Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Physical Review B

Local field effect on Rabi oscillations of excitons localized to quantum islands in a single quantum well

Yasuyoshi Mitsumori, Atsushi Hasegawa, Masahide Sasaki, H. Maruki, F. Minami

Published Jun 30, 2005• 15 citations
Publisher

Abstract

Nonlinear optical response and optical coherence time of excitons localized to quantum islands in a $\mathrm{Ga}\mathrm{As}∕\mathrm{Al}\mathrm{Ga}\mathrm{As}$ single quantum well are studied by the three-pulse photon echo technique. At low temperature, the optical coherence time is estimated to be $1.8\phantom{\rule{0.3em}{0ex}}\mathrm{ns}$ from the decay of the photon echo signal. The decay profile for short time delay shows the strong dependence on the input pulse area of the third pulse. Rabi oscillations are also observed. The oscillations show nonlinear behavior affected by the pre-excited polarization. Such behavior can be qualitatively explained by the local field effect due to the exciton-exciton interaction between the localized excitons.

DOI
10.1103/physrevb.71.233305

Related papers

Anomalous photon echoes and Rabi oscillations of quantum dot excitons

Yasuyoshi Mitsumori, Atsushi Hasegawa, Masahide Sasaki +1 more

Optical coherence time and nonlinear optical response of excitons localized to quantum dots in a GaAs/AlGaAs single quantum well are investigated by the three-pulse photon echo technique. At low temperature, the optical coherence time is estimated to be 1.8 ns from the decay curve of the photon echo signal. The decay profile for short time delay shows the strong dependence on the input pulse area of the third pulse. Rabi oscillations are also observed. The oscillations exhibit nonlinear behavior, which is affected by the pre-excited polarization. Such behavior can be qualitatively explained by the local field effect due to the exciton-exciton interaction between the excitons.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Feb 9, 2006•0 citations

Nonlinear Rabi Oscillations of Excitons in Dense Quantum Dot System

Yasuyoshi Mitsumori, Atsushi Hasegawa, Sasaki, M. +2 more

Nonlinear optical response and optical coherence of excitons in semiconductor dense quantum dots in GaAs single quantum wells has been studied by using photon echo techniques. At low temperatures, the optical coherence is estimated to be 2 ns from the decay curve in the photon echo signal. Rabi oscillations are also observed. Unlike the results for a single quantum dot in the literature to date, the oscillation shows nonlinear behavior affected strongly by the pre-excited carrier density. The results can be explained by the theory of the local field correction originating from exciton-exciton interaction between the inter dots.

arXiv:cond-mat/0306086•Jun 4, 2003•0 citations

Excitonic Rabi oscillations in self-assembled quantum dots in the presence of a local field effect

Kenta Asakura, Yasuyoshi Mitsumori, Hideo Kosaka +5 more

We experimentally studied the excitonic Rabi oscillations in self-assembled semiconductor quantum dots using two-pulse photon echo spectroscopy. We observed the change in the shape of the Rabi oscillations by the second pulse intensity. Our experimental results were systematically reproduced by numerical calculations taking into account the local field effect arising from the Coulomb interaction between photoinduced charge densities in a quantum dot. Our experimental findings indicated that the local field effect contributes considerably to the coherent optical responses of the excitons in quantum dots.

Physical Review B•Jun 7, 2013•10 citations

Nonlinear Response of Localized Excitons: Effects of the Excitation-Induced Dephasing

Paola Borri, W. Langbein, D. Birkedal +2 more

The polarization dependence of the ultrafast nonlinear response of localized excitons in GaAs/AlGaAs quantum wells has been investigated by spectrally resolved, transient four-wave mixing. The role of the excitation-induced dephasing in the delay dependence of the signal is discussed in detail. In particular, we show experimentally that the excitation-induced dephasing gives rise to a photon echo in inhomogeneous systems. We develop a simple analytical model for the delay dependence of the signal, which enables us to deduce the dephasing time from the four-wave mixing decay.

physica status solidi (a)•Nov 1, 1997•8 citations

Picosecond Nonlinear Optical Studies of Exciton Relaxation in Multiple Quantum Well Structures.

