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Measurement Techniques

Quantum voltage measures based on high-temperature superconductors

V. I. Krzhimovskii, Alexander S. Katkov, E. D. Koltik, Sergey V. Kozyrev

Published Feb 1, 1991• 0 citations
Publisher
DOI
10.1007/bf00990829

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This article discusses the design and measurement of high temperature superconductor transimpedance amplifiers using bi-crystal junction SQUID arrays. The peak to peak modulation voltages of the arrays as a function of their SQUID inductance were measured. The measured transresistance, dV/sub o//dI/sub i/, of a 30-element array of 5-pH SQUIDs was 4 V/A. The voltage modulation depth of the 30-element array was 2 mV and the white noise of the array was 1.0 nV/Hz/sup 1/2/ at 100 kHz. The dynamic range of the array was 120 dB in a one hertz bandwidth. This device has the potential to be used as a broadband amplifier for low impedance sources.
We have studied the far infrared behavior of high -T/sub c/ superconductor-normal metal-superconductor (SNS) microbridges with T/sub c/>85 K and critical current-resistance products (I/sub c/R/sub N/) as high as 10 mV at 4 K. These are the highest I/sub c/R/sub N/ products reported to date for microfabricated Josephson junctions of any material. The junctions were integrated at the feeds of planar log-periodic antennas made from Au thin films. The junctions had dc normal state resistances R/sub N/ between 6 and 38 /spl Omega/, reasonably well matched to the antenna's estimated RF impedance of 53 /spl Omega/. Far infrared laser radiation at 404, 760, and 992 GHz induced distinct Shapiro steps (i.e. constant voltage steps at voltages n(hf/2e), n=1,2,...) in the current voltage characteristics as well as modulation of the critical current. Steps were observed at voltages up to 17 mV and 6 mV, at temperatures of 9 K and 57 K respectively. This corresponds to maximum Josephson oscillation frequencies of 8 and 3 THz at these temperatures. These are the first far infrared measurements performed on high T/sub c/ junctions. Measurements of the power, frequency, and temperature dependence of the Shapiro steps are presented and discussed in the context of a resistively and capacitively shunted junction (RCSJ) model. A value of 4.5 fF for the junction capacitance is inferred from the hysteresis of the slightly underdamped current-voltage characteristics.>