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Journal of Physics B Atomic Molecular and Optical Physics

Enhancement of carrier-envelope phase effects in photoexcitation of alkali atoms

Fatima Anis, Brett D. Esry

Published Sep 21, 2009• 2 citations
Publisher

Abstract

We have conducted a detailed theoretical study of alkali atoms in ultrashort laser pulses to see carrier-envelope phase effects for photoexcitation. This effect has been noted previously by Nakajima and Watanabe (2006 Phys. Rev. Lett. 96 213001) for Cs atoms. The present study, however, includes results from Li, Na, K and Rb as well as from Cs for a range of intensities in an effort to identify a larger effect and thus enhance its chances to be seen experimentally.

DOI
10.1088/0953-4075/42/19/191001

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We have conducted a detailed theoretical study of alkali atoms in ultrashort laser pulses to see carrier-envelope phase effects for photoexcitation. This effect has been noted previously by Nakajima and Watanabe (2006 Phys. Rev. Lett. 96 213001) for Cs atoms. The present study, however, includes results from Li, Na, K and Rb as well as from Cs for a range of intensities in an effort to identify a larger effect and thus enhance its chances to be seen experimentally.
The dynamical process of photoexcitation and photoionization of alkali atoms is studied with three-step laser pulses, focusing on the similarities and differences between Li and Cs atoms on their properties by making a comparison of them. Based on several excitation schemes, the present work not only establishes the rate equations of atom population for all related transition states, but also obtains the analytical solutions of photoexcitation and photoionization process. The mathematical solutions are simplified significantly by restricting the most general case to the several special cases, either designed or selected carefully, in order to highlight the main factors and obtain the physical insight underlying the complicated mathematical expressions. With self-programming, the possible impact of time configuration of laser pulses on the three-step laser excitation process of the photoexcitation and photoionization is calculated and studied systematically. Variation of the ionization efficiency with the laser parameters is investigated and discussed. With the same time configuration of laser pulses, the dependences of atom population for all the related transition states on the two different excitation paths are compared and analyzed, reflecting the impact of changing the atomic parameters. Under the similar excitation conditions, the differences of ionization efficiency between Li and Cs atoms are explored. Finally, based on the present study, several means for optimizing ionization efficiency are proposed.
The development of methods of generation of ultrashort pulses (USP) of femto- and attosecond duration ranges with controlled parameters necessitates the theoretical study of features of their interaction with a matter [1]. Among such features that do not exist in case of “long” pulses should first of all be the nonlinear dependence of the photoprocess probability W on the USP duration (τ) [2] as well as the dependence on the carrier phase with respect to the pulse envelope (φ) [3-4]. It should be noted that if the dependence of the probability W on the phase φ manifests itself either only for very short pulses, when ωτ < 1 (ω is carrier frequency of the pulse), or in case of a nonlinear photoprocess [3], the function W(τ) can differ from a linear function in the limit ωτ> 1 too for fields of moderate strength, when the perturbation theory is applicable [2].
We present a general framework for understanding carrier-envelope phase (CEP) effects in a quantum system interacting with an intense, short laser pulse. We establish a simple connection between the CEP and the wave function that can be exploited to obtain the full CEP dependence of an observable given the wave function at a single CEP. Within this framework, all CEP effects are interpreted as interference between different photon amplitudes which, in turn, can be used to put limits on the pulse lengths and intensities required to see significant CEP effects.
Recently, a dependence of Rabi flopping on the carrier-envelope phase of the exciting laser pulses was predicted theoretically [Phys. Rev. Lett. 89, 127401 (2002)] for excitation of a thin semiconductor film with intense few-cycle pulses. Here, we report corresponding experiments on 50-100-nm thin GaAs films excited with 5-fs pulses. We find a dependence on the carrier-envelope phase arising from the interference of sidebands from the fundamental or the third-harmonic Mollow triplet, respectively, with surface second-harmonic generation.