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Correlated Photon-Pair Generation in the Low-Raman Window of a Chalcogenide Ge11.5As24Se64.5 nanowire

Chunle Xiong, Jie He, Alex S. Clark, Matthew J. Collins, Xin Gai, Duk‐Yong Choi, Steve Madden, Barry Luther‐Davies, Benjamin J. Eggleton

Published Jan 1, 2013• 0 citations
Publisher

Abstract

We experimentally demonstrate a 10 times enhancement to the coincidence-to-accidental ratio of a correlated photon-pair source from a chalcogenide Ge11.5As24Se64.5 nanowire. This improvement is enabled by the low-Raman window of the device.
DOI
10.1364/cleo_qels.2013.qth1e.1

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We investigated correlated photon-pair generation via spontaneous four-wave mixing in an integrated chalcogenide Ge11.5As24Se64.5 photonic nanowire. The coincidence to accidental ratio, a key measurement for the quality of correlated photon-pair sources, was measured to be only 0.4 when the photon pairs were generated at 1.9 THz detuning from the pump frequency due to high spontaneous Raman noise in this regime. However, the existence of a characteristic low-Raman window at around 5.1 THz in this material's Raman spectrum and dispersion engineering of the nanowire allowed us to generate photon pairs with a coincidence to accidental ratio of 4.5, more than 10 times higher than the 1.9 THz case. Through comparing the results with those achieved in chalcogenide As2S3 waveguides which also exhibit a low Raman-window but at a larger detuning of 7.4 THz, we find that the position of the characteristic low-Raman window plays an important role on reducing spontaneous Raman noise because the phonon population is higher at smaller detuning. Therefore the ultimate solution for Raman noise reduction in Ge11.5As24Se64.5 is to generate photon pairs outside the Raman gain band at more than 10 THz detuning.
We demonstrate low Raman-noise correlated photon-pair generation in a dispersion-engineered 10 mm As2S3 chalcogenide waveguide at room temperature. We show a coincidence-to-accidental ratio (CAR) of 16.8, a 250 times increase compared with previously published results in a chalcogenide waveguide, with a corresponding brightness of 3×10(5) pairs·s(-1)·nm(-1) generated at the chip. Dispersion engineering of our waveguide enables photon passbands to be placed in the low spontaneous Raman scattering (SpRS) window at 7.4 THz detuning from the pump. This Letter shows the potential for As2S3 chalcogenide to be used for nonlinear quantum photonic devices.
We theoretically investigate the generation of quantum-correlated photon pairs through spontaneous four-wave mixing in chalcogenide As(2)S(3) waveguides. For reasonable pump power levels, we show that such photonic-chip-based photon-pair sources can exhibit high brightness (approximately 1 x 10(9) pairs/s) and high correlation (approximately 100) if the waveguide length is chosen properly or the waveguide dispersion is engineered. Such a high correlation is possible in the presence of Raman scattering because the Raman profile exhibits a low gain window at a Stokes shift of 7.4 THz, though it is constrained due to multi-pair generation. As the proposed scheme is based on photonic chip technologies, it has the potential to become an integrated platform for the implementation of on-chip quantum technologies.