Spatial-spectral holography using spectral hole burning materials is a powerful technique for performing real-time, wide-bandwidth information storage and signal processing. For operation in the important 1.5 μm communication band, the material Er3+:Y2SiO5 enables applications such as laser frequency stabilization, all-optical correlators, analog signal processing, and data storage. Site-selective absorption and emission spectroscopy identified spectral hole burning transitions and excited state T1 lifetimes in the 1.5 μm spectral region. The effects of crystal temperature, Er3+-dopant concentration, magnetic field strength, and crystal orientation on spectral diffusion were explored using stimulated photon echo spectroscopy, which is the "prototype" interaction mechanism for device applications. The performance of Er3+:Y2SiO5 and related Er3+ materials has been dramatically enhanced by reducing the effect of spectral diffusion on the coherence lifetime T2 through fundamental material design coupled with the application of an external magnetic field oriented along specific directions. A preferred magnetic field orientation that maximized T2 by minimizing the effects of spectral diffusion was determined using the results of angle-dependent Zeeman spectroscopy. The observed linewidth broadening due to spectral diffusion was successfully modeled by considering the effect of one-phonon (direct) processes on Er3+ - Er3+ interactions. The reported studies improved our understanding of Er3+ materials, explored the range of conditions and material parameters required to optimize performance for specific applications, and enabled measurement of the narrowest optical resonance ever observed in a solid-with a homogeneous linewidth of 73 Hz. With the optimized materials and operating conditions, photon echoes were observed up to temperatures of 5 K, enabling 0.5 GHz bandwidth optical signal processing at 4.2 K and providing the possibility for operation with a closed-cycle cryocooler.
Spatial-spectral holography using spectral hole burning materials is a powerful technique for performing real-time, wide-bandwidth information storage and signal processing. For operation in the important 1.5 μm communication band, the material Er3+:Y2SiO5 enables applications such as laser frequency stabilization, all-optical correlators, analog signal processing, and data storage. Site-selective absorption and emission spectroscopy identified spectral hole burning transitions and excited state T1 lifetimes in the 1.5 μm spectral region. The effects of crystal temperature, Er3+-dopant concentration, magnetic field strength, and crystal orientation on spectral diffusion were explored using stimulated photon echo spectroscopy, which is the "prototype" interaction mechanism for device applications. The performance of Er3+:Y2SiO5 and related Er3+ materials has been dramatically enhanced by reducing the effect of spectral diffusion on the coherence lifetime T2 through fundamental material design coupled with the application of an external magnetic field oriented along specific directions. A preferred magnetic field orientation that maximized T2 by minimizing the effects of spectral diffusion was determined using the results of angle-dependent Zeeman spectroscopy. The observed linewidth broadening due to spectral diffusion was successfully modeled by considering the effect of one-phonon (direct) processes on Er3+ - Er3+ interactions. The reported studies improved our understanding of Er3+ materials, explored the range of conditions and material parameters required to optimize performance for specific applications, and enabled measurement of the narrowest optical resonance ever observed in a solid-with a homogeneous linewidth of 73 Hz. With the optimized materials and operating conditions, photon echoes were observed up to temperatures of 5 K, enabling 0.5 GHz bandwidth optical signal processing at 4.2 K and providing the possibility for operation with a closed-cycle cryocooler.
