Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

IEEE Region 10 Conference (TENCON)

Analysis of pulsed laser diode driver system for multistate quantum key distribution

Muhammad Syargawi Abdullah, M. Z. Jamaludin, Gunawan Witjaksono, Mohd Hadri Hafiz Mokhtar

Published Nov 1, 2010• 0 citations
Publisher

Abstract

In this paper, we analyse a pulsed laser diode driver system based on MOSFET current mirror and digital signal controller (DSC) designed to emit stream pairs of photons from three semiconductor laser diodes. The DSC is capable to switch between the three laser diodes at constant rate. The duty cycle is maintained at below than 10% while the pulse width of the modulation current is set at around 30ns in order to minimize its thermal effect and thus prolong the laser diodes life cycle. The MOSFET current mirror circuits are capable of delivering constant modulation current to the laser diodes with its peak is up to 58mA resulting a peak optical power output around 7dBm.

DOI
10.1109/tencon.2010.5686155

Related papers

Biphoton generation using multistate quantum key distribution technique

Muhammad Syargawi Abdullah, M. Z. Jamaludin, Gunawan Witjaksono +1 more

In this paper, we present a method to prepare pairs of photons (biphotons) for multistate quantum key distribution by investigating a pulsed laser diode driver system based on MOSFET current mirror and digital signal controller (DSC). The design is able to emit stream pairs of photons from three semiconductor laser diodes. The DSC is capable to switch between the three laser diodes at constant rate. The duty cycle is maintained at 1% in order to reduce its thermal effect and thus prolong the laser diodes life cycle. This laser driver system is capable to generate biphotons automatically with bit rate of about 5.5kbps for μ equal to 1.

IEEE Student Conference on Research and Development (SCOReD)•Dec 1, 2010•0 citations

A Laser Modulation Driver in 130-nm CMOS Technology for Quantum Key Distribution System

Bo Feng, Futian Liang, Xinzhe Wang +3 more

Laser modulation is a process to modulate the photons to different states in quantum key distribution (QKD) system. A laser modulation driver, which is a pre-driver for the laser modulator, is presented in this paper. The laser modulation driver is implemented in a 130-nm complementary metal oxide semiconductor (CMOS) process. The laser modulation driver can provide a current pulse signal with an adjustable amplitude and an adjustable pulse-width to a distributed power amplifier. The pulse-width of the current signal can be adjusted from 300 ps to 3800 ps, the maximum adjustable amplitude is 14.4 mA, and the data rate can reach 625 Mb/s. According to the test results, the laser modulation driver can meet the requirements of the electro-optic modulator (EOM) in QKD system, and it can be used in the laser modulation circuit in QKD experiments.

International Conference on Integrated Circuits and Microsystems (ICICM)•Oct 1, 2019•1 citation

An adjustable amplitude and pulse-width laser modulation driver with active feedback for QKD experiments

Chenxi Zhu, Futian Liang, Bo Feng +3 more

This paper presents a laser modulation driver using active feedback in a 130-nm CMOS process. The driver is designed for laser modulator in quantum key distribution (QKD) experiments. The laser modulator requires a drive signal with adjustable amplitude and pulse-width. We employ a delay-adjustable delay chain and a multi-stage amplifier with active feedback to provide a current pulse signal with an adjustable pulse-width from 110 ps to 3.3 ns and an amplitude adjustment range of 0 mA to 14.4 mA to drive the laser modulation. By employing the active feedback, the rising/falling edge of the output current in the proposed circuit can reach 70 ps, while the data rate is up to 625 Mb/s. The post layout simulation results indicate that the modulation driver can meet the requirements of the QKD experiments.

IEEE International Conference on ASIC (ASICON)•Oct 1, 2019•2 citations

A laser source driver with adjustable amplitude and pulse-width in 130-nm CMOS technology for quantum key distribution experiments

Bo Feng, Futian Liang, Xinzhe Wang +3 more

We present a laser source driver using a 130-nm complementary metal oxide semiconductor technology, named quantum laser source driver 2018 (QLSD2018). QLSD2018 drives the optical source with a current pulse signal, and the output of QLSD2018 has an adjustable pulse-width from 300 ps to 3.8 ns and an adjustable amplitude up to 70 mA. The data rate is up to 625 Mb/s, and the extinction ratio of the optical source (the 1550-nm distributed feedback laser or the 850-nm vertical-cavity surface-emitting laser) driven by QLSD2018 can reach 26 dB. The test results indicate that QLSD2018 can be used in quantum key distribution experiments. Using QLSD2018 on the transmitter side can significantly simplify the peripheral circuit of the optical source.

Review of Scientific Instruments•Jun 1, 2019•8 citations

A High-precision Laser Diode Driver for MDI-QKD System

Zongwu He, Sicheng Huang, Bowen Zheng +2 more

Measurement-device-independent quantum key distribution (MDI-QKD) System is based on the decoy state method and a time reversed Einstein-Podolsky-Rosen (EPR) protocol. Stringent requirements for the central wavelength, line width and optical power of the laser source are required in MDI-QKD. In order to satisfy above requirements, this work proposes a high-precision laser diode (LD) driver, which consists of a temperature control module and an optical power control module, moreover, the outgoing laser needs to be injection locked first. Through laboratory tests, the wavelength jitter of the laser is 0.37pm, the −3dB spectrum width is 0.0170nm and the optical power fluctuation reaches 0.01dB. The results indicate that the designed LD driver meets the requirements of MDI-QKD.

