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Quantum and Semiclassical Optics Journal of the European Optical Society Part B

Effect of non-centrosymmetry on Stark broadening in bulk indium antimonide crystal

J. T. Andrews, Pratima Sen

Published Oct 1, 1998• 2 citations
Publisher

Abstract

Stark shift and self-energy correction in a non-centrosymmetric semiconductor have been studied by using the time-dependent perturbation technique and considering the diagonal elements of the transition dipole moment operator to be finite. The Stark shift obtainable from the Rabi frequency shows a time dependence. The analysis is applied to a sample of InSb duly irradiated by a near-resonant laser and it is found that the magnitude of Stark shift decreases while the magnitude of self-energy correction increases due to the incorporation of non-centrosymmetry.

DOI
10.1088/1355-5111/10/5/003

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•Oct 25, 2000•0 citations
Stark shift and self-energy correction in a non-centrosymmetric semiconductor have been studied by using the time-dependent perturbation technique and considering the diagonal elements of the transition dipole moment operator to be finite. The Stark shift obtainable from the Rabi frequency shows a time dependence. The analysis is applied to a sample of InSb duly irradiated by a near-resonant laser and it is found that the magnitude of Stark shift decreases while the magnitude of self-energy correction increases due to the incorporation of non-centrosymmetry.
Using straightforward time-dependent perturbation treatment, transient coherent radiation-semiconductor interaction mechanisms are investigated analytically in a quantum well structure (QWS) duly irradiated by a moderate power femtosecond laser with photon energy slightly less than the crystal bandgap energy. The transition energy is calculated by recognizing the finite potential well depth of the QWS. The effects of higher excitonic states on the Stark shift and self-energy correction are examined in GaAs/AlGaAs QWS. The study shows a red shift with increasing excitation intensity and the shift is also found to be less when all the discrete excitonic states below the band edge are considered together. An increased self-energy correction accompanies this red shift.
We have analytically explored the nature of Stark shift and self energy correction in the presence of two discrete excitonic states i.e, the heavy-hole and light-hole valence bands, below the fundamental absorption edge of semiconductor quantum dots. The time dependent perturbation technique for a three-level system, under the near band gap resonant excitation regime, has been employed; with the incorporation of the relaxation and dephasing mechanisms phenomenologically. The detuning spectra of Stark shift and self energy correction and their dependence on a moderately strong electric field, have been analyzed. The numerical and analytical estimations in a weak noncentrosymmetric CdTe quantum dot show a decrease in Stark shift and an enhancement in self energy correction for both heavy-hole and light-hole excitons.
Based upon the time-dependent perturbation treatment of coherent radiation-semiconductor resonant interaction, the effect of an externally applied magnetic field on pulse propagation in bulk III-V semiconductors has been investigated analytically. Numerical estimations are made for a sample of InSb crystal duly irradiated by ultrafast infrared dye laser operating in the 3.9–9.4 μm wavelength range. The transmitted intensity profiles manifest the occurrence of pulse chirping and spectral broadening of the input pulse while propagating through the semiconducting crystal under the nonlinear dispersion regime. Although the mechanisms are different, similar characteristics were observed experimentally in atomic rubidium vapour in the presence of a strong magnetic field.
Using the density matrix approach, the effect of magnetic field on optical nutation and free induction decay (FID) has been investigated analytically in direct gap semiconductors. The numerical estimations made for a thin sample of bulk InSb duly irradiated by a Lead salt (PbEuSeTe) diode laser exhibit an enhancement in the beat signal intensity of the nutating output at large magnetic fields. The numerical analysis of free induction decay in InSb crystal–laser interacting system yield the results that both the decay time as well as transmitted field amplitude increase with increasing magnetic field.
The coherent response of a semiconductor three-state system to one or two intense light pulses is investigated experimentally on a 100 fs time scale. Three experiments constitute this dissertation: observation of excitonic Rabi oscillations, measurement of two-exciton coupled Stark shifting, and an attempt to observe dark states. Basic concepts of time-resolved ultrafast semiconductor spectroscopy are explained, followed by an analysis of semiconductor two- and three-state systems. Pure two- and three-state dynamics are derived from first principles, followed by the development of the appropriate semiconductor Bloch equations (SBE). Two-color pump-probe, two-color pump-pump, and pump-pump-probe techniques are explained in the context of three-state semiconductor experiments. The experimental setup is explained in detail. Resonant two-color pump-probe measurements resulted in the first observation of multiple excitonic Rabi oscillations. The common conduction band shared by the light-hole and heavy-hole excitons of an InGaAs multiple quantum well allowed us to measure hh-exciton density (Rabi) oscillations by probing lh-exciton absorption. By studying the intensity dependence of the Rabi frequency, we showed the important role of many-body effects in renormalizing the dipole energy. The shared conduction band also causes the lh-exciton resonance to Stark shift when the hh exciton is Stark shifted. We measured a transient Stark shifting of both resonances due to virtual hh-exciton transitions. We observed that the ratio of the hh-exciton shift to lh-exciton shift was 2:1 at large pump-exciton detuning, as predicted from a simple three-state dressed exciton picture. For smaller detunings we saw an increase in the ratio and a redshift of the non-dipole coupled exciton state. Both of these observations are consistent with the most recent theories and experiments on excitonic Stark shifting. For strong near-resonant pumping of both lh- and hh-exciton transitions, an intervalence-band Raman-type coherence follows from the SBE that results in a transparent eigenstate (dark state) when both pumps are equally detuned from resonance. The existence of this coherence is well-known in atomic-optical systems, but has been elusive in semiconductors. Our inconclusive experimental result is presented along with an evaluation of experimental shortcomings. In brief, the expected change is absorption was too small to see.