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Journal of Luminescence

Diode laser frequency stabilization to transient spectral holes and spectral diffusion in Er3+:Y2SiO5 at 1536nm

Thomas Böttger, Yazhou Sun, Geoff J. Pryde, G. D. Reinemer, R. L. Cone

Published Dec 1, 2001• 31 citations
Publisher
DOI
10.1016/s0022-2313(01)00324-6

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LASER FREQUENCY STABILIZATION TO SPECTRAL HOLE BURNING FREQUENCY REFERENCES IN ERBIUM-DOPED CRYSTALS: MATERIAL AND DEVICE OPTIMIZATION

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Narrow spectral holes in the absorption lines of Er doped crystals have been explored as references for frequency stabilizing external cavity diode lasers at the important 1.5 μm optical communication wavelength. Allan deviations of the beat signal between two independent stabilized lasers as low as 200 Hz over 10 ms integration time have been achieved using regenerative spectral holes in Er:Y2SiO5 and Er:KTP, while drift was reduced to ~ 7 kHz/min by incorporating the inhomogeneous absorption line as a fixed reference. During active stabilization, the transient spectral hole was continuously regenerated as hole burning balanced relaxation. In contrast, persistent spectral holes in Er:D:CaF2, with lifetimes of several weeks, provided programmable and transportable secondary frequency references that maintained sub-kilohertz stability over several seconds and enabled 6 kHz stability over 3 1.6 10 s × . The error signal was derived from the spectral hole transmission using frequency modulation spectroscopy. A servo amplifier applied fast frequency corrections to the injection current of the laser diode and slower adjustments to the piezo-driven feedback prism plate. These stabilized lasers provide ideal sources for spectral hole burning applications based on optical coherent transients, where laser stability is required over the storage time of the material. Since the lifetime of the frequency reference is exactly the material storage time, this requirement is automatically met by using our technique. This was demonstrated in Er:Y2SiO5 and successfully transferred to high-bandwidth signal processing applications. The material Er:Y2SiO5 was optimized for these applications. The I15/2 and I13/2 crystal field levels were site-selectively determined by absorption and fluorescence spectroscopy. The excited state lifetime was measured to be 11.4 ms for site 1 and 9.2 ms for site 2. Zeeman experiments and two-pulse photon echo spectroscopy as a function of magnetic field orientation were used to determine the anisotropic electronic g-values for both Er sites and established a preferred magnetic field orientation for minimizing homogeneous line broadening by spectral diffusion. The spectral diffusion was characterized by stimulated photon echo spectroscopy and successfully described with established theories. In a 0.02 atomic percent Er:Y2SiO5 crystal at B = 0.8 T and T = 1.6 K, line broadening became significant after 10 μs, increasing the homogeneous linewidth from 7.5 kHz to 75 kHz after 120 μs. Spectral diffusion, primarily caused by direct phonon driven Er spin-flips in the ground state, can be controlled to negligible levels with proper magnetic field strength and orientation, temperature, and erbium concentration. In optimizing Er:Y2SiO5, the narrowest optical resonance in any solid-state material of 73 Hz was measured.

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Spatial-spectral holography using spectral hole burning materials is a powerful technique for performing real-time, wide-bandwidth information storage and signal processing. For operation in the important 1.5 μm communication band, the material Er3+:Y2SiO5 enables applications such as laser frequency stabilization, all-optical correlators, analog signal processing, and data storage. Site-selective absorption and emission spectroscopy identified spectral hole burning transitions and excited state T1 lifetimes in the 1.5 μm spectral region. The effects of crystal temperature, Er3+-dopant concentration, magnetic field strength, and crystal orientation on spectral diffusion were explored using stimulated photon echo spectroscopy, which is the "prototype" interaction mechanism for device applications. The performance of Er3+:Y2SiO5 and related Er3+ materials has been dramatically enhanced by reducing the effect of spectral diffusion on the coherence lifetime T2 through fundamental material design coupled with the application of an external magnetic field oriented along specific directions. A preferred magnetic field orientation that maximized T2 by minimizing the effects of spectral diffusion was determined using the results of angle-dependent Zeeman spectroscopy. The observed linewidth broadening due to spectral diffusion was successfully modeled by considering the effect of one-phonon (direct) processes on Er3+ - Er3+ interactions. The reported studies improved our understanding of Er3+ materials, explored the range of conditions and material parameters required to optimize performance for specific applications, and enabled measurement of the narrowest optical resonance ever observed in a solid-with a homogeneous linewidth of 73 Hz. With the optimized materials and operating conditions, photon echoes were observed up to temperatures of 5 K, enabling 0.5 GHz bandwidth optical signal processing at 4.2 K and providing the possibility for operation with a closed-cycle cryocooler.

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We have frequency stabilized a Coherent CR699-21 dye laser to a transient spectral hole on the 606 nm transition in Pr^{+3}:Y_2SiO_5. A frequency stability of 1 kHz has been obtained on the 10 microsecond timescale together with a long-term frequency drift below 1 kHz/s. RF magnetic fields are used to repopulate the hyperfine levels allowing us to control the dynamics of the spectral hole. A detailed theory of the atomic response to laser frequency errors has been developed which allows us to design and optimize the laser stabilization feedback loop, and specifically we give a stability criterion that must be fulfilled in order to obtain very low drift rates. The laser stability is sufficient for performing quantum gate experiments in Pr^{+3}:Y_2SiO_5.

