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Journal of Luminescence

The dynamics of hole burning in 4fn–4fn−15d1 transition of Eu2+ in MgS

Levent Biyikli, Z. Hasan

Published Nov 1, 1999• 3 citations
Publisher
DOI
10.1016/s0022-2313(99)00128-3

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Previously we have reported the largest number of photon- gated spectral holes ever burned in a solid. This has interest in their applications in optical storage. However, multiple holeburning in MgS:Eu resulted in noticeable erasure of the previously burned holes. This was attributed to the mechanism of holeburning in this material where both Eu2+ and Eu3+ are stable ions. In gated holeburning, Eu2+ ions are ionized. Eu3+ that form deep traps, capture the electrons generated during the holeburning and are converted to Eu2+. The Zero Phonon Line (ZPL) of these newly formed Eu2+ ions are randomly distributed across the inhomogeneous line causing a partial erasure of the holes burned earlier. This reduces the efficiency of holeburning. Co-doping of MgS:Eu and CaS:Eu with different rare earth (RE) ions has been investigated to provide deep electron traps other than Eu3+. Furthermore, co-doping provides the opportunity to burn holes in multiple ZPLs belonging to different REs, thus increasing the storage density many folds.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Nov 29, 2000•0 citations
The mechanism for highly efficient photoionization spectral hole burning in the 4f7–4f65d1 transition of Eu2+ in MgS host is investigated in detail. The time and power dependencies of the hole depth and its photoerasure are analyzed assuming that a resonant two-photon ionization process initiates the hole burning. The near-room-temperature cycling shifts the hole to low energies, demonstrating the relaxation of an unstable lattice resulting from the hole burning. The characteristics of hole burning change significantly in samples codoped with Ce and Eu. All of these studies support that the mechanism of hole burning is the electron transfer from the Eu2+ ion to the Eu3+ deep trap, both of which are located at the substitutional octahedral sites.
Previously we have reported the largest number of photon- gated spectral holes ever burned in a solid. This has interest in their applications in optical storage. However, multiple holeburning in MgS:Eu resulted in noticeable erasure of the previously burned holes. This was attributed to the mechanism of holeburning in this material where both Eu2+ and Eu3+ are stable ions. In gated holeburning, Eu2+ ions are ionized. Eu3+ that form deep traps, capture the electrons generated during the holeburning and are converted to Eu2+. The Zero Phonon Line (ZPL) of these newly formed Eu2+ ions are randomly distributed across the inhomogeneous line causing a partial erasure of the holes burned earlier. This reduces the efficiency of holeburning. Co-doping of MgS:Eu and CaS:Eu with different rare earth (RE) ions has been investigated to provide deep electron traps other than Eu3+. Furthermore, co-doping provides the opportunity to burn holes in multiple ZPLs belonging to different REs, thus increasing the storage density many folds.