Efficiency of population of the4I13/2level of the Er3+ion and the possibility of lasing at 1.5 μm in Yb, Er:YAG at high temperatures
B. I. Galagan, Boris I. Denker, Vyacheslav V Osiko +1 more
It is shown that, as the temperature of an Yb, Er:YAG crystal is increased from room temperature to 400–600°C, the efficiency of energy accumulation on the 4 I 13/2 level of the Er 3+ ion increases by several times upon optical pumping through Yb 3+ ions. Under these conditions, up to 60% of erbium ions can be excited, which gives promise that lasing at a wavelength of 1.54 μm can be achieved in the Yb, Er:YAG crystal in the three-level scheme.
Quantum Electronics•Oct 31, 2007•5 citations