Observation and analysis of submillimeter-wave radiation (300GHz-3THz) in astronomy and atmospheric sciences requires increasingly performant receivers. The most sensitive receivers working in this range of electromagnetic spectrum use superconductor-insolator-superconductor (SIS) junctions. In order to increase the bandwidth and the sensitivity, we are developing a quantum-noise limited heterodyne receiver based on several parallel SIS junctions with broad (larger than 30%) fixed tuned bandwidth. These circuits can be viewed as passband filters which have been optimized by varying the spacings between junctions. We have designed such 5-junction arrays for operation in the range 480-640 GHz. Fabrication and heterodyne characterization of these devices has been done. The 1 μm2 junctions current density ranges from 4 to 13 kA/cm2, using optical lithography and Nb/Al2Nb5/Nb trilayer sputtering technology. The fabrication process and yield are presented in this paper, along with measured performances
Observation and analysis of submillimeter-wave radiation (300GHz-3THz) in astronomy and atmospheric sciences requires increasingly performant receivers. The most sensitive receivers working in this range of electromagnetic spectrum use superconductor-insolator-superconductor (SIS) junctions. In order to increase the bandwidth and the sensitivity, we are developing a quantum-noise limited heterodyne receiver based on several parallel SIS junctions with broad (larger than 30%) fixed tuned bandwidth. These circuits can be viewed as passband filters which have been optimized by varying the spacings between junctions. We have designed such 5-junction arrays for operation in the range 480-640 GHz. Fabrication and heterodyne characterization of these devices has been done. The 1 μm2 junctions current density ranges from 4 to 13 kA/cm2, using optical lithography and Nb/Al2Nb5/Nb trilayer sputtering technology. The fabrication process and yield are presented in this paper, along with measured performances
The study of submillimeter-wave radiation in astronomy and atmospheric sciences requires increasingly performant receivers, in particular allowing extended spectral line surveys. To this end, we are developing a quantum-noise limited heterodyne receiver based on SIS junction parallel arrays with broad (larger than 30%) fixed tuned bandwidth. Simulations show that networks of junctions (N>2) of micronic size, embedded in a superconducting inicrostrip line, can provide a bandwidth in excess of the ultimate limit for a single or even twin junction device. These circuits can be viewed as passband filters which have been optimized by varying the spacings between junctions. The results of simulations are confirmed by the first heterodyne measurements in the 480-650GHz bandwidth, and by preliminary FTS measurements beyond. The influence of the Josephson effect in these devices is also investigated.
Heterodyne mixers based on superconducting SIS (superconductor-insulator-superconductor) tunnel junctions have been demonstrated to be the most sensitive coherent detectors at millimeter and submillimeter wavelengths. In fact, conventional superconducting SIS mixers with Nb/AlOx/Nb junction and Nb/SiO2/Nb tuning circuit have shown good performances with the noise temperature reaching as low as three times the quantum limit below 0.7THz, which is the gap frequency of Nb-based SIS junctions. However, due to the large loss in Nb thin-film superconducting microstrip lines, the noise performance of Nb SIS mixers deteriorates significantly above 0.7THz. With a gap frequency double that of Nb-based SIS junctions, NbN-based SIS junctions are of particular interest for the development of heterodyne mixers in the terahertz region. Considering the bandwidth and output power of local-oscillator (LO) signal sources are quite limited around 1THz, we firstly develop a waveguide NbN-based SIS mixer at 0.5THz. Three types of SIS junctions, i.e., long junction, parallel-connected tunnel junction (PCTJ) and distributed junction array (DJ) are investigated. They are all comprised of NbN-AlN-NbN tri-layer fabricated on an MgO substrate and have the same current density (Jc) of 10kA/cm2. In this paper, we describe their design, fabrication and preliminary experimental results.
A Superconductor-Insulator-Superconductor (SIS) mixer using parallel array of N junctions have been studied. It has been shown by theoretical analysis that the performance of this type of device is excellent and that nearly quantum-limited performance of the mixer can be obtained. It has been demonstrated that the double sideband (DSB) noise temperature of a receiver employing parallel array of twin junctions, which is the most simplest case in the parallel array of N junctions, was approximately 3 to 5 times as large as the quantum limited photon noise up to the gap frequency of Nb (approximately 700 GHz). It has been also shown that the bandwidth performance of parallel junction arrays can be improved significantly with a large number of SIS junctions even if SIS junctions with a relatively low current density or a large (omega) RNCJ product are adopted in the arrays.
