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Journal of Optics B Quantum and Semiclassical Optics

The dynamic Stark effect under a not-too-strong femtosecond excitation regime in quantum well structures

Sharmila Banerjee, Pratima Sen, Pranay K. Sen

Published Aug 13, 1999• 3 citations
Publisher

Abstract

Using straightforward time-dependent perturbation treatment, transient coherent radiation-semiconductor interaction mechanisms are investigated analytically in a quantum well structure (QWS) duly irradiated by a moderate power femtosecond laser with photon energy slightly less than the crystal bandgap energy. The transition energy is calculated by recognizing the finite potential well depth of the QWS. The effects of higher excitonic states on the Stark shift and self-energy correction are examined in GaAs/AlGaAs QWS. The study shows a red shift with increasing excitation intensity and the shift is also found to be less when all the discrete excitonic states below the band edge are considered together. An increased self-energy correction accompanies this red shift.

DOI
10.1088/1464-4266/1/5/301

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Physical Review Letters•Mar 6, 1989•163 citations
Using straightforward time-dependent perturbation treatment, transient coherent radiation-semiconductor interaction mechanisms are investigated analytically in a quantum well structure (QWS) duly irradiated by a moderate power femtosecond laser with photon energy slightly less than the crystal bandgap energy. The transition energy is calculated by recognizing the finite potential well depth of the QWS. The effects of higher excitonic states on the Stark shift and self-energy correction are examined in GaAs/AlGaAs QWS. The study shows a red shift with increasing excitation intensity and the shift is also found to be less when all the discrete excitonic states below the band edge are considered together. An increased self-energy correction accompanies this red shift.
We have analytically explored the nature of Stark shift and self energy correction in the presence of two discrete excitonic states i.e, the heavy-hole and light-hole valence bands, below the fundamental absorption edge of semiconductor quantum dots. The time dependent perturbation technique for a three-level system, under the near band gap resonant excitation regime, has been employed; with the incorporation of the relaxation and dephasing mechanisms phenomenologically. The detuning spectra of Stark shift and self energy correction and their dependence on a moderately strong electric field, have been analyzed. The numerical and analytical estimations in a weak noncentrosymmetric CdTe quantum dot show a decrease in Stark shift and an enhancement in self energy correction for both heavy-hole and light-hole excitons.
The paper discusses the analytical investigation of the occurrence of coherent optical transient processes such as dynamic Stark effect and free induction decay in direct-gap semiconductor quantum wires with thickness and width smaller than the bulk Wannier-Mott exciton Bohr radius. The role of a moderately strong magnetic field has been critically evaluated in the occurrence of the transient processes. The analysis is based upon the time dependent perturbation treatment of the coherent radiation-semiconductor interaction model under near band gap resonant excitation regime. The excitation intensity is kept below the Mott transition regime. Numerical estimates made for a GaAs/AlGaAs quantum wire irradiated by femtosecond pulse Ti:Sapphire laser establishes that the Stark shift, Stark broadening as well as free induction decay are all considerably influenced by the magnetic field. Moreover, the wire width also affects Stark splittings.
Summary form only given. In the excitonic ac Stark shift in quantum wells the excitonic absorption line is blueshifted by shining on the sample an intense laser pulse, whose frequency is lower than the exciton transition frequency. The effect is bigger when the laser spectrum approaches the resonance with the excitonic absorption. But if the laser and excitonic absorption spectra sensibly overlap, a great amount of electronic population is excited and consequently the Coulomb nonlinearities due to the interaction between excited carries or excitons dramatically increase. One prominent effect under these conditions is the excitation- induced dephasing which can destroy the coherence of the electronic system and therefore the coupling between excitons and light, which is inherently coherent. Some evidence for the resonant Stark effect was already reported, but the direct observation of the spectral splitting was still missing. This observation demonstrates that the coherent exciton light coupling in semiconductors can be strong enough to survive the fast dephasing, and that therefore an efficient ultrafast manipulation of the exciton absorption in the coherent transient is possible. In order to magnify the ac Stark effect and its visibility a special sample was designed: a single In/sub 0.04/Ga/sub 0.96/As quantum well is grown on the top of an AlAs/AlGaAs distributed Bragg reflector; two /spl lambda//2 spacers separate the quantum well from the mirror and from the air. In this configuration the light field incident on the sample and the one reflected by the mirror constructively interfere at the quantum well position, giving a high effective absorption.
We present a theoretical analysis to examine the strain effect on light and heavy hole energy levels and role of exciton and bi-excitons on the absorptive optical mutation in InxGa1-xAs/GaAs quantum dots (QDs) near the band edge. The a nalysis is based upon the strain induced Luttinger Hamiltonian and time dependent perturbation technique of the coherent radiation-semiconductor interaction model for a three-level system under near band gap resonant excitation regime. The relaxation and dephasing mechanisms phenomenological have been incorporated. Numerical estimations of refractive and absorptive optical mutation have been made for a InGaAs/GaAs quantum dot duly shined by femtosecond pulse Ti: sapphire laser. Our results are found to agree qualitatively with available experimental observations.