IEEE Joint International Information Technology and Artificial Intelligence Conference (ITAIC)•Jun 17, 2022•0 citations

A laser source driver in 0.18 μ m SiGe BiCMOS technology for high speed quantum key distribution

Yulong Zhu, Xinzhe Wang, Chenxi Zhu +8 more

Quantum key distribution (QKD) has rapidly developed recently. The repetition frequency of the QKD system increases from tens or hundreds of MHz to GHz. A laser diode (LD) operating in gain-switched mode is widely used as a weak coherent light source in a QKD system. We present an LD driver circuit fabricated in 0.18 μm SiGe heterojunction bipolar transistor bipolar complementary metal oxide semiconductor technology. The circuit can operate at frequencies up to 2.5 GHz, satisfying the requirements of high-speed laser drives in practical QKD systems. The output current of the driver circuit can reach 100 mA when driving an LD whose input equivalent resistance is ∼21 Ω. The extinction ratio of the 1550-nm distributed feedback LD light source driven by our driver circuit reaches 23 dB at the operating frequency of 2.5 GHz, meeting the requirements of QKD systems. This circuit will be used in miniaturized QKD systems.

AIP Advances•Dec 1, 2022•7 citations
In this paper, we analyse a pulsed laser diode driver system based on MOSFET current mirror and digital signal controller (DSC) designed to emit stream pairs of photons from three semiconductor laser diodes. The DSC is capable to switch between the three laser diodes at constant rate. The duty cycle is maintained at below than 10% while the pulse width of the modulation current is set at around 30ns in order to minimize its thermal effect and thus prolong the laser diodes life cycle. The MOSFET current mirror circuits are capable of delivering constant modulation current to the laser diodes with its peak is up to 58mA resulting a peak optical power output around 7dBm.
In this paper, we present a method to prepare pairs of photons (biphotons) for multistate quantum key distribution by investigating a pulsed laser diode driver system based on MOSFET current mirror and digital signal controller (DSC). The design is able to emit stream pairs of photons from three semiconductor laser diodes. The DSC is capable to switch between the three laser diodes at constant rate. The duty cycle is maintained at 1% in order to reduce its thermal effect and thus prolong the laser diodes life cycle. This laser driver system is capable to generate biphotons automatically with bit rate of about 5.5kbps for μ equal to 1.
Laser modulation is a process to modulate the photons to different states in quantum key distribution (QKD) system. A laser modulation driver, which is a pre-driver for the laser modulator, is presented in this paper. The laser modulation driver is implemented in a 130-nm complementary metal oxide semiconductor (CMOS) process. The laser modulation driver can provide a current pulse signal with an adjustable amplitude and an adjustable pulse-width to a distributed power amplifier. The pulse-width of the current signal can be adjusted from 300 ps to 3800 ps, the maximum adjustable amplitude is 14.4 mA, and the data rate can reach 625 Mb/s. According to the test results, the laser modulation driver can meet the requirements of the electro-optic modulator (EOM) in QKD system, and it can be used in the laser modulation circuit in QKD experiments.
This paper presents a laser modulation driver using active feedback in a 130-nm CMOS process. The driver is designed for laser modulator in quantum key distribution (QKD) experiments. The laser modulator requires a drive signal with adjustable amplitude and pulse-width. We employ a delay-adjustable delay chain and a multi-stage amplifier with active feedback to provide a current pulse signal with an adjustable pulse-width from 110 ps to 3.3 ns and an amplitude adjustment range of 0 mA to 14.4 mA to drive the laser modulation. By employing the active feedback, the rising/falling edge of the output current in the proposed circuit can reach 70 ps, while the data rate is up to 625 Mb/s. The post layout simulation results indicate that the modulation driver can meet the requirements of the QKD experiments.
We present a laser source driver using a 130-nm complementary metal oxide semiconductor technology, named quantum laser source driver 2018 (QLSD2018). QLSD2018 drives the optical source with a current pulse signal, and the output of QLSD2018 has an adjustable pulse-width from 300 ps to 3.8 ns and an adjustable amplitude up to 70 mA. The data rate is up to 625 Mb/s, and the extinction ratio of the optical source (the 1550-nm distributed feedback laser or the 850-nm vertical-cavity surface-emitting laser) driven by QLSD2018 can reach 26 dB. The test results indicate that QLSD2018 can be used in quantum key distribution experiments. Using QLSD2018 on the transmitter side can significantly simplify the peripheral circuit of the optical source.
Measurement-device-independent quantum key distribution (MDI-QKD) System is based on the decoy state method and a time reversed Einstein-Podolsky-Rosen (EPR) protocol. Stringent requirements for the central wavelength, line width and optical power of the laser source are required in MDI-QKD. In order to satisfy above requirements, this work proposes a high-precision laser diode (LD) driver, which consists of a temperature control module and an optical power control module, moreover, the outgoing laser needs to be injection locked first. Through laboratory tests, the wavelength jitter of the laser is 0.37pm, the −3dB spectrum width is 0.0170nm and the optical power fluctuation reaches 0.01dB. The results indicate that the designed LD driver meets the requirements of MDI-QKD.
Quantum key distribution (QKD) has rapidly developed recently. The repetition frequency of the QKD system increases from tens or hundreds of MHz to GHz. A laser diode (LD) operating in gain-switched mode is widely used as a weak coherent light source in a QKD system. We present an LD driver circuit fabricated in 0.18 μm SiGe heterojunction bipolar transistor bipolar complementary metal oxide semiconductor technology. The circuit can operate at frequencies up to 2.5 GHz, satisfying the requirements of high-speed laser drives in practical QKD systems. The output current of the driver circuit can reach 100 mA when driving an LD whose input equivalent resistance is ∼21 Ω. The extinction ratio of the 1550-nm distributed feedback LD light source driven by our driver circuit reaches 23 dB at the operating frequency of 2.5 GHz, meeting the requirements of QKD systems. This circuit will be used in miniaturized QKD systems.