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Buried-Heterostructure L3 Nanocavity All-Optical Memory with 2.3-nW Power Consumption

Eiichi Kuramochi, Kengo Nozaki, Akihiko Shinya, Hideaki Taniyama, Koji Takeda, Tomonari Sato, Shinji Matsuo, Masaya Notomi

Published Jan 1, 2014• 0 citations
Publisher

Abstract

A tuned L3 design with an enhanced Q factor and a small mode volume enabled 2.3-nW bias power for a buried-heterostructure InGaAsP/InP nanocavity optical memory that was 1/10 of the previous record (30 nW).
DOI
10.1364/cleo_si.2014.sm4m.1

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