Michael D. Webb

This work presents new results of experimental studies of exciton relaxation in GaAs/AlGaAs multiple quantum well materials, using transient nonlinear laser spectroscopy techniques. In the low excitation regime, effective optical Bloch equations similar to the density matrix formalism of a two-level system describe the response. Solutions of these equations appropriate for three-pulse scattering studies are presented, along with a discussion of new experimental techniques used in this work. Non-ideal conditions present in the molecular beam epitaxy growth process introduce monolayer fluctuations in the quantum well thickness, leading to inhomogeneous broadening and exciton localization at sites of minimum energy. Localized excitons are separated in energy from extended, quasi-delocalized states by the mobility edge. Studies of localized exciton relaxation indicate that these excitons relax on a much slower timescale than delocalized excitons. The temperature dependence of the localized exciton relaxation rate shows that above 15K, the excitons are thermally activated to extended states above the mobility edge. Below 15K the excitons relax by phonon assisted migration between localization sites. For temperatures above 5K, and for exciton energies greater than 1 meV below line center, an extra dephasing mechanism characterizes the exciton relaxation. The inhomogeneous broadening of the exciton leads to the emission of stimulated photon echoes in the experimental geometry used in this work. The time-resolved emission demonstrates the stimulated photon echo nature at low excitation densities. At higher excitation densities, the decay dynamics is more complex. The time-resolved emission shows the presence of a stimulated photon echo and a free polarization decay. This unusual result suggests that both a homogeneous and an inhomogeneous exciton distribution comprise the exciton resonance. Exciton relaxation at low excitation densities represents the interaction of the exciton with the lattice. At higher excitation densities, exciton-exciton and exciton-free carrier interactions modify the relaxation rates. The dependence of the exciton relaxation rate on excitation density shows that many-body effects play an important role in the exciton physics. Free carrier interactions are more efficient at increasing the exciton relaxation rate; both types of interactions are more important in quantum well systems than in bulk materials.

•Jan 1, 1990•0 citations

Coherent Exciton and Biexciton Nonlinearities in Semiconductor Nanostructures: Effects of Disorder

W. Langbein, Paola Borri, J. M. Hvam

The coherent response of excitons in semiconductor nanostructures measured in four-wave mixing (FWM) depends strongly on the inhomogeneous broadening of the exciton transition. We investigate GaAs/Al0.3Ga0.7As single quantum wells (SQW) and AlxGa1-xAs mixed crystals. Additional to the usual phase-space filling nonlinearity, excitation-induced dephasing (EID) and biexciton formation (BIF) are important. EID leads to a strong dependence of the signal on the angle between the linear input polarizations. We find that EID persists in inhomogeneous systems, showing that the mutual density-dependent dephasing rate difference between two subsystems within the inhomogeneous distribution is strongly dependent on their energy difference. BIF is strongly affecting the cross-linear polarized FWM response. The signal for positive delay is dominated by the transitions from the one-exciton state X to the two-exciton states. Here, the third-order polarization at X-XX is not at the same resonance as the first-order polarization at 0-X. Consequently, the rephasing of the microscopic third-order polarization to the macroscopic FWM photon echo is blurred by the non-perfect correlation of X and XX energies, leading to a fast and non-exponential signal decay in delay time. For inhomogeneous broadenings larger than the biexciton binding energy, we find an enhanced biexciton binding energy, and a quenching of the oscillator strength of the unbound biexciton.

