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Physical Review Letters

Coherent Excitation Spectroscopy on Inhomogeneous Exciton Ensembles

A. Euteneuer, E. Finger, Martin Rudolf Hofmann, W. Stolz, T. Meier, P. Thomas, Stephan W. Koch, Wolfgang W. Rühle, R. Hey, Klaus Ploog

Published Sep 6, 1999• 40 citations
Publisher

Abstract

A new spectroscopic technique is demonstrated on three characteristically different semiconductor quantum-well samples. Coherent excitation spectroscopy reveals coherent coupling and effectively suppresses the signatures of inhomogeneous broadening and incoherent transfer between various excitonic states in quantum wells. Coherently coupled homogeneous subsystems are analyzed in an inhomogeneously broadened excitonic ensemble.

DOI
10.1103/physrevlett.83.2073

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A new spectroscopic technique is demonstrated on three characteristically different semiconductor quantum-well samples. Coherent excitation spectroscopy reveals coherent coupling and effectively suppresses the signatures of inhomogeneous broadening and incoherent transfer between various excitonic states in quantum wells. Coherently coupled homogeneous subsystems are analyzed in an inhomogeneously broadened excitonic ensemble.
Summary form only given. Inhomogeneous broadening is the most obvious consequence of disorder, and an inhomogeneously broadened exciton line might be considered as a superposition of homogeneously broadened subensembles of excitons. However, a possible coherent coupling in inhomogeneously broadened exciton ensemble structures leads to effects like disorder induced dephasing. We study the excitonic structure of various semiconductor quantum wells with different types and strengths of disorder by means of coherent excitation spectroscopy.
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A new method to measure the coherence of inhomogeneously broadened optical excitations in semiconductor nanostructures is presented. The secondary emission of excitons in semiconductor quantum wells is investigated. The spectrally-resolved coherence degree of resonantly-excited light emission is deduced from the intensity fluctuations over the emission directions (speckles). The spectral correlations of the speckles give direct access to the homogeneous line width as function of spectral position within the inhomogeneously broadened ensemble. The combination of static disorder and phonon scattering leads to a partially coherent emission. The temperature dependence of the homogeneous line width is well explained by phonon scattering.
Coherent transient optical spectroscopy techniques provide a means of studying the relaxation of electronic excitations in solids. Using these techniques the authors examine the relaxation of excitons in GaAs-AlGaAs multiple quantum wells at low temperature. Localization of excitons due to interface disorder results in inhomogeneous broadening of the absorption spectrum and relaxation due to migration between localization sites. The temperature dependence and energy dependence of the relaxation indicate the presence of complex scattering mechanisms. The dependence of the optical response on the polarization of the incident excitation fields is shown to result in a dramatic change of the dephasing and broadening characteristics of the optical response. This response is interpreted in terms of the presence of both localized and delocalized excitons. Mechanisms for the polarization dependence are discussed.>