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Physica C Superconductivity

Submicron Nb-Al/Al oxide-Nb tunnel junctions sandwiched between Al films

Doris Maier, Hermann Rothermel, K. H. Gundlach, Ralf Zimmermann

Published Sep 1, 1996• 12 citations
Publisher
DOI
10.1016/0921-4534(96)00398-x

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Nb/Al–AlO x /Nb tunnel junctions are often used in the studies of macroscopic quantum phenomena and superconducting qubit applications of the Josephson devices. In this work, we describe a convenient and reliable process using electron beam lithography for the fabrication of high-quality, submicron-sized Nb/Al–AlO x /Nb Josephson junctions. The technique follows the well-known selective Nb etching process and produces high-quality junctions with V m = 100 mV at 2.3 K for the typical critical current density of 2.2 kA/cm 2 , which can be adjusted by controlling the oxygen pressure and oxidation time during the formation of the tunnelling barrier. We present the results of the temperature dependence of the sub-gap current and in-plane magnetic-field dependence of the critical current, and compare them with the theoretical predictions.

Chinese Physics B•Aug 1, 2008•7 citations
A fabrication process for submicron Nb-Al-oxide-Nb tunnel junctions using photoresist lines and optical lithography is described. With 0.6 mu m wide resist lines, junction areas of about 0.4 mu m 2 were obtained. At present the maximum current density obtainable is 8500 A cm -2 , and for this the best V m parameters of the submicron junctions are 47 mV at 4.2 K and 150 mV at 2.5 K. Compared with standard photoresist pads for junction definition, photoresist lines are more stable and result in junction areas closer to the areas on the mask. A weak increase of the gap voltage with decreasing junction size is observed. Finally, the performance of a 345 GHz receiver incorporating a two-junction array with integrated filter and tuning circuit is discussed.
Nb/Al–AlO x /Nb tunnel junctions are often used in the studies of macroscopic quantum phenomena and superconducting qubit applications of the Josephson devices. In this work, we describe a convenient and reliable process using electron beam lithography for the fabrication of high-quality, submicron-sized Nb/Al–AlO x /Nb Josephson junctions. The technique follows the well-known selective Nb etching process and produces high-quality junctions with V m = 100 mV at 2.3 K for the typical critical current density of 2.2 kA/cm 2 , which can be adjusted by controlling the oxygen pressure and oxidation time during the formation of the tunnelling barrier. We present the results of the temperature dependence of the sub-gap current and in-plane magnetic-field dependence of the critical current, and compare them with the theoretical predictions.