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Optics Letters

15 μm polarization entanglement generation based on birefringence in silicon wire waveguides

Ning Lv, Wei Zhang, Yuan Guo, Qiang Zhou, Yidong Huang, Jiangde Peng

Published Jul 27, 2013• 21 citations
Publisher

Abstract

In this Letter, the 1.5 μm polarization entanglement generation is realized in a silicon wire waveguide utilizing its birefringence. In this scheme, two orthogonal polarized correlated states are generated by scalar processes of spontaneous four-wave mixing (SFWM) in the quasi-transverse electrical and quasi-transverse magnetic modes, respectively. Meanwhile, the vector processes of SFWM are suppressed by the group birefringence in the waveguide. The maximum polarization entangled state is generated by optimizing the pump polarization, which is demonstrated by the experiments of two-photon interference and polarization indistinguishability at one side. The fringe visibilities of two-photon interferences are 96.8±4.7% and 86.0±3.7% under two nonorthogonal polarization detection settings, respectively. This scheme provides a simple way to realize silicon integrated sources for 1.5 μm polarization entanglement generation.

DOI
10.1364/ol.38.002873

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In this Letter, the 1.5 μm polarization entanglement generation is realized in a silicon wire waveguide utilizing its birefringence. In this scheme, two orthogonal polarized correlated states are generated by scalar processes of spontaneous four-wave mixing (SFWM) in the quasi-transverse electrical and quasi-transverse magnetic modes, respectively. Meanwhile, the vector processes of SFWM are suppressed by the group birefringence in the waveguide. The maximum polarization entangled state is generated by optimizing the pump polarization, which is demonstrated by the experiments of two-photon interference and polarization indistinguishability at one side. The fringe visibilities of two-photon interferences are 96.8±4.7% and 86.0±3.7% under two nonorthogonal polarization detection settings, respectively. This scheme provides a simple way to realize silicon integrated sources for 1.5 μm polarization entanglement generation.
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In this paper, correlated photon pairs at 1.55μm are generated in a silicon wire waveguidewith a length of 1.6 mm. The ratio between coincidence count rate and accidental coincidence count rate under room temperature is 19, showing the property of low Raman noise and strong quantum correlation. Moreover, the experiment shows that photon pair generation isstrongly dependent on pump polarization direction. Using quantum perturbation theory, we analyze the contribution of scalar and vectorspontaneous four-wave mixing processes to the generated photon pairs. Due tohigh nonlinear coefficient and high coupling efficiency, the generation rate in quasi-TE mode is much larger than that in quasi-TM mode.The combination of calculated photon pair generation rates through scalar and vector spontaneous four-wave mixing processes agrees well with the experimental result.
In this paper, correlated photon pairs at 1.55μm are generated in a silicon wire waveguidewith a length of 1.6 mm. The ratio between coincidence count rate and accidental coincidence count rate under room temperature is 19, showing the property of low Raman noise and strong quantum correlation. Moreover, the experiment shows that photon pair generation isstrongly dependent on pump polarization direction. Using quantum perturbation theory, we analyze the contribution of scalar and vectorspontaneous four-wave mixing processes to the generated photon pairs. Due tohigh nonlinear coefficient and high coupling efficiency, the generation rate in quasi-TE mode is much larger than that in quasi-TM mode. The combination of calculated photon pair generation rates through scalar and vector spontaneous four-wave mixing processes agrees well with the experimental result.