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Physical Review Letters

Vanishing and Emerging of Absorption Quantum Beats from Electron Spin Coherence in GaAs Quantum Wells

Phedon Palinginis, Hailin Wang

Published Jan 23, 2004• 37 citations
Publisher

Abstract

We report experimental studies of absorption quantum beats induced by electron spin coherence in GaAs quantum wells. Absorption quantum beats occur for strongly localized excitons, but nearly vanish for mobile excitons in the third order nonlinear optical response. Pronounced quantum beats for mobile excitons emerge in an unusual fifth order process. These results, along with a qualitative analysis based on the use of N-exciton eigenstates, elucidate how the manifestation of electron spin coherence in the excitonic nonlinear optical response can differ fundamentally from that in an atomic system.

DOI
10.1103/physrevlett.92.037402

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We report experimental studies of absorption quantum beats induced by electron spin coherence in GaAs quantum wells. Absorption quantum beats occur for strongly localized excitons, but nearly vanish for mobile excitons in the third order nonlinear optical response. Pronounced quantum beats for mobile excitons emerge in an unusual fifth order process. These results, along with a qualitative analysis based on the use of N-exciton eigenstates, elucidate how the manifestation of electron spin coherence in the excitonic nonlinear optical response can differ fundamentally from that in an atomic system.
We report the experimental demonstration of coherent Raman resonance from electron spin coherence in GaAs\mathrm{GaAs}GaAs quantum wells. Coherent Raman resonance, which is a precursor for electromagnetically induced transparency, appears in the differential transmission response from localized excitons in an external magnetic field applied in Voigt geometry. The spectral domain spin study reveals that the optical processes involved differ from those in the transient domain, leading to distinct polarization and intensity dependences.
We report experimental studies of electromagnetically induced transparency (EIT) arising from exciton spin coherence in the transient optical response of GaAs quantum wells. The exciton spin coherence, which is a direct result of Coulomb correlations between excitons with opposite spins, is induced via bound or unbound two-exciton states. Theoretical analyses based on a three-level model illustrate the manifestation of EIT in a transient regime and provide qualitative guidance for understanding the transient behaviors observed in the EIT experiments. Additional studies of the effects of exciton energy renormalization on optical Stark splitting also provide insights on how exciton many-body interactions can lead to unusual time-dependent asymmetric EIT line shapes.
Summary form only given. The optical properties of semiconductor quantum wells (QW) and, in particular, the coherent dynamics of excitons following resonant excitation with ultrafast laser pulses have attracted much attention in recent years. It is generally accepted that there is a transfer of coherence between the optical field and the QW that disappears in a characteristic time T/sub 2/ (picoseconds for GaAs) after the laser is turned off. However, the questions as to how the coherence is actually induced and that of the nature of the coherent state of the solid are poorly understood. In this work we address these points by re-examining the longstanding problem of the (classical vs. quantum) nature of the ubiquitous beats associated with the light-hole (LX) heavy-hole (HX) excitons, which are observed in transient optical experiments on QW. To this end, we consider the coherent behavior of excitons using the simplest albeit non-trivial model where they are treated as non-interacting bosons. Our results bear directly on studies for which nonlinear effects are not important and are not aimed directly at explaining the fourwave-mixing (FWM) experiments that dominate the field. Nevertheless, since nonlinear effects are, typically, weak compared with harmonic contributions, the free boson picture provides in all cases the correct lowest order wavefunction of the photoexcited solid.
In this paper, we review our recent experimental studies on electromagnetically induced transparency (EIT) from electron spin coherences in semiconductor quantum wells. Coherent Raman resonances, manifestations of EIT from electron spin coherences at relatively low pump intensities, were demonstrated in both V-type and Λ-type three-level systems via heavy-hole exciton and trion transitions in undoped and doped quantum wells, respectively. Coherent Raman resonances from electron spin coherences via light-hole transitions were also demonstrated in a waveguide geometry that enables a long optical interaction length as well as a large absorption coefficient. Experimental approaches that can avoid or reduce detrimental many-body effects in quantum wells are suggested for the realization of nearly ideal EIT processes.
Carrier spin coherence in a p-doped GaAs/(Al,Ga)As quantum well with a diluted hole gas is studied by picosecond pump-probe Kerr rotation. For resonant optical excitation of the positively charged exciton the spin precession shows two types of oscillations: Electron spin beats decaying with the charged exciton radiative lifetime of 50 ps, and long-lived hole spin beats with dephasing times up to 650 ps, which decrease with increasing temperature, underlining the importance of hole localization. The mechanism of hole spin coherence generation is discussed.