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Applied Physics Letters

Observation of dressed-exciton oscillating emission over a wide wavelength range in a semiconductor microcavity

Hui W. Cao, Joseph M. Jacobson, Gunnar G. Bjork, Stanley Pau, Y. Yamamoto

Published Feb 27, 1995• 51 citations
Publisher

Abstract

We have observed the dressed-exciton oscillating emission in the time domain and the associated spectral splitting in the frequency domain from a GaAs single quantum well microcavity over a very broad range of cavity resonant wavelengths. The spectral splitting and temporal oscillation period have been measured to be nearly constant over two orders of magnitude variation of pump intensity, which confirms the linear bosonic feature of Wannier excitons in the weak excitation regime.

DOI
10.1063/1.113827

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We have observed the dressed-exciton oscillating emission in the time domain and the associated spectral splitting in the frequency domain from a GaAs single quantum well microcavity over a very broad range of cavity resonant wavelengths. The spectral splitting and temporal oscillation period have been measured to be nearly constant over two orders of magnitude variation of pump intensity, which confirms the linear bosonic feature of Wannier excitons in the weak excitation regime.
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We have used femtosecond optical spectroscopy to observe directly the vacuum Rabi oscillations associated with the coupled exciton-photon mode splitting in a semiconductor quantum microcavity. When the microcavity is impulsively excited by a coherent short optical pulse, the time-resolved emission from the cavity shows beats corresponding to the oscillation between cavity and exciton modes, with a decay corresponding to approximately twice the cavity lifetime. Interferometric pump-probe measurements clearly show the coherent evolution of the cavity polarization.
Recent progress in vertical surface-emitting-laser-diode technology has raised considerable interest in cavity-QED effects in high-quality vertical semiconductor microcavities. When an excitonic transition and a single cavity mode are strongly coupled, the normal modes of the system are coupled modes split by the vacuum-Rabi frequency, corresponding in the time domain to an oscillation of the excitation between modes of exciton and photon character. Recently, the vacuum-Rabi splitting and preliminary observations of time-domain oscillation in semiconductor quantum microcavities have been reported.1,2 In this paper we investigate rigorously the time-domain vacuum-Rabi oscillation by femtosecond upconversion and pump-probe techniques.
Semiconductor quantum microcavities are interesting physical systems in which fundamental interactions between light and excitons can be explored. For example, in the weak - coupling limit, modified excitonic spontaneous emission can be observed. In the strong-coupling limit, the cavity field modes and the quantum well exciton modes become coupled; the normal modes of the system are "cavity-polaritons" [1,2]. For in-plane wavevectors k// near zero, the normal modes are split by the dipole coupling between the excitons and the cavity vacuum field. This splitting is often referred to as a vacuum-Rabi splitting (VRS), as it has the same physical origin as the VRS observed in the interactions of atoms with single-mode cavities. The physical system in this work consists of a λ planar microcavity formed by two distributed-Bragg reflectors, with five GaAs quantum wells situated in the center of the cavity. In all the experiments described here, the exciton and cavity modes are on resonance (the low-field VRS is 6 meV for this sample).
Recently, cavity quantum electrodynamic (QED) effects in semiconductor microcavities have been of considerable interest since, in the weak-coupling regime they play an important role in selectively increasing spontaneous emission into the lasing mode of vertical-cavity surface-emitting lasers (VCSEL’s) [1,2], enabling low-threshold, high speed, and high efficiency. In a strong-coupling regime, the normal modes of the coupled system are superpositions of the exciton and cavity modes. Hence the impulsively excited system will evolve in time with the energy oscillating between the exciton and cavity modes. This is known as a vacuum-Rabi oscillation (VRO), with a frequency of Ω=d¯⋅E¯/@@h, where d¯ is the transition dipole moment of atoms and E¯ the vacuum-field strength. Of course, VRO are observable only when the cavity lifetime and exciton dephasing time are long enough compared to VRO period. Recently, Weisbuch et al. [3] have reported an observation of the normal-mode vacuum Rabi splitting in 2-D-exciton/planar-DBR microcavities. The observed splittings were as large as 6 meV in reflection and transmission spectra, implying 690-fs vacuum Rabi oscillations.
The spectral response of a monolithic semiconductor quantum microcavity with quantum wells as the active medium displays mode splitting when the quantum wells and the optical cavity are in resonance. This effect can be seen as the Rabi vacuum-field splitting of the quantum-well excitons, or more classically as the normal-mode splitting of coupled oscillators, the excitons, and the electromagnetic field of the microcavity. An exciton oscillator strength of 4\ifmmode\times\else\texttimes\fi{}1012{10}^{12}1012 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}2}$ is deduced for 76-\AA{} quantum wells.