biased to serve as a local oscillator, whose AC power output could be monitored by observing the constant voltage Josephson steps on the current-voltage characteristic of the second junction. Using this coupling scheme we have coupled large oscillator signal levels (∼ 12.5nW) into the detector junction. For frequencies below the gap sum frequency our measurements are consistent with the Werthamer theory. For bias voltages above the gap sum we observe an anomalously fast roll off of the detected power from the oscillator junction.
Josephson junctions (JJs) with non-hysteretic I-V characteristic and high critical parameters are required for many applications; in particular, they are needed to create tunable THz range oscillators. We fabricated and studied shunted superconductor-insulator-superconductor (SIS) Nb-AlOx-Nb tunnel junctions with an area of about 1μm2, estimated their parameters, and compared them with theoretical models. To assess the performance of shunted junctions in the terahertz range, their characteristics were studied under the influence of a high-frequency signal; the estimated value of the characteristic voltage for the shunted junction at a high frequency is about 1 mV. To improve the circuit parameters, a new type of the shunting based on application of NIS junctions was proposed, which reduces the influence of parasitic inductance, expands the frequency range of the generator, and decreases the size of the structure. The JJs with a new type of shunting have been fabricated and studied. The niobium integrated circuits intended for matching the superconducting oscillator and an SIS junction as a microwave detector were designed, fabricated, and tested. Such structures are required for studying the spectral characteristics and analyzing the operation of the oscillator. The developed circuits have demonstrated efficient operation at frequencies from 300 to 700 GHz; the experimental results are in good agreement with the simulated characteristics. The results obtained will be implemented for further development of the THz range oscillators.
For sensitive wideband spectroscopy at TeraHertz frequencies one needs a wide-range electrically tunable THz source and a sensitive detector. In this paper a superconducting normal metal cold electron bolometer (CEB) was used as a broadband sensor. Bolometers were integrated with broadband log-periodic antenna designed for 0.2-2 THz frequency range and double-dipole antennas designed for 300 and 600 GHz central frequency. A Josephson junction was used as a wide band electrically tuned terahertz cryogenic oscillator. Bicrystal YBaCuO Josephson junctions demonstrated a characteristic voltage IcRn of over 4 mV that corresponds to characteristic frequency about 2 THz. The bolometer chip is attached to a Si substrate lens at 260 mK and the oscillator chip is attached to the sapphire substrate lens at 1.8 K, with lenses facing each other at the distance of few centimeters. High signal was measured in the whole frequency range up to 1.7 THz by simple changing the bias voltage of Josephson junction from zero to 3.5 mV. A voltage response of the bolometer up to 4*108 V/W corresponds to an amplifier-limited technical noise equivalent power of the bolometer NEP=1.25*10-17 W/Hz1/2. Combining a Terahertz band Josephson junction, a high-sensitive hot electron bolometer, and a sample under test in between, makes it possible to develop a cryogenic compact Terahertz-band transmission spectrometer with a resolution below 1 GHz corresponding to the linewidth of Josephson oscillations. For frequencies below 600 GHz a conventional Nb shunted SIS junction can be used as Josephson oscillator.
Superconducting qubit circuits require high quality low critical current density Josephson tunnel junctions. We have developed high quality epitaxial NbN/AlN/NbN tunnel junctions with critical current density, Jc, ranging from as low as a few A/cm2to a few tens of kA/cm2. In this work, we measured current-voltage characteristics for junctions with a Jc~ 32 A/cm2in the temperature range from 17 mK to above 6.7 K. All the junctions are in good quality and have a high gap voltage (>; 5.5 mV). We found that the junctions' sub-gap resistances were temperature dependent above 2.5 K and saturated at temperatures below 2.5 K. A junction sub-gap leakage current Irof about 23 pA was measured. The voltage noise power spectral density for 3 junctions with different sizes has been measured at the base temperature of 17 mK with the junctions biased above the gap voltage. The spectral densities clearly show 1/fbehavior at low frequency and are proportional to the junction's linear dimension.