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Narrow spectral holes in the absorption lines of Er doped crystals have been explored as references for frequency stabilizing external cavity diode lasers at the important 1.5 μm optical communication wavelength. Allan deviations of the beat signal between two independent stabilized lasers as low as 200 Hz over 10 ms integration time have been achieved using regenerative spectral holes in Er:Y2SiO5 and Er:KTP, while drift was reduced to ~ 7 kHz/min by incorporating the inhomogeneous absorption line as a fixed reference. During active stabilization, the transient spectral hole was continuously regenerated as hole burning balanced relaxation. In contrast, persistent spectral holes in Er:D:CaF2, with lifetimes of several weeks, provided programmable and transportable secondary frequency references that maintained sub-kilohertz stability over several seconds and enabled 6 kHz stability over 3 1.6 10 s × . The error signal was derived from the spectral hole transmission using frequency modulation spectroscopy. A servo amplifier applied fast frequency corrections to the injection current of the laser diode and slower adjustments to the piezo-driven feedback prism plate. These stabilized lasers provide ideal sources for spectral hole burning applications based on optical coherent transients, where laser stability is required over the storage time of the material. Since the lifetime of the frequency reference is exactly the material storage time, this requirement is automatically met by using our technique. This was demonstrated in Er:Y2SiO5 and successfully transferred to high-bandwidth signal processing applications. The material Er:Y2SiO5 was optimized for these applications. The I15/2 and I13/2 crystal field levels were site-selectively determined by absorption and fluorescence spectroscopy. The excited state lifetime was measured to be 11.4 ms for site 1 and 9.2 ms for site 2. Zeeman experiments and two-pulse photon echo spectroscopy as a function of magnetic field orientation were used to determine the anisotropic electronic g-values for both Er sites and established a preferred magnetic field orientation for minimizing homogeneous line broadening by spectral diffusion. The spectral diffusion was characterized by stimulated photon echo spectroscopy and successfully described with established theories. In a 0.02 atomic percent Er:Y2SiO5 crystal at B = 0.8 T and T = 1.6 K, line broadening became significant after 10 μs, increasing the homogeneous linewidth from 7.5 kHz to 75 kHz after 120 μs. Spectral diffusion, primarily caused by direct phonon driven Er spin-flips in the ground state, can be controlled to negligible levels with proper magnetic field strength and orientation, temperature, and erbium concentration. In optimizing Er:Y2SiO5, the narrowest optical resonance in any solid-state material of 73 Hz was measured.
Spatial-spectral holography using spectral hole burning materials is a powerful technique for performing real-time, wide-bandwidth information storage and signal processing. For operation in the important 1.5 μm communication band, the material Er3+:Y2SiO5 enables applications such as laser frequency stabilization, all-optical correlators, analog signal processing, and data storage. Site-selective absorption and emission spectroscopy identified spectral hole burning transitions and excited state T1 lifetimes in the 1.5 μm spectral region. The effects of crystal temperature, Er3+-dopant concentration, magnetic field strength, and crystal orientation on spectral diffusion were explored using stimulated photon echo spectroscopy, which is the "prototype" interaction mechanism for device applications. The performance of Er3+:Y2SiO5 and related Er3+ materials has been dramatically enhanced by reducing the effect of spectral diffusion on the coherence lifetime T2 through fundamental material design coupled with the application of an external magnetic field oriented along specific directions. A preferred magnetic field orientation that maximized T2 by minimizing the effects of spectral diffusion was determined using the results of angle-dependent Zeeman spectroscopy. The observed linewidth broadening due to spectral diffusion was successfully modeled by considering the effect of one-phonon (direct) processes on Er3+ - Er3+ interactions. The reported studies improved our understanding of Er3+ materials, explored the range of conditions and material parameters required to optimize performance for specific applications, and enabled measurement of the narrowest optical resonance ever observed in a solid-with a homogeneous linewidth of 73 Hz. With the optimized materials and operating conditions, photon echoes were observed up to temperatures of 5 K, enabling 0.5 GHz bandwidth optical signal processing at 4.2 K and providing the possibility for operation with a closed-cycle cryocooler.
We have frequency stabilized a Coherent CR699-21 dye laser to a transient spectral hole on the 606 nm transition in Pr^{+3}:Y_2SiO_5. A frequency stability of 1 kHz has been obtained on the 10 microsecond timescale together with a long-term frequency drift below 1 kHz/s. RF magnetic fields are used to repopulate the hyperfine levels allowing us to control the dynamics of the spectral hole. A detailed theory of the atomic response to laser frequency errors has been developed which allows us to design and optimize the laser stabilization feedback loop, and specifically we give a stability criterion that must be fulfilled in order to obtain very low drift rates. The laser stability is sufficient for performing quantum gate experiments in Pr^{+3}:Y_2SiO_5.