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International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

Inter-sublevel dephasing in quantum dots

Martin Teich, Harald Schneider, Jayeeta Bhattacharyya, Stephan F. Winnerl, Luke R. Wilson, M. Helm

Published Sep 1, 2013• 0 citations
Publisher

Abstract

We use the Dresden Free-Electron-Laser (FELBE) to investigate intersublevel coherence times in semiconductor quantum dots (QDs) by degenerate four-wave mixing (DFWM) spectroscopy. We know from pump-probe measurements1on a series of quantum dot samples with varying intersublevel energy that intersublevel relaxation times of the s-p intersublevel transition can become very long (up to 1.5 ns). Due to the discrete nature of these sublevels, intersublevel coherence times should exhibit similar time constants at low temperatures where “pure dephasing” is suppressed.

DOI
10.1109/irmmw-thz.2013.6665455

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We use the Dresden Free-Electron-Laser (FELBE) to investigate intersublevel coherence times in semiconductor quantum dots (QDs) by degenerate four-wave mixing (DFWM) spectroscopy. We know from pump-probe measurements1on a series of quantum dot samples with varying intersublevel energy that intersublevel relaxation times of the s-p intersublevel transition can become very long (up to 1.5 ns). Due to the discrete nature of these sublevels, intersublevel coherence times should exhibit similar time constants at low temperatures where “pure dephasing” is suppressed.
We have performed time-integrated degenerate four-wave mixing experiments in InAs/GaAs self-assembled quantum dots. The quantum dots are excited in resonance with an intersublevel transition between the valence states of the dots. The dephasing time T2{T}_{2}T2​ is deduced from the time dependence of the photon echo amplitude as a function of the delay between the two incident pulses. At low temperature, a dephasing time T2{T}_{2}T2​ of 15 ps is measured for a resonant excitation at 7.4 \ensuremath{\mu}m wavelength. This dephasing corresponds to an homogeneous broadening of the intersublevel transition of 87 \ensuremath{\mu}eV. The polarization decay time is much longer than the one observed for resonant intersubband excitations in quantum wells. The dephasing time of the intersublevel polarization exhibits only a weak temperature dependence, indicating that the dephasing is not dominated by phonon-assisted scattering mechanisms.
We measured dephasing times in InGaAlAs self-assembled quantum dots at low temperature using degenerate four-wave mixing. At 0 K, the coherence time of the quantum dots is lifetime limited, whereas at finite temperatures pure dephasing by exciton-phonon interactions governs the quantum dot coherence. The inferred homogeneous line widths are significantly smaller than the line widths usually observed in the photoluminescence from single quantum dots indicating an additional inhomogeneous broadening mechanism in the latter.
Summary form only given. The dephasing time T/sub 2/ of an exciton in the weak confinement regime in semiconductor quantum dots (QDs) is expected to be quite long, or equivalently, the electronic structure should be composed of discrete ultranarrow or atomic-like levels. These characteristics are very attractive for potential application of QDs to devices. In view of no observation of such a long T/sub 2/ value, we directly measured T/sub 2/ of confined excitons in CuCl QDs by using both a degenerate fourwave-mixing (FWM) and a heterodyne photon echo (HPE) experiment, using very weak pumping power.
We report measurements of ultralong coherence in self-assembled quantum dots. Transient four-wave mixing experiments at 5 K show an average dephasing time of 372 ps, corresponding to a homogeneous linewidth of 3.5 microeV, which is significantly smaller than the linewidth observed in single-dot luminescence. Time-resolved luminescence measurements show a lifetime of the dot ground state of 800 ps, demonstrating the presence of pure dephasing at finite temperature. The homogeneous width is lifetime limited only at temperatures approaching 0 K.