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Applied Physics Letters

Optically detected microwave-induced impact ionization of ytterbium bound excitons in InP

B. J. Heijmink Liesert, M. Godlewski, Andrzej Stapor, T. Gregorkiewicz, C.A.J. Ammerlaan, J. Weber, M. Moser, F. Scholz

Published May 20, 1991• 23 citations
Publisher

Abstract

Optically detected microwave-induced impact ionization of excitons and shallow donors is studied in Yb-doped InP grown by metalorganic chemical vapor deposition. The experimental results directly confirm that Yb3+ intrashell emission is induced by nonradiative recombination of Yb bound excitons due to an impurity Auger effect. Yb3+ ions in InP are found to bind excitons with the electron being localized first, followed by subsequent hole capture.

DOI
10.1063/1.104937

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Physics Letters A•Jan 19, 2011•11 citations
Optically detected microwave-induced impact ionization of excitons and shallow donors is studied in Yb-doped InP grown by metalorganic chemical vapor deposition. The experimental results directly confirm that Yb3+ intrashell emission is induced by nonradiative recombination of Yb bound excitons due to an impurity Auger effect. Yb3+ ions in InP are found to bind excitons with the electron being localized first, followed by subsequent hole capture.
A new, very efficient excitation mechanism of Yb intrashell 4f-4f emission in ZnS is reported. We show that the energy transfer from donor-acceptor pairs to Yb sites leads to Yb ionization (Yb3+⇒Yb2+), followed by capture of ionized carriers via the Yb3+ external excited state (bound exciton state), an energy transfer to the Yb3+ 4f shell, and Yb3+ 4f-4f radiative recombination. Since three centers (donor, acceptor, and Yb) participate in the energy transfer process in which Yb is first ionized, the above excitation mechanism is of three-center Auger transition nature. A similar excitation mechanism is expected for Eu, Sm, and Tm in ZnS, i.e., for these rare earth (RE) ions which can change their charge state from 3+ to 2+ in this lattice. For wider band-gap sulfides, such as CaS or SrS, this mechanism can be of importance also for other REs, such as, for example, Pr, Dy, and Er.
We report isotope-selective loading and trapping of doubly ionized ytterbium into an rf quadrupole trap. Isotopically pure clouds of 174Yb^{174}\mathrm{Yb}174Yb+{}^{+}+ ions were first loaded into the rf trap via a multistage photoionization process. The Yb2+{}^{2+}2+ ions were then produced by electron impact ionization of the trapped Yb+{}^{+}+ ions. The Yb2+{}^{2+}2+ ions were subsequently detected by rf excitation of their secular motion in the trap, which led to sympathetic heating and changes in the fluorescence of the laser-cooled Yb+{}^{+}+ ions. The presence of doubly charged Yb ions was further verified by the appearance of a dark band in the center of Yb+{}^{+}+ ion cloud after electron impact ionization. We discuss the possible formation of Yb2+{}^{2+}2+H and similar compounds and the schemes for the direct optical detection of the Yb2+{}^{2+}2+ ions.
The photoluminescence spectra of Yb-implanted InP samples were studied under pulsed and cw excitations using an Ar+-ion laser (above band-gap excitation) at different temperatures and excitation intensities. The photoluminescence spectrum of the 4f transitions 2F5/2–2F7/2 consists of a sharp peak at 1001 nm and broader peaks in the spectral range between 1002.5 and 1010 nm. Time-resolved spectra were recorded at different temperatures. Using a tunable Ti:sapphire laser (above and below band-gap excitation) the photoluminescence excitation spectra were investigated for different emission lines. Study of the rise and decay time under intrinsic excitation (band to band) show that the rise time is a function of excitation intensity, which reflects an indirect excitation process for Yb3+. The experimental data are explained using a kinetics model of energy transfer from the host lattice to the localized core excited states of rare-earth isoelectronic structured traps. The numerically simulated luminescence rise and decay times show a good general quantitative agreement with experimental data, over a wide range of generation rates. The photoluminescence spectra and decay time were also studied as a function of temperature. A quenching mechanism of ytterbium luminescence involving Yb and Fe ions is proposed. Finally, the electric-field quenching of InP:Yb photoluminescence is investigated.
Spin of a donor bound electron in silicon has been shown to be a very coherent qubit system but lacks a coherent optical interface. There does, however, exist a donor bound exciton transition that can be excited optically but decays dominantly via an Auger recombination producing an electrical signal. This provides an opto-electrical pathway for spin readout. Scaling this readout to single-spin level will require interfacing the spins with silicon photonics for efficient guiding of photons, which in turn will require moving to silicon-on-insulator (SOI) substrates. Here we demonstrate first ensemble opto-electronic measurements of donor bound excitons in SOI material, including isotopically purified 28-Si device layers. The experiments show pronounced shifts in the resonance wavelengths and broadenings of the transition linewidths compared to the bulk experiments.
The characteristics of impact excitation of the 1.54-μm emission due to intrashell transitions of 4f electrons of erbium atoms (4I13/2 →4 I15/2) doped into InP were investigated in comparison with the photoluminescence (PL) emission of the same peak from the same sample. The thermal quenching of this Er-related electroluminescence (EL) emission was found to be very small in contrast to the large thermal quenching of the PL emission. The EL emission intensity at room temperature was half that at 77 K, and the temperature dependence of the emission energy and the spectral width was very small. Due to almost temperature-independent nature of the impact excitation process, the quenching of the EL emission intensity reflected directly that of the fluorescence efficiency of this intrashell transitions of Er 4f electrons. Using this result, the temperature dependence of the PL energy transfer efficiency was also obtained. It was also found that the fine structure of the 1.54-μm emission was different between EL and PL. It was speculated that Er atoms on different lattice sites, which were in different crystal fields, were excited depending on excitation processes.