Optical Engineering
Abnormal anti-Stokes Raman scattering and coherent backscattering as manifestation of Anderson localization of light in nonlinear mesoscopic materials
Ion Smaranda, Lucian Mihut, Mihaela A. Baibarac, Ioan Baltog, S. Lefrant
Abstract
We demonstrate that under continuous single-beam excitation, one can generate an abnormal anti-Stokes Raman emission (AASRE) whose properties are similar to a coherent anti-Stokes Raman scattering. The effect has been observed in mesoscopic materials, which possess intrinsically nonlinear properties [lithium niobate (LiNbO3), bismuth germanium oxide (Bi12GeO20; BGO), bismuth silicon oxide (Bi12GeO20; BSO)], which have a nonzero electric susceptibility of the third order, χ(3)≠0. Corroborated Raman and coherent backscattering studies demonstrate that the occurrence of both effects is conditioned by the existence of a mesoscopic morphology of the sample, which is able to ensure efficient transport of the light inside the sample through a multiple light scattering mechanism. In this context, both AASRE and coherent backscattering effects are because of the Anderson localization of the light.