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Japanese Journal of Applied Physics

Magnetic Properties of Optical Quantum Transition Line Shapes and Line Widths of Electron–Piezoelectric Potential Phonon Interacting Materials under Circularly Oscillating Fields

Joung Young Sug, Su Ho Lee, Jun Yong Choi, Geon Sa-Gong, Jong Jae Kim

Published Sep 1, 2008• 11 citations
Publisher

Abstract

Magnetic Properties of Optical Quantum Transition Line Shapes and Line Widths of Electron–Piezoelectric Potential Phonon Interacting Materials under Circularly Oscillating Fields, Sug, Joung Young, Lee, Su Ho, Choi, Jun Yong, Sa-Gong, Geon, Kim, Jong Jae
DOI
10.1143/jjap.47.7757

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Stoichiometric materials of Eu(III) offer a promising platform for quantum memories attributable to their unique capability to display a distinctive, nondegenerate 5 D 0 → 7 F 0 transition, which enables precise mapping of optical quantum states into their energy-level manifold─a prerequisite for reliable storage and retrieval on demand. However, placing Eu(III) into chiral polar structures, which are necessary for achieving narrow spectral line widths and long optical lifetimes, is a daunting task. Here, we discover Eu 2 (SeO 3 ) 2 (SO 4 )(H 2 O) 2, a rare Eu(III) material that exhibits chiral polar symmetries encompassing both local and global structures. This unique structure is shaped by an appropriate combination of asymmetric ligands. Chirality fosters dipole–dipole interactions and J -mixing, as evidenced by second-harmonic generation, photoluminescence, and magnetic susceptibility. The broken inversion symmetry is supported by the phase-matching behavior in second-harmonic generation. The 5 D 0 → 7 F 0 transition is observed at 578 nm (2.145 eV) with 7.42 meV line width and 3.39 μs lifetime at T = 78 K. The analysis of magnetic susceptibility data using Van Vleck’s theory results in an effective magnetic moment of ρ eff = 3.33 μ B /Eu 3+ and J -mixing. Heat capacity data reveal underlying phonon dynamics in the material. This study demonstrates a pathway to realizing new chiral stoichiometric Eu 3+ compounds with potential for optically addressable quantum memory applications.
Abstract The degree of Zeeman splitting of ground-state sublevels in the presence of a magnetic field can be measured using atomic sensors. The coherence of the spins in the ensemble affects the efficiency of an atomic magnetometer. The sensitivity of these sensors depends on the line width of the magnetic resonance curve, which is related to the coherence lifetime of the atomic spins. Atomic polarization influences the optical properties of the medium, making it anisotropic. The relatively long lifetime of ground-state polarization is a useful tool for measuring the energy-level splitting. The modification associated with the atomic coherence in the presence of an external magnetic field leads to interesting absorption effects in the atomic environment. The splitting of magnetic sublevels and the transition between them under the application of a magnetic field are quantum mechanical images of the interaction between a field and an atomic spin that must be analyzed using a density matrix. In the present work, magneto-optical effects with circularly polarized light such as the dynamic properties and evolution of sublevels of the rubidium-87 D1 line and the absorption properties of the atomic polarized environment are studied theoretically using the reduced density matrix approach.
The work presents the results of optical studies of Xe-related defect in diamond. This defect is one of a few having narrow zero-phonon line in the near-infrared part of the photo-luminescence spectra. It appears in diamond after Xe+ ion implantation followed by thermal annealing. Given unique physical properties of diamond (hardness, optical transparency in wide spectral range, chemical inertness, high thermal conductivity, low thermal expansion coefficient) and stability of Xe-related center it can be viewed as an potential candidate for the source of single-photons, or as optically manipulated qubit, not unlike nitrogen-vacancy center. However, compared to the latter Xe-related center is not as well understood and it is necessary to gain thorough understanding of its spatial structure, symmetry, electronic states and mechanisms of interaction with the host diamond lattice. This thesis addresses several questions, in regard to Xe-related center: 1) How efficiently this center is formed in the implantation/annealing process; 2) How does it interact with the host lattice to produce both homogeneous and inhomogeneous shape of the 811.7 nm zero-phonon line; and 3) What is the type and nature of transitions responsible for the 811.7 nm zero-phonon line. In answering the first question two methods for measuring the conversion efficiency of any kind of optically active defect have been developed and applied to Xe-related center in diamond. The study of line-broadening mechanisms showed how this center interacts with the strain produced by other neighboring Xe-centers, distributed in a plane-like geometry. Also, interaction with vibrational motions of the diamond lattice localized in the vicinity of the Xe-centers is analyzed and the parameters of this pseudo-local mode are found. Finally, using the effects of optical saturation in photo-luminescence under excitation with Gaussian laser beams it has been shown that 811.7 nm zero-phonon line is due to absorption and emission by circular magnetic dipole. Also, the site symmetry of Xe-related center has been confirmed as trigonal with the threefold axis oriented alongdirection in the diamond crystal.