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Journal of Applied Physics

Thermally induced optical bistability and self-oscillation in a nonlinear etalon filled with optical adhesive

Hong Jin Kong, Wol Yon Hwang

Published May 15, 1990• 5 citations
Publisher

Abstract

We report the optical bistability and the self-oscillation of a nonlinear Fabry–Perot etalon filled with Norland optical adhesive 81. A normal and an inverted bistable loop were observed for a short (80msec) and a long (1.2sec) input optical pulse duration, respectively. The self-oscillation properties depended sensitively on the substrate and the spacer thicknesses. The measured self-oscillation period became longer with an increase of the spacer thickness and was in the range o 0.2 to 3 seconds. The inversion of the bistable loop, and the self-oscillation in this experiment can be explained by the competition between the fast thermal refractive index change and the slow linear thermal expansion of the etalon.

DOI
10.1063/1.345218

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IEEE Journal of Quantum Electronics•May 1, 1991•95 citations
We report the optical bistability and the self-oscillation of a nonlinear Fabry–Perot etalon filled with Norland optical adhesive 81. A normal and an inverted bistable loop were observed for a short (80msec) and a long (1.2sec) input optical pulse duration, respectively. The self-oscillation properties depended sensitively on the substrate and the spacer thicknesses. The measured self-oscillation period became longer with an increase of the spacer thickness and was in the range o 0.2 to 3 seconds. The inversion of the bistable loop, and the self-oscillation in this experiment can be explained by the competition between the fast thermal refractive index change and the slow linear thermal expansion of the etalon.
A bistable etalon, consisting of an optically nonlinear semiconductor spacer layer sandwiched between two Bragg mirrors, has been optimized for use in reflection, using a numerical model for a self-consistent carrier density based on published experimental data for the nonlinear absorption alpha(I,lambda) and refraction DELTA-n(I,lambda). The saturation behavior of the refractive index and the absorption in bulk GaAs has been investigated at different wavelengths. High saturation values of DELTA-n(s) almost-equal-to .080 were found 20 meV below the gap. 30 meV above the gap we observed a comparable index change, together with an absorption saturation feature, leading to a highly nonlinear response close to the bistability threshold in our unoptimized etalon.
A theoretical demonstration of optical bistability in periodic layered media, particularly in long-period GaAs/AlAs superlattices is presented. The proposed structure consists of a periodic multilayer system, as opposed to previously demonstrated nonlinear bistable devices which employed Fabry-Perot etalons. The optical resonance effect which is essential for bistable devices is, in this case, induced by a refractive index modulation. The nonlinear active medium is distributed in the whole structure rather than placed between the two mirrors of a Fabry-Perot cavity. It is shown by a complete calculation of wave propagation in the periodic nonlinear medium that a multiple valued feature appears in the structure's nonlinear reflectivity spectrum. The input/output characteristics of the structure exhibit bistable hysteresis similar to that of a nonlinear Fabry-Perot etalon.>