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IEICE Transactions on Electronics

Measurement System for Switching Current Distribution in Intrinsic Josephson Junctions

Hiromi Kashiwaya, T. MATSUMOTO, Hajime Shibata, K. TANI, Satoshi Kashiwaya

Published Mar 1, 2007• 4 citations
Publisher

Abstract

A measurement system is developed to observe the switching current distribution in Bi 2 Sr 2 CaCu 2 O 8+δ intrinsic Josephson junctions (IJJ's). We have designed the frequency responses of filters and cables to achieve the compatibility of sufficient isolation at high frequency region and accurate detection of the distribution at low frequency region. The temperature dependence of the switching current distributions measured on a IJJ by the present system agrees well with the theoretical calculation in the temperature range from 70 mK to 5 K. The consistency of the crossover temperature between experimental result and calculation suggests that the designed measurement system succeeded in observing the macroscopic quantum tunneling process.

DOI
10.1093/ietele/e90-c.3.605

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A measurement system is developed to observe the switching current distribution in Bi 2 Sr 2 CaCu 2 O 8+δ intrinsic Josephson junctions (IJJ's). We have designed the frequency responses of filters and cables to achieve the compatibility of sufficient isolation at high frequency region and accurate detection of the distribution at low frequency region. The temperature dependence of the switching current distributions measured on a IJJ by the present system agrees well with the theoretical calculation in the temperature range from 70 mK to 5 K. The consistency of the crossover temperature between experimental result and calculation suggests that the designed measurement system succeeded in observing the macroscopic quantum tunneling process.
We investigated macroscopic quantum tunneling (MQT) of Bi2Sr2CaCu2Oy{\text{Bi}}_{2}{\text{Sr}}_{2}{\text{CaCu}}_{2}{\text{O}}_{y}Bi2​Sr2​CaCu2​Oy​ intrinsic Josephson junctions (IJJs) for two device structures. One is a small mesa, which is a few nanometers thick with only two or three IJJs, and the other is a stack of a few hundred IJJs in a narrow bridge structure. The experimental results regarding the switching-current distribution for the first switch from the zero-voltage state were in good agreement with the conventional theory for a single Josephson junction, indicating that the crossover temperature from thermal activation to the MQT regime for the former device structure was similar to that for the latter device structure. Together with the observation of multiphoton transitions between quantized energy levels in the MQT regime, these results strongly suggest that the observed MQT behavior is intrinsic to a single IJJ in high-Tc{T}_{c}Tc​ cuprates and is independent of the device structure. The switching-current distribution for the second switch from the first resistive state, which was carefully distinguished from the first switch, was also compared with respect to the two device structures. In spite of the differences between the heat transfer environments, the second switch exhibited a similar temperature-independent behavior for both devices up to a much higher temperature than the crossover temperature for the first switch. We argue that this cannot be explained in terms of self-heating caused by dissipative currents after the first switch. As possible candidates for this phenomenon, the MQT process for the second switch and the effective increase in the electronic temperature due to the quasiparticle injection are discussed.
We report an experimental observation of the macroscopic quantum tunnelling (MQT) in a d-wave high-temperature superconductor (HTSC) Bi2Sr2CaCu2O8+δ intrinsic Josephson junction (IJJs). It is well known that the current-biased Josephson tunnel junction provides an ideal stage for studying a variety of macroscopic quantum phenomena such as MQT. They have been studied and observed in low-temperature superconductor (LTSC) Josephson junctions since the early 1980s and have been established well by now. On the other hand, in the case of HTSC the d-wave pairing symmetry allows for dissipative quasiparticle excitations within the superconducting energy gap, which is expected to severely interfere with an observation of MQT. Contrary to this naive conception, our experimental results have explained that the effects of the nodal quasiparticles are not strong enough to obscure the observation of the MQT. Furthermore, we found that the MQT in IJJs was observed at approximately 1 K, which was ten times higher than that of LTSC Josephson junctions. This higher classical-to-quantum crossover temperature is due to their high plasma frequency. We also discuss the resonant activation of IJJs in the presence of microwave radiation.
A nanometer-thick small mesa consiting of only two or three Bi 2 Sr 2 CaCu 2 O y intrinsic Josephson junctions (IJJs) is studied through the switching current distribution measurements down to 0.4 K. Experimental results clearly show that the first switching events from the zero-voltage state for 1 K < T < 4 K are successfully described by a conventional thermal activation (TA) theory for a single Josephson junction, and that they become independent of temperature below T* ∼ 0.7 K. We observe the microwave-induced peak in the switching distribution at 0.4 K, which is induced by the microwave irradiation at 55 GHz. These results strongly suggest that the system crossovers to macroscopic quantum tunneling (MQT) regime below T* , which is as high as the previously reported value for a stacked IJJs with several tens of junctions, in contrast to the recent result on a similar mesa-structured surface IJJ.
We have developed a scheme for high resolution measurements of the switching current distribution of a current-biased Josephson tunnel junction using a timing technique. In the measurement setup digital control and read-out electronics are galvanically isolated from the analog sample bias electronics by an optical fiber link. We have successfully used this technique to investigate thermal activation and macroscopic quantum tunneling of the phase in a high-quality 5×5 μm2 Nb–Al/AlOx–Nb Josephson tunnel junction with a critical current of Ic≈325 μA. At temperatures above the cross over temperature of T★≈280 mK the escape is dominated by thermal activation. Due to the high quality factor of the junction (Q≈95), the escape temperature is noticeably affected by the thermal prefactor. At temperatures below T★, the value of which agrees well with the theoretical predictions, the escape of the phase by quantum mechanical tunneling is observed. The presented technique can be employed to characterize current-biased Josephson tunnel junctions for applications in quantum information processing.
Measurements of macroscopic quantum tunnelling (MQT) in intrinsic Josephson junctions (IJJs) suggest that they may be suitable as qubits. An advantage of using IJJs over trilayers is the absence of any artificial barrier and hence the possible absence of decohering two-level fluctuators. A disadvantage is that it is difficult to fabricate single IJJs. Hence all IJJ MQT experiments have been carried out on arrays of many IJJs in series. Since MQT is suppressed by dissipation, it is important (a) to understand the role of dissipation on the dynamics of IJJs and (b) to consider how the dissipation and the dynamics change as a function of the number of junctions in the array which are in the voltage state. We have measured distributions of the nth-order switching current in TlBaCaCuO IJJ arrays, where n indicates switching from n to n+1 junctions being in the voltage state. The junctions show conventional underdamped behaviour at temperatures below some temperature T*, with a suppression of the width of the distribution above T*. We find that T* depends upon n. For n = 0 (i.e. switching from the supercurrent branch), T* is less than 4.2 K. For n > 0, we measured T* values between 20 K and 40 K. Calculations and simulations show that a change in T* results from a change in Q. Analysis suggests that the Q of the IJJs is determined by the environmental impedance when all junctions in the array are in the zero-voltage state, whereas having one junction or more in the voltage state isolates the array from the environment leading to a higher Q. We discuss our data in the context of possible qubit applications.
We study the dynamics of multi-junction switching (MJS): several intrinsic Josephson junctions (IJJs) in an array switch to the finite voltage state simultaneously. The number of multi-switching junctions ( N ) was successfully tuned by changing the load resistance serially connected to an Bi 2 Sr 1.6 La 0.4 CuO 6+δ IJJ array. The independence of the escape rates of N in the macroscopic quantum tunneling regime indicates that MJS is a successive switching process rather than a collective process. The origin of MJS is explained by the gradient of a load curve and the relative magnitudes of the switching currents of quasiparticle branches in the current–voltage plane.