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Optics and Spectroscopy

Optical bistability accompanying temperature variation of zero-phonon-line intensity in a doped crystal

A. P. Saǐko, V. S. Kuz’min

Published Oct 1, 1990• 0 citations
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A theoretical study is made of the threshold conditions for the observation of optical bistability and stimulated emission of zero-phonon lines of crystals containing impurities. A reduction in the electron–photon interaction constant ensures that nonlinear absorption due to a purely electronic transition is attained in a lower saturating field and the lasing threshold rises exponentially as the reciprocal of the Debye–Waller factor. It is shown that there are critical temperatures for the appearance of these effects. Experimental studies of the threshold conditions for lasing and optical bistability make it possible to determine directly the Debye–Waller factor at different temperatures of a crystal.

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Optical Bistability in Semiconductors

Stanley Desmond Smith

Springer series in optical sciences/SPringer series in optical sciences•Jan 1, 1981•1 citation
The low temperature spectra of absorption and luminescence of a wide variety of impurity doped organic and inorganic solids comprise very narrow (io 1O cm1) and intense zero-phonon lines (zPL). They arise from the purely electronic transistions in the impurities i.e. from the changes of the electronic state not accompanied by creation or annihilation of the phonons of the host solid. (ZPL may be called the optical analog of the M5sbauer line), Because of their narrowness ZPL's are very sensitive to even very slight differences in the crystal fields at the 1oca tions of impurities and the ZPL spectruim of a body of impu.rities displays a large inhomogeneous broadening (formula available on paper).
A theoretical study is made of the threshold conditions for the observation of optical bistability and stimulated emission of zero-phonon lines of crystals containing impurities. A reduction in the electron–photon interaction constant ensures that nonlinear absorption due to a purely electronic transition is attained in a lower saturating field and the lasing threshold rises exponentially as the reciprocal of the Debye–Waller factor. It is shown that there are critical temperatures for the appearance of these effects. Experimental studies of the threshold conditions for lasing and optical bistability make it possible to determine directly the Debye–Waller factor at different temperatures of a crystal.