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Applied Physics Letters

Submillimeter wave responses in NbN/AlN/NbN tunnel junctions

Yoshinori Uzawa, Zhen Wang, Akira Kawakami, Bokuji Komiyama

Published Apr 10, 1995• 19 citations
Publisher

Abstract

The submillimeter wave frequency responses of NbN/AlN/NbN tunnel junctions have been investigated using quasioptical coupling techniques and an optically pumped far-infrared laser. A two junction array was integrated at the feeds of a bowtie antenna. Measurements on the junctions were made by monitoring photon-assisted tunneling steps induced in the current–voltage characteristics. These n=±1 photon steps were clearly observed with irradiation at 303, 594, 693, and 762 GHz. The results suggest it will be possible to realize submillimeter wave mixers by using these junctions.

DOI
10.1063/1.113672

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We have theoretically and experimentally investigated submillimeter-wave receiver performances employing NbN/ALN/NbN tunnel junctions with high current density and high energy. gap. The receiver noise based on parameters for our typical NbN SIS junction were analyzed using Tucker's quantum theory of mixing, which showed that DSB receiver noise temperatures of below 3hv/K B can be achieved by using the NbN SIS junctions for frequencies up to 2 THz. An experimental receiver has been designed and tested for the 1 THz band. The mixer consists of a MgO hyperhemispherical lens with anti-reflection cap, a NbN twin-slot antenna, and NbN tuning circuits. The prepared NbN/A1N/NbN junction size was about 0.5 !mut), and the current density was about 30 kA/cm 2 (o)CJRN = 11 at 1 THz). Although the junctions showed good dc I-V characteristics with a small sub-gap leakage current, the receiver noise temperature measured by the standard Y-factor method was about 2700 K(DSB) at 761 GHz, which is much larger than the theoretical prediction. The relative high noise performance may be caused by the large RF losses in the tuning circuit of polycristalline NbN on the SiO.

