Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Current Opinion in Solid State and Materials Science

Exchange coupling between two electrons in double quantum dot structures

Dmitriy V. Melnikov, Lu Zhang, Jean‐Pierre Leburton

Published Apr 1, 2006• 2 citations
Publisher
DOI
10.1016/j.cossms.2006.11.004

Related papers

Negative exchange interactions in few-electron double quantum dots

Kuangyin Deng, F. A. Calderon-Vargas, Nicholas J. Mayhall +1 more

Bulletin of the American Physical Society•Mar 6, 2018•0 citations

Exchange-Induced Spin Blockade in a Two-Electron Double Quantum Dot

利正 藤澤, T. Fujisawa

•Jan 1, 2015•0 citations

Quantitative estimation of exchange interaction energy using two-electron vertical double quantum dots

哲夫 小寺, Tetsuo Kodera, K. Ono +9 more

•Apr 1, 2009•0 citations

Anisotropic exchange coupling in a nanowire double quantum dot with strong spin-orbit coupling

Rui Li, J. Q. You

A spin-orbit qubit is a hybrid qubit that contains both orbital and spin degrees of freedom of an electron in a quantum dot. Here we study the exchange coupling between two spin-orbit qubits in a nanowire double quantum dot (DQD) with strong spin-orbit coupling (SOC). We find that while the total tunneling in the DQD is irrelevant to the SOC, both the spin-conserved and spin-flipped tunnelings are SOC dependent and can compete with each other in the strong SOC regime. Moreover, the Coulomb repulsion between electrons can combine with the SOC-dependent tunnelings to yield an anisotropic exchange coupling between the two spin-orbit qubits. Also, we give an explicit physical mechanism for this anisotropic exchange coupling.

arXiv:1401.0101•Physical Review B•Jul 10, 2014•17 citations

Simulation of exchange coupling effects in double quantum dot FinFET-like structures

Ilan Bouquet, Alexander Maeder, Mathieu Luisier

By leveraging a GPU-accelerated Schrödinger-Poisson (SP) solver, we characterize exchange coupling in a hole spin double-qubit device involving a double quantum dot (DQD) system formed inside a 5-gate silicon fin field-effect transistor (FinFET) similar to real experimental structures. The self-consistent SP simulations rely on a finite difference discretization of the 3D volume and on a Luttinger-Kohn 6x6 kp Hamiltonian accounting for magnetic fields and strain distribution. They return the gate-induced confined electronic states and the corresponding electrostatic potential hosting the DQD. These quantities serve as inputs to a two-particle Hamiltonian that is constructed from single-particle Slater determinants through the configuration interaction (CI) method. By diagonalizing this two-particle Hamiltonian, the eigenstates and eigenenergies of the DQD system are obtained, together with their exchange coupling. We show that our simulation framework, using a reduced number of basis states, is capable of reproducing the magneto-electrostatic behavior of the devices of interest, as predicted from theory and observed experimentally. We finally leverage our approach to determine the optimal operating conditions of a two-qubit quantum logic gate implemented in a Si FinFET structure.

quant-pharXiv:2607.08447•Jul 10, 2026

MANIPULATION OF EXCHANGE INTERACTION IN A DOUBLE QUANTUM DOT

Michael P. Stopa, Seigo Tarucha, T. Hatano

International Symposium on Mesoscopic Superconductivity and Spintronics (MS+S)•Aug 1, 2005•0 citations
A spin-orbit qubit is a hybrid qubit that contains both orbital and spin degrees of freedom of an electron in a quantum dot. Here we study the exchange coupling between two spin-orbit qubits in a nanowire double quantum dot (DQD) with strong spin-orbit coupling (SOC). We find that while the total tunneling in the DQD is irrelevant to the SOC, both the spin-conserved and spin-flipped tunnelings are SOC dependent and can compete with each other in the strong SOC regime. Moreover, the Coulomb repulsion between electrons can combine with the SOC-dependent tunnelings to yield an anisotropic exchange coupling between the two spin-orbit qubits. Also, we give an explicit physical mechanism for this anisotropic exchange coupling.
By leveraging a GPU-accelerated Schrödinger-Poisson (SP) solver, we characterize exchange coupling in a hole spin double-qubit device involving a double quantum dot (DQD) system formed inside a 5-gate silicon fin field-effect transistor (FinFET) similar to real experimental structures. The self-consistent SP simulations rely on a finite difference discretization of the 3D volume and on a Luttinger-Kohn 6x6 kp Hamiltonian accounting for magnetic fields and strain distribution. They return the gate-induced confined electronic states and the corresponding electrostatic potential hosting the DQD. These quantities serve as inputs to a two-particle Hamiltonian that is constructed from single-particle Slater determinants through the configuration interaction (CI) method. By diagonalizing this two-particle Hamiltonian, the eigenstates and eigenenergies of the DQD system are obtained, together with their exchange coupling. We show that our simulation framework, using a reduced number of basis states, is capable of reproducing the magneto-electrostatic behavior of the devices of interest, as predicted from theory and observed experimentally. We finally leverage our approach to determine the optimal operating conditions of a two-qubit quantum logic gate implemented in a Si FinFET structure.