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Applied Physics Letters

Elliptically polarized absorption spectroscopy and observation of spin coherence in intrinsic GaAs

Tianshu Lai, Xiaodong Liu, Haihong Xu, Zhongxing Jiao, Liang Lei, Jinhui Wen, Weizhu Lin

Published Dec 22, 2005• 16 citations
Publisher

Abstract

The elliptically polarized absorption spectroscopy is further developed to observe electron spin coherence dynamics in an intrinsic bulk GaAs in Voigt geometry. Absorption saturation quantum beats are observed and explained as spin-precession-dependent state filling. An analytical model is developed quantitatively to describe the quantum beats and used to fit experimental data to retrieve spin coherence lifetime. Comparing to the reported data reveals that the spin coherence dynamics of the real and imaginary of a complex refractive index is much different.

DOI
10.1063/1.2150276

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The elliptically polarized absorption spectroscopy is further developed to observe electron spin coherence dynamics in an intrinsic bulk GaAs in Voigt geometry. Absorption saturation quantum beats are observed and explained as spin-precession-dependent state filling. An analytical model is developed quantitatively to describe the quantum beats and used to fit experimental data to retrieve spin coherence lifetime. Comparing to the reported data reveals that the spin coherence dynamics of the real and imaginary of a complex refractive index is much different.
Circularly polarized absorption quantum-beat spectroscopy is used to study excess-energy dependence of electron-spin coherence dynamics in intrinsic GaAs. Absorption quantum beats are observed. The quantum-beat oscillatory frequency is used as a high precision measure of electron g factor. Double linear energy dependence of g factor is obtained and disagrees with the prediction of k∙p theory. A theoretical calculation reveals the double linear energy dependence reflects the energy dependence of g factor of electrons measured through light-hole- and heavy-hole-electron transitions, respectively. The phase of the quantum beats provides the key information to distinguish the two transitions experimentally.
An elliptically polarized pump-probe spectroscopy is developed. A theoretical model is derived from the rate equations of two-level system with small signal approximation to describe the experimental signal of the spectroscopy. The spectroscopy eliminates the systematic errors between theories and experimental results in present circularly polarized pump-probe spectroscopy, and is implemented easily in experiments. The initial degree of spin polarization of carriers in an excited state can be extracted by means of the spectroscopy, which is an important parameter in the investigation of spatial transport of spin polarization. The electron-spin relaxation in GaAs quantum wells is studied by using this spectroscopy.
We report experimental studies of absorption quantum beats induced by electron spin coherence in GaAs quantum wells. Absorption quantum beats occur for strongly localized excitons, but nearly vanish for mobile excitons in the third order nonlinear optical response. Pronounced quantum beats for mobile excitons emerge in an unusual fifth order process. These results, along with a qualitative analysis based on the use of N-exciton eigenstates, elucidate how the manifestation of electron spin coherence in the excitonic nonlinear optical response can differ fundamentally from that in an atomic system.
We report experimental studies of coherent spin dynamics of donor-bound electrons in high-purity GaAs by using transient differential transmission. The donor-bound exciton transitions, which are not visible in the linear absorption spectrum, are spectrally resolved in the nonlinear differential transmission spectra. The spin beats in the transient differential transmission response, arising from electron spin precession in an external magnetic field, are investigated with the pump and probe coupling to various donor-bound exciton transitions. The spectral dependence of the spin beats provides important information on the polarization selection rule for the underlying donor-bound exciton transitions. The polarization selection rules deduced from these experiments indicate that contributions from higher-energy donor-bound exciton transitions can severely limit the effectiveness of optical spin control using mechanisms such as polarization-dependent optical Stark shifts.
We report the experimental demonstration of coherent Raman resonance from electron spin coherence in GaAs\mathrm{GaAs}GaAs quantum wells. Coherent Raman resonance, which is a precursor for electromagnetically induced transparency, appears in the differential transmission response from localized excitons in an external magnetic field applied in Voigt geometry. The spectral domain spin study reveals that the optical processes involved differ from those in the transient domain, leading to distinct polarization and intensity dependences.
Carrier spin coherence in a p-doped GaAs/(Al,Ga)As quantum well with a diluted hole gas is studied by picosecond pump-probe Kerr rotation. For resonant optical excitation of the positively charged exciton the spin precession shows two types of oscillations: Electron spin beats decaying with the charged exciton radiative lifetime of 50 ps, and long-lived hole spin beats with dephasing times up to 650 ps, which decrease with increasing temperature, underlining the importance of hole localization. The mechanism of hole spin coherence generation is discussed.