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IEEE International Superconductive Electronics Conference (ISEC)

Characterization of optical absorptance in superconducting nanowire single-photon detectors

Taro Yamashita, Shigehito Miki, Hirotaka Terai, Zhen Wang

Published Jul 1, 2013• 0 citations
Publisher

Abstract

We present a numerical simulation of the optical absorptance for the superconducting nanowire single-photon detectors (SNSPDs or SSPDs) designed with various layouts by using finite-element analysis software. The simulation results reveal that the electric field concentrated in the superconducting nanowire is enhanced by reducing the filling factor, and the degree of the enhancement becomes larger for thicker nanowires. Due to the large enhancement of the electric field in the nanowire with a double-side cavity structure, the high optical absorptance can be achieved even for the low-filling-factor layout by tuning the device design, which leads to the realization of SSPDs with high system detection efficiency and high counting rate.

DOI
10.1109/isec.2013.6604294

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International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)•Aug 1, 2015•0 citations
We present a numerical simulation of the optical absorptance for the superconducting nanowire single-photon detectors (SNSPDs or SSPDs) designed with various layouts by using finite-element analysis software. The simulation results reveal that the electric field concentrated in the superconducting nanowire is enhanced by reducing the filling factor, and the degree of the enhancement becomes larger for thicker nanowires. Due to the large enhancement of the electric field in the nanowire with a double-side cavity structure, the high optical absorptance can be achieved even for the low-filling-factor layout by tuning the device design, which leads to the realization of SSPDs with high system detection efficiency and high counting rate.
We designed, fabricated, and measured superconducting nanowire single-photon detectors (SSPDs) with low filling factor which achieve high system detection efficiency (SDE) and counting rate simultaneously. Numerical simulation reveals that high optical absorptance is possible in SSPDs even for low filing factor by tuning the device design. The SDEs of fabricated 18-50% filling factor SSPDs were measured systematically, and all SSPDs showed high SDEs of 61-80% and the lowest 18% filling factor SSPD achieved a high SDE of 69%.
Superconducting nanowire single-photon detectors (SNSPDs) with a composite optical structure composed of phase-grating and optical cavity structures are designed to enhance system detection efficiency and count rates. Numerical simulation by finite-difference time-domain method shows that the photon absorption capacity of SNSPDs with a composite optical structure can be enhanced significantly by adjusting the parameters of the phase-grating and optical cavity structures. The absorption capacity of the superconducting nanowires reached 69.8% at the wavelength of 850 nm with 0.3 filling factor. When the filling factor was reduced to only 0.08, the absorption capacity is still 48.52%. It greatly decreased the kinetic inductance of SNSPDs, and improved the count rates.
We designed a low-filling-factor and polarization-sensitive superconducting nanowire single photon detector (SNSPD), which can achieve a high absorption efficiency and counting rate simultaneously. Numerical simulations show that high absorption efficiency can be achieved by low-filling-factor SNSPDs with a silicon slot and silver reflector. The absorptance of the NbN nanowire for a transverse magnetic (TM) wave at the wavelength of 1550 nm can be 84.4% when the filling factor is only 16.5%, and the corresponding polarization extinction ratio (PER) is 562.9; the absorptance of the NbN nanowire for a transverse electric (TE) wave can be 67.0% when the filling factor is only 11.7%, and the PER is 7.4.
Single photon detection advanced rapidly in the last decade. The superconducting nanowire single-photon detector (SNSPD) is an emerging technology, which offers low dark count rates, broadband sensitivity from visible to mid-infrared wavelengths and very high quantum efficiency. All these features are appealing for future emerging applications in remote gas sensing, quantum key distribution and quantum information processing. By enclosing the detector in an optical cavity, tuned to the operating wavelength, the total system detection of the SNSPD is improved. Based on the cavity design, the detector absorption is boosted at the desired experimental wavelength. Devices have been fabricated and tested, in this thesis, with enhanced detection efficiency at near-infrared, infrared and mid-infrared wavelengths. NbTiN detectors fabricated on Ta2O5 / SiO2 distributed Bragg reflectors (DBR) for front-side coupling exhibit a system detection efficiency of ≈ 90% at λ = 940 nm for the best device measured. SNSPDs were also fabricated in NbTiN on metallic mirrors for back-side coupling for 1550 and 2333 nm experimental wavelengths. The first design exhibited a system detection efficiency of ≈ 84.5%, at λ = 1550 nm for the best device measured. The second exhibited low system detection efficiency since the device suffered from unexpectedly high dark count rate mainly due to blackbody radiation at 2.2 K. However, it was possible to measure the timing jitter of this device at 350 mK indicating a FWHM of 84 ps. Another technique to improve the total system detection efficiency of the SNSPD, is by fabricating a hairpin-shaped nanowire atop a single mode waveguide. In this design, photons travel through the waveguide and via evanescent coupling are absorbed in the nanowire. These SNSPD devices have been designed to thread along single mode Si ridge waveguides using a hairpin-shaped nanowire structure, which offers enhanced coupling and absorption efficiency via evanescent coupling. These ultra-thin superconducting MoSi detectors are precisely patterned on top of a single mode Si waveguide (600 nm) with alignment error less than 40 nm. Low temperature electrical and nano-optical characterization was carried out using a two-stage pulse tube (PT) coldhead, using an additional 4He / 3He sorption pump, low vibration characterization of SNSPD devices at 350 mK was carried out. Characterised devices exhibit low dark count rate <5 counts per second and timing jitter of ≈ 83 ps full width half maximum (FWHM) at wavelength (λ) = 1550 nm and at critical current ≈ 30 µA.
Implementations of quantum information require single-photon detectors (SPDs) with high detection efficiency (DE) at a wavelength of 940 nm, which is a challenge for the available semiconducting SPDs. Superconducting nanowire SPDs (SNSPDs) are capable of detecting visible and near-infrared single photons with high DE. However, these detection capabilities place stringent design requirements on the cavity and nanowire geometry structures. We design, fabricate, and measure SNSPDs with high DE optimized for the 940-nm wavelength. The NbN SNSPDs were fabricated on 1-D photonic crystals for high optical absorptance. By tuning the filling factor of the nanowire through numerical simulations and experiments, we were able to obtain an SNSPD (7 nm thick, 125 nm width, and 0.57 filling factor, as well as active area of18∗18 μm18\ast 18\ \mu\text{m}18∗18 μm) with a saturated system DE of 83.6$\pm3.73.7%, at a dark count rate of 10 Hz, and a low polarization dependence of 1.173.7\pm$0.02. To our best knowledge, this is the highest value reported for NbN SNSPDs at 940-nm wavelength. The availability of an SNSPD with high system DE at 940 nm may have a profound impact in the field of photonic quantum technologies, such as multiphoton entanglement.
Superconducting nanowire single photon detectors with an optical resonant cavity structure are fabricated directly on the single crystal substrate. In order to enhance the photons absorption of incident light and improve system detection efficiency (SDE) efficiently, the structure of SNSPD was designed and optimized using the finite-difference time-domain analysis for different kinds of substrates. The NbN-SNSPDs fabricated on different substrates are measured and compared. The SDE of NbN-SNSPD on MgO substrate reaches 66 % at the wavelength of 940nm at a dark count rate of 100 cps by illuminating from the back of the device through single mode optical fiber.