Narrow spectral holes in the absorption lines of Er doped crystals have been explored as references for frequency stabilizing external cavity diode lasers at the important 1.5 μm optical communication wavelength. Allan deviations of the beat signal between two independent stabilized lasers as low as 200 Hz over 10 ms integration time have been achieved using regenerative spectral holes in Er:Y2SiO5 and Er:KTP, while drift was reduced to ~ 7 kHz/min by incorporating the inhomogeneous absorption line as a fixed reference. During active stabilization, the transient spectral hole was continuously regenerated as hole burning balanced relaxation. In contrast, persistent spectral holes in Er:D:CaF2, with lifetimes of several weeks, provided programmable and transportable secondary frequency references that maintained sub-kilohertz stability over several seconds and enabled 6 kHz stability over 3 1.6 10 s × . The error signal was derived from the spectral hole transmission using frequency modulation spectroscopy. A servo amplifier applied fast frequency corrections to the injection current of the laser diode and slower adjustments to the piezo-driven feedback prism plate. These stabilized lasers provide ideal sources for spectral hole burning applications based on optical coherent transients, where laser stability is required over the storage time of the material. Since the lifetime of the frequency reference is exactly the material storage time, this requirement is automatically met by using our technique. This was demonstrated in Er:Y2SiO5 and successfully transferred to high-bandwidth signal processing applications. The material Er:Y2SiO5 was optimized for these applications. The I15/2 and I13/2 crystal field levels were site-selectively determined by absorption and fluorescence spectroscopy. The excited state lifetime was measured to be 11.4 ms for site 1 and 9.2 ms for site 2. Zeeman experiments and two-pulse photon echo spectroscopy as a function of magnetic field orientation were used to determine the anisotropic electronic g-values for both Er sites and established a preferred magnetic field orientation for minimizing homogeneous line broadening by spectral diffusion. The spectral diffusion was characterized by stimulated photon echo spectroscopy and successfully described with established theories. In a 0.02 atomic percent Er:Y2SiO5 crystal at B = 0.8 T and T = 1.6 K, line broadening became significant after 10 μs, increasing the homogeneous linewidth from 7.5 kHz to 75 kHz after 120 μs. Spectral diffusion, primarily caused by direct phonon driven Er spin-flips in the ground state, can be controlled to negligible levels with proper magnetic field strength and orientation, temperature, and erbium concentration. In optimizing Er:Y2SiO5, the narrowest optical resonance in any solid-state material of 73 Hz was measured.
The mechanisms and effects of spectral diffusion for optical transitions of paramagnetic ions have been explored using the inhomogeneously broadened 1536 nm $^{4}\mathrm{I}_{15∕2}\ensuremath{\rightarrow}^{4}\mathrm{I}_{13∕2}$ transition in Er3+:Y2SiO5. Using photon echo spectroscopy, spectral diffusion was measured by observing the evolution of the effective coherence lifetimes over time scales from $1\phantom{\rule{0.3em}{0ex}}\ensuremath{\mu}\mathrm{s}$ to 20 ms for magnetic-field strengths from 0.3 to 6.0 T, temperatures from 1.6 to 6.5 K, and nominal Er3+ concentrations of 0.0015%, 0.005%, and 0.02%. To understand the effect of spectral diffusion on material decoherence for different environmental conditions and material compositions, data and models were compared to identify spectral diffusion mechanisms and microscopic spin dynamics. Observations were successfully modeled by ${\mathrm{Er}}^{3+}\ensuremath{-}{\mathrm{Er}}^{3+}$ magnetic dipole interactions and Er3+ electron spin flips driven by the one-phonon direct process. At temperatures of 4.2 K and higher, spectral diffusion due to 89Y nuclear spin flips was also observed. The success in describing our extensive experimental results using simple models provides an important capability for exploring larger parameter spaces, accelerating the design and optimization of materials for spatial-spectral holography, and spectral hole-burning devices. The broad insight into spectral diffusion mechanisms and dynamics is applicable to other paramagnetic materials, such as those containing Yb3+ or Nd3+.