•Jan 1, 1997•1 citation
The submillimeter wave frequency responses of NbN/AlN/NbN tunnel junctions have been investigated using quasioptical coupling techniques and an optically pumped far-infrared laser. A two junction array was integrated at the feeds of a bowtie antenna. Measurements on the junctions were made by monitoring photon-assisted tunneling steps induced in the current–voltage characteristics. These n=±1 photon steps were clearly observed with irradiation at 303, 594, 693, and 762 GHz. The results suggest it will be possible to realize submillimeter wave mixers by using these junctions.
We report on the fabrication and properties of high current density NbN/AlN/NbN tunnel junctions for the application of superconducting SIS mixers in the submillimeter wave regions. Junctions having current densities as high as 50 kA/cm/sup 2/ exhibited a good Josephson tunneling behaviour, excellent terahertz response, and sensitive heterodyne mixing properties. Accurate values of junction capacitance were estimated by measuring dc-SQUID resonant steps for the design of tuning circuits. The measured specific capacitance gives values in the range of 20-200 fF//spl mu/m/sup 2/ for the current density range of 1-100 kA/cm/sup 2/. The NbN/AlN/NbN tunnel junctions were integrated with a NbN thin film antenna to investigate the terahertz responses and mixing tests in a quasi-optical testing system. Photon-assisted tunneling steps were clearly observed on the I-V curve with irradiation up to 1.02 THz, and a low-noise heterodyne mixing was demonstrated in the 300-GHz band.
We demonstrate low-noise heterodyne mixing with NbN/AlN/NbN tunnel junctions in the submillimeter-wave region. The prepared junction size was 1 μm in diameter and the current density was about 20 kA/cm2, supplying a small ωCJRN product (ωCJRN=3 at 300 GHz). The mixer used a lens-coupled log-period antenna and an integrated tuning circuit which incorporated a radial short stub tuner for resonating out the junction capacitance. The junctions showed good dc I–V characteristics, excellent submillimeter-wave responses and sensitive heterodyne mixing responses. From 254 to 350 GHz the average receiver noise temperature measured using the standard Y-factor method was about 250 K double sideband (DSB). The lowest receiver noise temperature, 200 K (DSB), was obtained around 303 GHz.
We investigated subharmonic gap structures in the current-voltage (I-V) characteristics of NbN tunnel junctions by observing frequency response using a quasioptical mixer configuration. We chose a 10.5-/spl mu/m-long by 0.6-/spl mu/m-wide junction for the mixer so that the junction behaved as a distributed element at submillimeter-wave frequencies in wideband observations. In the presence of electromagnetic waves, subharmonic photon-assisted tunneling steps with a voltage width of hf/2e could clearly be observed below and above the half-gap voltage in the I-V curves of junctions at measured frequencies from 600 to 950 GHz, where h is Planck's constant, f is frequency, and e is electron charge. This evidence is consistent with a consequence of multiple Andreev reflection at low transmissions or multiparticle tunneling.
We have designed, fabricated and evaluated a quasi-optical SIS receiver with NbN/AlN/NbN tunnel junctions in the submillimeter-wave region. The receiver consists of a planar self-complementary log-periodic antenna and MgO hyperhemispherical lens with an anti-reflection cap for RF optics, NbN SIS junctions and a radial short stub tuner to resonate out its capacitance for RF matching. The prepared NbN SIS junction has a current density of 20 kA/cm/sup 2/ and is about 1 /spl mu/m in diameter, supplying a small /spl omega/C/sub J/R/sub N/ product (/spl omega/C/sub J/R/sub N/=3 at 300 GHz). From 297 to 356 GHz the average double sideband (DSB) receiver noise temperature measured by using the standard Y-factor method was about 200 K. The lowest receiver noise temperature, 167 K (DSB), was obtained at around 303 GHz. These results suggest that our NbN SIS junctions can be used for terahertz mixer elements instead of Nb SIS junctions.
We report on low-noise heterodyne mixing with NbN/A1N/NbN tunnel junctions in the submillimeter-wave region for the first time. The receiver consists of the quasi-optical NbN SIS mixer with an integrated tuning circuit in which a radial short stub tuner is incorporated to resonate out the junction capacitance for RF matching and a balanced IF circuit for broadband IF matching. The prepared NbN SIS junction has a current density of 20 kA/cm 2 and is about 1 I1111 in diameter, supplying a small coC JRN product (o)CJRN = 3 at 300 GHz). The junctions showed good dc I-V characteristics, excellent submillimeter-wave responses and sensitive heterodyne mixing responses. From 254 to 350 GHz the average receiver noise temperature measured using by the standard Y-factor method was about 250 K (DSB) at 5 K. The lowest receiver noise temperature, 200 K (DSB), was obtained at around 303 GHz. Comparing NbN/A1N/NbN and Nb/A10x/Nb tunnel junction performance with the same tuning circuit showed that the frequency dependence of the receiver noise temperature agreed well in the two receivers. These results suggest that our well-controlled NbN SIS junctions can be used for terahertz mixer elements instead of Nb SIS junctions.
We have theoretically and experimentally investigated submillimeter-wave receiver performances employing NbN/ALN/NbN tunnel junctions with high current density and high energy. gap. The receiver noise based on parameters for our typical NbN SIS junction were analyzed using Tucker's quantum theory of mixing, which showed that DSB receiver noise temperatures of below 3hv/K B can be achieved by using the NbN SIS junctions for frequencies up to 2 THz. An experimental receiver has been designed and tested for the 1 THz band. The mixer consists of a MgO hyperhemispherical lens with anti-reflection cap, a NbN twin-slot antenna, and NbN tuning circuits. The prepared NbN/A1N/NbN junction size was about 0.5 !mut), and the current density was about 30 kA/cm 2 (o)CJRN = 11 at 1 THz). Although the junctions showed good dc I-V characteristics with a small sub-gap leakage current, the receiver noise temperature measured by the standard Y-factor method was about 2700 K(DSB) at 761 GHz, which is much larger than the theoretical prediction. The relative high noise performance may be caused by the large RF losses in the tuning circuit of polycristalline NbN on the SiO.