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Soviet Journal of Quantum Electronics

Semiconductor laser with133Cs vapor external selective mirror

Vladimir L Velichansky, Alexander S. Zibrov, V V Nikitin, Vladimir A. Sautenkov, V K Malyshev, G. G. Kharisov

Published Jul 31, 1978• 6 citations
Publisher

Abstract

Pulsed stimulated emission near the D2 line of 133Cs (852.1 nm) was obtained from a semiconductor laser with an external selective element utilizing specular reflection from a cesium vapor cell. The power and spectral width of the stimulated emission at a vapor pressure of 2 Torr were 1 mW and 5×10−3 nm, respectively. Investigations were made of the spectral and temporal characteristics of the laser radiation at different cesium vapor pressures. An analysis was made of the conditions needed to enhance substantially the average stimulated emission power. The possibility of using a laser with an external selectively reflecting cell for optical pumping of alkali metal vapors is discussed. The resonance absorption lines of rubidium and potassium were recorded using a pulsed injection laser.

DOI
10.1070/qe1978v008n07abeh010427

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We report the preliminary results of experimental studies of a dense cesium vapor in all-sapphire sealed-off Cs cell (temperature up to 500 °C, atomic and molecular densities up to 1018 and 3.2x1016 cm-3, respectively) in selective reflection (SR) configuration. Probing the vapor by a 780 nm laser radiation scanned in 20 GHz range, we have observed a spectral structure, which appears in the vapor temperature range of 250 - 400 °C. Though the cell is filled with pure cesium, starting from 300 °C we have revealed a noticeable SR contribution of rubidium atomic D2 line transitions that fall in the laser tuning range. The spectral features observed in present work can be attributed not only to cesium dimers (Cs2) having absorption band in this spectral region, but also to RbCs molecules. Relevant spectroscopic properties of these molecules are also addressed. We believe this is the first observation of selective reflection from the interface of dielectric and molecular vapor. More experiments and theoretical treatment is required to clarify the mechanisms involved and identify the origin of each spectral component, the further work program is outlined.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Oct 29, 2010•6 citations
Pulsed stimulated emission near the D2 line of 133Cs (852.1 nm) was obtained from a semiconductor laser with an external selective element utilizing specular reflection from a cesium vapor cell. The power and spectral width of the stimulated emission at a vapor pressure of 2 Torr were 1 mW and 5×10−3 nm, respectively. Investigations were made of the spectral and temporal characteristics of the laser radiation at different cesium vapor pressures. An analysis was made of the conditions needed to enhance substantially the average stimulated emission power. The possibility of using a laser with an external selectively reflecting cell for optical pumping of alkali metal vapors is discussed. The resonance absorption lines of rubidium and potassium were recorded using a pulsed injection laser.
An investigation was made of selective specular reflection from 133Cs vapor in the range of atomic concentrations between 4×1013 and 2×1015 cm−3 where collisional broadening of the D2 line is less than the Doppler broadening. The radiation source was an injection laser. Intra-Doppler resonances corresponding to the hyperfine structure of the excited state were recorded in the selective reflection profile. Shifts of the reflection resonances relative to the luminescence resonances of the atomic beam did not exceed 50 MHz. The possiblity of using selective reflection for linear spectroscopy of atomic lines without Doppler broadening is discussed.
Laser Generation without Population Inversion in the Red Wing of the D1{D}_{1}D1​-Line of Alkali Metal Atoms under Resonant Diode Pumping
A new method of laser radiation generation without population inversion in the red wing of the D1D_{1}D1​ -line of alkali metal atoms under resonant absorption of broadband radiation of pump laser diodes at the D1D_{1}D1​ transition is studied theoretically. The appearance of laser generation is caused by the fact that the probability of stimulated emission in the red wing of the spectral line exceeds the probability of absorption if homogeneous broadening due to interaction between active particles and the buffer gas significantly exceeds the natural broadening (under high pressures of the buffer gas). Analytical formulas representing the operation of a transversely diode-pumped alkali metal vapor laser are obtained. It is found that cesium atoms are the most promising object for observation of laser generation without population inversion in the red wing of the D1D_{1}D1​ -line of alkali metal atoms. In a sufficiently long active medium (the length of the medium is 50 times its width), the efficiency of pumping radiation conversion into laser radiation can reach 57% at a buffer gas pressure of 5 atm, a pump diode radiation intensity of 5 kW/cm 2{}^{2}2 , and a half-width of its spectrum of 1 cm −1{}^{-1}−1 . The laser radiation frequency can be tuned by several tens of cm −1{}^{-1}−1 .
Stimulated emission on the ultraviolet and blue transitions in Cs has been achieved by pumping via two-photon absorption and four-wave mixing for the pump transition 62S12→82D32,52. The emission performance of the optically pumped cesium vapor laser operating in ultraviolet and blue has been extended to 650 nJ/pulse for 387 nm, 1 to 3 μJ/pulse for 388 nm, 200 nJ/pulse for 455 nm, and 500 nJ/pulse for 459 nm. Emission performance improves dramatically as the cesium vapor density is increased, and no scaling limitations associated with energy pooling or ionization kinetics have been observed.
Stimulated emission of the 535 nm line of thallium was observed when a Tl-He mixture was pumped optically in the violet wing of a pressure-broadened resonance line of thallium at 377.6 nm by a recombination He–Ca laser emitting at λ = 373.7 nm. Pumping resulted from the absorption transitions between repulsive terms of the Tl-He quasimolecule. The average stimulated radiation power reached 5 mW when the pulse repetition frequency was 6 kHz. The efficiency of conversion of the useful part of the pump pulse was 45%.
We report the preliminary results of experimental studies of a dense cesium vapor in all-sapphire sealed-off Cs cell (temperature up to 500 °C, atomic and molecular densities up to 1018 and 3.2x1016 cm-3, respectively) in selective reflection (SR) configuration. Probing the vapor by a 780 nm laser radiation scanned in 20 GHz range, we have observed a spectral structure, which appears in the vapor temperature range of 250 - 400 °C. Though the cell is filled with pure cesium, starting from 300 °C we have revealed a noticeable SR contribution of rubidium atomic D2 line transitions that fall in the laser tuning range. The spectral features observed in present work can be attributed not only to cesium dimers (Cs2) having absorption band in this spectral region, but also to RbCs molecules. Relevant spectroscopic properties of these molecules are also addressed. We believe this is the first observation of selective reflection from the interface of dielectric and molecular vapor. More experiments and theoretical treatment is required to clarify the mechanisms involved and identify the origin of each spectral component, the further work program is outlined.