The optical spectroscopy and dynamics of three materials; Eu^3+:Y2SiO5, Pr^3+:Y2SiO5, and Tm^3+:Y2SiO5 that are of interest for application in persistent spectral holeburning optical memory and signal processing devices were investigated using linear and nonlinear spectroscopic techniques.Two-pulse photon echoes have been used to measure the homogeneous linewidths.The effects of instantaneous spectral diffusion were systematically studied to allow accurate determination of the optical resonance widths, and external magnetic fields were applied to characterize the effects of fluctuating nuclear spins of the host lattice on dephasing of the dopant ion.The 7F0 → 5D0 transition of 0.1% Eu^3+ in the two crystallographic sites of Y2SiO5 was studied using photon echoes.Using this material, we succeeded in measuring the narrowest optical resonance in a solid by shielding the crystal from stray electromagnetic fields and using sufficiently low laser power to minimize contributions from instantaneous diffusion.The homogeneous linewidths measured in a magnetic field of 100 G are 122 Hz (site 1) and 167 Hz (site 2).These widths are dominated by population decay, but up to 20 Hz is attributed to 89Y spin fluctuations which have been reduced by the applied magnetic field.Similar studies were performed to determine the contributions to the homogeneous linewidth of the 3H4(1) → 1D2(1) transition for both sites of 0.02% Pr^3+ in Y2SiO5.Linewidths of 2.1 kHz (site 1) and 0.85 kHz (site 2) were obtained with an applied magnetic field of 77 G.A significant contribution of 89Y nuclear spin fluctuations to the zero-field homogeneous linewidth was found.Optically detected nuclear magnetic resonance measurements determined the hyperfine structure of the 3H4 ground state for each site, and photon echo nuclear double resonance was used to determine the hyperfine levels of the lowest component of the 1D2 manifold. 3) 2.1? Ec,2S
We report detailed studies of the optical decoherence and spectroscopic properties of the 1536-nm optical transition of the bandwidth-engineered material 0.02Er:1Eu:Y2SiO5. This work is motivated by the need for comprehensive understanding of new resonant optical materials for spatial-spectral holography and quantum information applications. The dependence of optical decoherence on excitation frequency, applied magnetic field strength and orientation, crystal temperature, measurement time scale, and optical excitation density was studied using stimulated photon echo spectroscopy and time-resolved spectral hole-burning techniques. The effects of weak disorder generated by the introduction of Eu3+ ions into the lattice was probed by comparing measurements across the static disorder-induced distribution of transition frequencies as well as by comparing with measurements on 0.02Er:Y2SiO5. The results reveal that the coherence properties of Er:Y2SiO5 are preserved in the disordered system; moreover, the increased inhomogeneity produced by the disorder acts to suppress optical decoherence by inhibiting the electronic spin diffusion process, improving material properties for low magnetic field strengths and at increased temperatures desirable for practical applications.
The influence of the anisotropic Zeeman effect on optical decoherence was studied for the 1.54 μm telecom transition in Er3+:Y2SiO5 using photon echo spectroscopy as a function of applied magnetic field orientation and strength. The decoherence strongly correlates with the Zeeman energy splittings described by the ground- and excited-state g factor variations for all inequivalent Er3+ sites, with the observed decoherence times arising from the combined effects of the magnetic dipole-dipole coupling strength and the ground- and excited-state spin-flip rates, along with the natural lifetime of the upper level. The decoherence time was maximized along a preferred magnetic field orientation that minimized the effects of spectral diffusion and that enabled the measurement of an exceptionally narrow optical resonance in a solid—demonstrating a homogeneous linewidth as narrow as 73 Hz.
Abstract : Optical materials for spectral hole burning and coherent transient applications were designed and evaluated, emphasizing relevance to devices including high performance memory, signal processing, high speed holographic recording and analysis, and optical switches, routers, and buffers. The ultimate limits on material performance set by atomic mechanisms were determined. The developed materials contained Eu3+, Pr3+, Tm3+, Tb3+, or Er3+ active ions in various oxide hosts. The first report was made of an Er3+ material for hole burning applications in 1.5 micron optical communications bands. Eight Er3+ materials for applications at 1.5 microns in optical routers and buffer memories were designed and characterized. A correlator' signal processing capability was demonstrated, and the first report was made of operation of a 1.5 micron packet header decoder for all-optimized optical packet switching in optical communications along optical fibers at 1531 nm. Eu3+:Y2SiO5 was optimized for use in 100 GByte ODRAM optical memory devices, considering Eu3+ concentration and temperature. Eight Tm3+ compounds for signal processing applications, such as true time delays for phased-array radar, at diode laser wavelengths near 795 nm were designed and characterized. Eight Tb3+ compounds for photon gated spectral hole burning were designed and characterized, and gated hole burning was observed in Tb3+:YAIO3.