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Applied Physics Letters

Ultrasensitive radio-frequency pseudomorphic high-electron-mobility-transistor readout for quantum devices

Nikolai Oukhanski, Eckhardt Hoenig

Published Oct 4, 2004• 18 citations
Publisher

Abstract

Two versions of a cryogenic multistage pseudomorphic high-electron-mobility field-effect transistor amplifier (based on the AlGaAs/InGaAs/GaAs heterostructure) have been designed for quantum device readout and tested at an ambient temperature ∼380mK. The minimum noise temperature of the first amplifier version is below 110±25mK(∼80±20hf∕kB) at 28.6 MHz, estimated from the noise of input 10 kΩ resistance and coupled input tank circuit with an active resistance at the resonant frequency RS(f0)≈17.9kΩ. Its minimum voltage spectral noise density, with respect to the input, is about 200pV∕(Hz)1∕2 and the corner frequency of the 1∕f noise is close to 300 kHz. For the amplifier with the lowest designed back action, the minimum noise temperature below 130±30mK(∼100±25hf∕kB) at 26.8 MHz was estimated when coupled to an input tank circuit with RS(f0)≈61.8kΩ. The power consumption of the amplifiers is in the range of 100–600 μW.

DOI
10.1063/1.1790598

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Applied Physics Letters•Aug 2, 1999•38 citations
Two versions of a cryogenic multistage pseudomorphic high-electron-mobility field-effect transistor amplifier (based on the AlGaAs/InGaAs/GaAs heterostructure) have been designed for quantum device readout and tested at an ambient temperature ∼380mK. The minimum noise temperature of the first amplifier version is below 110±25mK(∼80±20hf∕kB) at 28.6 MHz, estimated from the noise of input 10 kΩ resistance and coupled input tank circuit with an active resistance at the resonant frequency RS(f0)≈17.9kΩ. Its minimum voltage spectral noise density, with respect to the input, is about 200pV∕(Hz)1∕2 and the corner frequency of the 1∕f noise is close to 300 kHz. For the amplifier with the lowest designed back action, the minimum noise temperature below 130±30mK(∼100±25hf∕kB) at 26.8 MHz was estimated when coupled to an input tank circuit with RS(f0)≈61.8kΩ. The power consumption of the amplifiers is in the range of 100–600 μW.
We demonstrate a radio-frequency parametric amplifier that exploits the gate-tunable quantum capacitance of an ultra high mobility two dimensional electron gas (2DEG) in a GaAs heterostructure at cryogenic temperatures. The prototype narrowband amplifier exhibits a gain greater than 20 dB up to an input power of - 66 dBm (1 dB compression), and a noise temperature TN of 1.3 K at 370 MHz. In contrast to superconducting amplifiers, the quantum capacitance parametric amplifier (QCPA) is operable at tesla-scale magnetic fields and temperatures ranging from milli kelvin to a few kelvin. These attributes, together with its low power (microwatt) operation when compared to conventional transistor amplifiers, suggest the QCPA may find utility in enabling on-chip integrated readout circuits for semiconductor qubits or in the context of space transceivers and radio astronomy instruments.
Large-scale superconducting quantum computers require massive numbers of high-performance cryogenic low-noise amplifiers (cryo-LNAs) for qubit readout. Here we presented a C-band monolithic microwave integrated circuit (MMIC) cryo-LNA for this purpose. This cryo-LNA is based on a 150 nm gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) process and implemented with a three-stage cascaded architecture, where the first stage adopts careful impedance matching to optimize the noise and return loss. The integration of negative feedback loops adopted in the second and third stages enhances the overall stability. Moreover, the pHEMT self-bias and current multiplexing circuitry structure facilitate the reduction of power consumption and require only a single bias line. Operating at an ambient temperature of 3.6 K and consuming 15 mW, the cryo-LNA demonstrates good performance in the C-band, reaching a minimum noise temperature of 4 K and an average gain of 40 dB. We further benchmarked this cryo-LNA with superconducting qubits, achieving an average single-shot dispersive readout fidelity of 98.3% without assistance from a quantum-limited parametric amplifier. The development of GaAs cryo-LNA diversifies technical support necessary for large-scale quantum applications.
We use a cryogenic high-electron-mobility transistor circuit to amplify the current from a single electron transistor, allowing for demonstration of single shot readout of an electron spin on a single P donor in Si with 100 kHz bandwidth and a signal to noise ratio of ∼9. In order to reduce the impact of cable capacitance, the amplifier is located adjacent to the Si sample, at the mixing chamber stage of a dilution refrigerator. For a current gain of ∼2.7×103, the power dissipation of the amplifier is 13 μW, the bandwidth is ∼1.3 MHz, and for frequencies above 300 kHz the current noise referred to input is ≤70 fA/Hz. With this amplification scheme, we are able to observe coherent oscillations of a P donor electron spin in isotopically enriched 28Si with 96% visibility.
Large-scale superconducting quantum computers require massive numbers of high-performance cryogenic low-noise amplifiers (cryo-LNA) for qubit readout. Here we present a C-Band monolithic microwave integrated circuit (MMIC) cryo-LNA for this purpose. This cryo-LNA is based on 150 nm GaAs pseudomorphic high electron mobility transistor (pHEMT) process and implemented with a three-stage cascaded architecture, where the first stage adopts careful impedance match to optimize the noise and return loss. The integration of negative feedback loops adopted in the second and third-stage enhances the overall stability. Moreover, the pHEMT-self bias and current multiplexing circuitry structure facilitate the reduction of power consumption and require only single bias line. Operating at an ambient temperature of 3.6 K and consuming 15 mW, the cryo-LNA demonstrates good performance in the C-band, reaching a 5 K equivalent noise temperature and an average gain of 40 dB. We further benchmark this cryo-LNA with superconducting qubits, achieving an average single-shot dispersive readout fidelity of 98.3% without assistance from a quantum-limited parametric amplifier. The development of GaAs cryo-LNA diversifies technical support necessary for large-scale quantum applications.
The cryogenic indium phosphide (InP) high-electron-mobility transistor (HEMT) low-noise amplifier (LNA) is used for the readout amplification of qubits at444K where cooling capabilities are limited implying that the dc power of the active circuits is an essential design constraint. In this article, the RF and noise performance of the InP HEMT under ultralow-power (ULP) operation at444K has been characterized. The small-signal and noise parameter model of the InP HEMT was extracted down to 1μ\muμW. The tradeoff between noise performance and dc power consumption was analyzed in terms of the drain current and drain voltage. A 4–6 GHz hybrid cryogenic HEMT LNA designed for qubit readout and optimized for lowest noise below111mW dc power consumption was fabricated. The measured performance of the LNA at444K attained 23.1 dB average gain and 2.0 K average noise temperature at 200μ\muμW dc power.
A dc superconducting quantum interference device (SQUID) with a resonant microstrip input and a cooled heterostructure field-effect transistor as a postamplifier is used as a radio-frequency amplifier in the frequency range 90–500 MHz. At liquid He3 temperatures, gains of 24 and 20 dB and intrinsic noise temperatures of 0.06±0.02 and 0.12±0.10 K were achieved at 89.6 and 438 MHz, respectively. The system noise temperature at 438 MHz was also estimated from the Nyquist noise produced by a resonant circuit coupled to the input of the microstrip SQUID.