We report on the continuing development of submillimeter quasi-optical slot antenna SIS mixers which use two-junction tuning circuits [1]. The mixers use 10 kA/cm2 Nb/Al-Oxide/Nb junctions and Nb wiring, and have generated DSB receiver noise temperatures around 5hv/kB to 700 GHz, and 16hv/kB (620 K) at 798 GHz. We present Fourier-transform spectrometer (FTS) measurements and heterodyne measurements on several such devices. In general, the measured response at frequencies below the gap of Nb is in good agreement with the predicted performance. Introduction SIS mixers with Nb-trilayer tunnel junctions offer excellent performance at frequencies below 800 GHz, and should perform competitively at frequencies as high as 1.4 THz [2-5]. Our goal is to develop a suite of ultra-low-noise SIS mixers which cover frequencies from = 400 GHz to more than I THz. At frequencies below the Nb gap (< 700 GHz), existing devices perform quite well [6], but further improvements in noise temperatures remain important. In addition, it is quite useful to be able to predict device performance given the design parameters. One can then optimize the device design for a particular frequency band, and confirm that we indeed understand the physics of the device. Progress in the design and operation of devices in this frequency range is presented below. At frequencies above the Nb gap, RF photons can break Cooper pairs, resulting in greater signal loss and higher receiver noise temperatures. The loss is particularly important in the slender microstrip lines used to resonate the junction capacitance and to transform the antenna impedance down to the RF junction impedance. However, the actual coupling of radiation into Nb junctions above the gap should still be reasonably efficient -more than 30% at 800 GHz [7]. In addition to RF loss, one is also affected by increased dispersion at frequencies near the gap. The Nb microstriplines have therefore been carefully designed to ensure the desired bandpass is achieved. We demonstrate for the first time that all-Nb SIS receivers can have substantially better performance than GaAs Schottky receivers for the astronomically important CI ( P2 — P 1 ) and CO (7-6) transitions near 810 GHz. Receiver Configuration Since waveguide mixers become difficult to construct at short submillimeter wavelengths, we have adopted a quasi-optical approach. Here, lenses take the place of waveguide horns, and the incoming radiation is collected by a planar antenna on the SIS mixer substrate [8]. This offers several other advantages, such as on-chip broad-band silt a SS 114 SSE WA Wa Sta MX Dewar 120 Mylar Window SIS Mixer 295 IQ 77 K Mylar Load Bearnsplitter ICI 1= NZ IC =1 HEN1T Amplifier Polyethylene Lens
This thesis describes the development of low-noise heterodyne receivers at THz frequencies for submillimeter astronomy using Nb-based superconductor-insulator-superconductor (SIS) tunneling junctions. The mixers utilize a quasi-optical configuration which consists of a planar twin-slot antenna and antisymmetrically-fed two-junctions on an antireflection-coated silicon hyperhemispherical lens. On-chip integrated tuning circuits, in the form of microstrip lines, are used to obtain maximum coupling efficiency in the designed frequency band. To reduce the rf losses in the integrated tuning circuits above the superconducting Nb gap frequency (~ 700 GHz), normal-metal Al is used to replace Nb as the tuning circuits. To account the rf losses in the micros trip lines, we calculated the surface impedance of the AI films using the nonlocal anomalous skin effect for finite thickness films. Nb films were calculated using the Mattis-Bardeen theory in the extreme anomalous limit. Our calculations show that the losses of the Al and Nb microstrip lines are about equal at 830 GHz. For Al-wiring and Nb-wiring mixers both optimized at 1050 GHz, the RF coupling efficiency of Al-wiring mixer is higher than that of Nb-wiring one by almost 50%. We have designed both Nb-wiring and Al-wiring mixers below and above the gap frequency. A Fourier transform spectrometer (FTS) has been constructed especially for the study of the frequency response of SIS receivers. This FTS features large aperture size (10 inch) and high frequency resolution (114 MHz). The FTS spectra, obtained using the SIS receivers as direct detectors on the FTS, agree quite well with our theoretical simulations. We have also, for the first time, measured the FTS heterodyne response of an SIS mixer at sufficiently high resolution to resolve the LO and the sidebands. Heterodyne measurements of our SIS receivers with Nb-wiring or Al-wiring have yielded results which arc among the best reported to date for broadband heterodyne receivers. The Nb-wiring mixers, covering 400 - 850 GHz band with four separate fixed-tuned mixers, have uncorrected DSB receiver noise temperature around 5hv/kb to 700 GHz, and better than 540 K at 808 GHz. An Al-wiring mixer designed for 1050 GHz band has an uncorrected DSB receiver noise temperature 840 K at 1042 GHz and 2.5 K bath temperature. Mixer performance analysis shows that Nb junctions can work well up to twice the gap frequency and the major cause of loss above the gap frequency is the rf losses in the microstrip tuning structures. Further advances in THz SIS mixers may be possible using circuits fabricated with higher-gap superconductors such as NbN. However, this will require high-quality films with low RF surface resistance at THz frequencies.
The most sensitive heterodyne receivers used formillimeter wave and submillimeter wave radioastronomyemploy superconductor-insulator-superconductor (SIS)tunnel junctions as the nonlinear mixing element. Goodperformance has recently been reported for SIS junctionsused in planar mixer circuits and waveguide mixers fromabout 300 GHz to 500 GHz. We have developed asubmillimeter wave SIS heterodyne receiver for observingimportant rotational transitions of molecules in theinterstellar medium near 550 GHz and 630 GHz. Thisreceiver is based on a waveguide mixer with an adjustablebackshort and E-plane tuner [1]. The mixer uses a highcurrent density, 0.25 gm2 Nb-A1Ox-Nb tunnel junctiondefined by electron beam lithography [2]. The capacitanceof the junction is compensated with an integrated RFsuperconductive microstrip tuning circuit. The receiverperformance has been measured over the frequency range460 GHz to 640 GHz. DSB receiver noise temperatures aslow as 200 ± 17 K at 540 GHz and 362 ± 33 K at626 GHz have been obtained. In addition, negativedifferential resistance has been observed in the DC I-Vcurve at frequencies around 491 GHz. These results indicatethat the superconductive Nb microstrip transmission linesused in the tuning circuits are low-loss and perform well upto at least 90% of the superconductor energy gap frequency.