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Electronics Letters

Demonstration of over 100 million round trips in recirculating fibre loop with all-optical regeneration

Vladimir I. Belotitskii, Eugenii A. Kuzin, M. P. Petrov, Vasilii V. Spirin

Published Jan 7, 1993• 31 citations
Publisher

Abstract

More than 100 million round trips of 100ps optical pulses with a pulse repetition frequency of 100 MHz through a fibre recirculating loop are demonstrated. The signal is regenerated by a NOR gate operating via the SRS effect. The recirculating time is more than 10min. This indicates that such a loop can be used to develop an all-optical memory with a long storage time.

DOI
10.1049/el:19930032

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More than 100 million round trips of 100ps optical pulses with a pulse repetition frequency of 100 MHz through a fibre recirculating loop are demonstrated. The signal is regenerated by a NOR gate operating via the SRS effect. The recirculating time is more than 10min. This indicates that such a loop can be used to develop an all-optical memory with a long storage time.
The feasibility of constructing an all-optical dynamic memory based on stimulated Raman scattering (SRS) in a fibre waveguide is discussed. A possible use of an SRS inverter for regeneration of optical signals is considered. Theoretical and experimental investigations are reported of the functional properties of an SRS inverter. The construction and investigation of a prototype all-optical fibre memory with an SRS inverter are described. The repetition frequency of the optical pulses along a fibre loop is 100 MHz and the loop capacity is 500 bits. Pulse circulation is reported over a period of 10 min at an average pump power of 2 W. The response time and the energy requirements of devices with an SRS inverter, and ways of improving their characteristics are considered.
The possibility of providing long-term storage of a binary sequence of pulses circulating in a fiber loop is discussed. The regeneration of the sequence is achieved by a fiber logic gate based on stimulated Raman scattering. Estimations show that a possible pulse repetition rate of 1010 Hz for the stimulated-Raman-scattering gate operation can be expected for an average pump power of 1 W. The circulation of the binary sequence of 100-ps pulses was observed during 10 min in a loop 870 m long. It corresponds to more than 106 round trips around the loop.
All resonant systems throughout science and engineering, independent of their physical implementation have a bandwidth that is inversely related to the decay time. A similar relation exists in all slow-light systems, where the group index (and therefore the delay for a given footprint) is inversely related to the bandwidth. Therefore, resonant or slow-light systems can either store a broad signal for a short time, or a narrow signal for a long time, but cannot achieve large delay for broad bandwidth signals.Here we discuss our recent work on non-reciprocal optical systems that are not constrained by the delay-bandwidth limit. We show that large, broadband optical delay is not a pipe dream and is achievable with current optical technology. We discuss the underlying physics of delay and bandwidth in non-reciprocal optical systems and present an experimental implementation, based on a figure-9 cavity. We demonstrate a delay-bandwidth product 30 times above the seemingly fundamental time-bandwidth limit of traditional systems. Furthermore, we show that the optical pulse can be released after an arbitrary number of round trips, providing the control and tunability lacking from conventional spiral waveguide or fibre loop delay lines.
The use of fibre-loop memories is being experimented for solving routing contention of data cells in photonic high bit rate ATM switching fabrics.1 The simplest fiber-loop memory looks like a ring laser consisting of a semiconductor laser amplifier (SOA), a span of fibre introducing a delay of the order of an ATM cell duration (10–6-sec) and a 50/50 directional coupler (Fig. 1). To compensate for the power tapping at the directional coupler while avoiding the onset of laser oscillations, the SOA is biased above the ring laser threshold only for a limited number of round trips, then the bias current is switched off. The memory is thus driven through the transition from a state ruled by spontaneous emission toward a state above lasing threshold, in which stimulated emission is predominant. Far enough from the beginning of the transition the intensity fluctuations display a maximum.2,3 The transition is completed after a time depending on the final state intensity.2 These features significantly affect the maximum storage time and noise behavior of the memory.