Materials science forum•Dec 1, 1998•5 citations
Nonlinear optical response and optical coherence time of excitons localized to quantum islands in a GaAs∕AlGaAs\mathrm{Ga}\mathrm{As}∕\mathrm{Al}\mathrm{Ga}\mathrm{As}GaAs∕AlGaAs single quantum well are studied by the three-pulse photon echo technique. At low temperature, the optical coherence time is estimated to be 1.8ns1.8\phantom{\rule{0.3em}{0ex}}\mathrm{ns}1.8ns from the decay of the photon echo signal. The decay profile for short time delay shows the strong dependence on the input pulse area of the third pulse. Rabi oscillations are also observed. The oscillations show nonlinear behavior affected by the pre-excited polarization. Such behavior can be qualitatively explained by the local field effect due to the exciton-exciton interaction between the localized excitons.
Optical coherence time and nonlinear optical response of excitons localized to quantum dots in a GaAs/AlGaAs single quantum well are investigated by the three-pulse photon echo technique. At low temperature, the optical coherence time is estimated to be 1.8 ns from the decay curve of the photon echo signal. The decay profile for short time delay shows the strong dependence on the input pulse area of the third pulse. Rabi oscillations are also observed. The oscillations exhibit nonlinear behavior, which is affected by the pre-excited polarization. Such behavior can be qualitatively explained by the local field effect due to the exciton-exciton interaction between the excitons.
Nonlinear optical response and optical coherence of excitons in semiconductor dense quantum dots in GaAs single quantum wells has been studied by using photon echo techniques. At low temperatures, the optical coherence is estimated to be 2 ns from the decay curve in the photon echo signal. Rabi oscillations are also observed. Unlike the results for a single quantum dot in the literature to date, the oscillation shows nonlinear behavior affected strongly by the pre-excited carrier density. The results can be explained by the theory of the local field correction originating from exciton-exciton interaction between the inter dots.
We experimentally studied the excitonic Rabi oscillations in self-assembled semiconductor quantum dots using two-pulse photon echo spectroscopy. We observed the change in the shape of the Rabi oscillations by the second pulse intensity. Our experimental results were systematically reproduced by numerical calculations taking into account the local field effect arising from the Coulomb interaction between photoinduced charge densities in a quantum dot. Our experimental findings indicated that the local field effect contributes considerably to the coherent optical responses of the excitons in quantum dots.
The polarization dependence of the ultrafast nonlinear response of localized excitons in GaAs/AlGaAs quantum wells has been investigated by spectrally resolved, transient four-wave mixing. The role of the excitation-induced dephasing in the delay dependence of the signal is discussed in detail. In particular, we show experimentally that the excitation-induced dephasing gives rise to a photon echo in inhomogeneous systems. We develop a simple analytical model for the delay dependence of the signal, which enables us to deduce the dephasing time from the four-wave mixing decay.
This work presents new results of experimental studies of exciton relaxation in GaAs/AlGaAs multiple quantum well materials, using transient nonlinear laser spectroscopy techniques. In the low excitation regime, effective optical Bloch equations similar to the density matrix formalism of a two-level system describe the response. Solutions of these equations appropriate for three-pulse scattering studies are presented, along with a discussion of new experimental techniques used in this work. Non-ideal conditions present in the molecular beam epitaxy growth process introduce monolayer fluctuations in the quantum well thickness, leading to inhomogeneous broadening and exciton localization at sites of minimum energy. Localized excitons are separated in energy from extended, quasi-delocalized states by the mobility edge. Studies of localized exciton relaxation indicate that these excitons relax on a much slower timescale than delocalized excitons. The temperature dependence of the localized exciton relaxation rate shows that above 15K, the excitons are thermally activated to extended states above the mobility edge. Below 15K the excitons relax by phonon assisted migration between localization sites. For temperatures above 5K, and for exciton energies greater than 1 meV below line center, an extra dephasing mechanism characterizes the exciton relaxation. The inhomogeneous broadening of the exciton leads to the emission of stimulated photon echoes in the experimental geometry used in this work. The time-resolved emission demonstrates the stimulated photon echo nature at low excitation densities. At higher excitation densities, the decay dynamics is more complex. The time-resolved emission shows the presence of a stimulated photon echo and a free polarization decay. This unusual result suggests that both a homogeneous and an inhomogeneous exciton distribution comprise the exciton resonance. Exciton relaxation at low excitation densities represents the interaction of the exciton with the lattice. At higher excitation densities, exciton-exciton and exciton-free carrier interactions modify the relaxation rates. The dependence of the exciton relaxation rate on excitation density shows that many-body effects play an important role in the exciton physics. Free carrier interactions are more efficient at increasing the exciton relaxation rate; both types of interactions are more important in quantum well systems than in bulk materials.
The coherent response of excitons in semiconductor nanostructures measured in four-wave mixing (FWM) depends strongly on the inhomogeneous broadening of the exciton transition. We investigate GaAs/Al0.3Ga0.7As single quantum wells (SQW) and AlxGa1-xAs mixed crystals. Additional to the usual phase-space filling nonlinearity, excitation-induced dephasing (EID) and biexciton formation (BIF) are important. EID leads to a strong dependence of the signal on the angle between the linear input polarizations. We find that EID persists in inhomogeneous systems, showing that the mutual density-dependent dephasing rate difference between two subsystems within the inhomogeneous distribution is strongly dependent on their energy difference. BIF is strongly affecting the cross-linear polarized FWM response. The signal for positive delay is dominated by the transitions from the one-exciton state X to the two-exciton states. Here, the third-order polarization at X-XX is not at the same resonance as the first-order polarization at 0-X. Consequently, the rephasing of the microscopic third-order polarization to the macroscopic FWM photon echo is blurred by the non-perfect correlation of X and XX energies, leading to a fast and non-exponential signal decay in delay time. For inhomogeneous broadenings larger than the biexciton binding energy, we find an enhanced biexciton binding energy, and a quenching of the oscillator strength of the unbound biexciton.