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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Bloch oscillating transistor as the readout element for hot electron bolometers

Juha Hassel, Heikki Seppä, Rene K. Lindell, Pertti Juhani Hakonen

Published Oct 8, 2004• 1 citation
Publisher

Abstract

In this paper we analyse the properties of the Bloch oscillating transistor as a preamplifier in cryogenic devices. We consider here especially the readout of hot electron bolometers (HEBs) based on Normal-Superconductor-Insulator tunnel junctions, but the results also apply more generally. We show that one can get an equivalent noise voltage below 1 nV/&sqrt;Hz with a single BOT. By using N BOTs in a parallel array configuration, a further reduction by factor &sqrt;N may be achieved.

DOI
10.1117/12.554888

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A capacitively coupled hot-electron nanobolometer (CC-HEB) is the simplest and most effective antenna-coupled bolometer. The bolometer consists of a small absorber connected to the superconducting antenna by tunnel junctions. The tunnel junctions used for high-frequency coupling also give perfect thermal isolation of hot electrons in the small volume of the absorber. The same tunnel junctions are used for temperature measurements and electron cooling. This bolometer does not suffer from the frequency limitations in the submillimeter range due to the high potential barrier of the tunnel junctions as does the microbolometer with Andreev mirrors (A-HEB), which is limited by the superconducting gap. Theoretical analyses show that the two-junction configuration more than doubles the sensitivity of the bolometer in current-biased mode compared to the single-junction configuration used for A-HEB. Another important advantage of CC-HEB is its simple two-layer technology for sample fabrication. Samples were fabricated with an absorber made of a bilayer of Cr and Al to match the impedance of the antenna. Electrodes were made of Al and tunnel junctions were formed over the Al oxide layer. The coupling capacitances of the tunnel junctions, C ≈ 20 fF, in combination with the inductance of the 10 μm absorber create a bandpass filter with a central frequency around 300 GHz. Bolometers are integrated with log-periodic and double-dipole planar antennas made of Au. The temperature response of bolometer structures was measured at temperatures down to 256 mK. In our experiment we observed dV/dT=1.3 mV/K, corresponding to responsivity S=0.2.109 V/W. For amplifier noise Vna=3nV/Hz1/2 at 1 kHz the estimated total noise equivalent power is NEP=1.5.10-17 W/Hz1/2. The intrinsic bolometer self noise Vnbol=0.5 nV/Hz1/2 corresponds to NEP=3.10-18 W/Hz1/2. For microwave evaluation of bolometer sensitivity we used a black body radiation source comprising a thin NiCr stimulator placed on the cold plate of cryostat in front of a CC-HEB attached to an extended hemisphere sapphire lens. This measurements were consistent with estimates based on the dc responsivity of the bolometer.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Feb 1, 2003•6 citations
In this paper we analyse the properties of the Bloch oscillating transistor as a preamplifier in cryogenic devices. We consider here especially the readout of hot electron bolometers (HEBs) based on Normal-Superconductor-Insulator tunnel junctions, but the results also apply more generally. We show that one can get an equivalent noise voltage below 1 nV/&sqrt;Hz with a single BOT. By using N BOTs in a parallel array configuration, a further reduction by factor &sqrt;N may be achieved.
The Bloch oscillating transistor (BOT) is a device in which single electron current through a normal tunnel junction enhances Cooper pair current in a mesoscopic Josephson junction, leading to signal amplification. In this article we develop a theory in which the BOT dynamics is described as a two-level system. The theory is used to predict current–voltage characteristics and small-signal response. The transition from stable operation into the hysteretic regime is studied. By identifying the two-level switching noise as the main source of fluctuations, the expressions for equivalent noise sources and the noise temperature are derived. The validity of the model is tested by comparing the results with simulations and experiments.
A novel concept of the parallel/series array of Cold-Electron Bolometers (CEB) with Superconductor-Insulator-Normal (SIN) Tunnel Junctions has been proposed for matching with JFET readout. The current-biased CEBs are connected in series for DC and in parallel for HF signal. A signal is concentrated to the absorber through the capacitance of tunnel junctions and additional capacitance for coupling of superconducting islands. Due to dividing power between CEBs in the array and increasing responsivity, the noise matching could be effectively optimized and the photon Noise Equivalent Power could be easily achieved at 300 mK with a room temperature JFET readout.
The superconducting HEB device is so far the most promising low noise mixer in the THz frequency range. It out-performs other existing receiver systems because it has low noise temperature and sufficient bandwidth for applications in the FIR range such as astronomy, remote sensing and plasma diagnostics. This work investigates the linear and nonlinear characteristics of NbN Hot Electron Bolometer (HEB) devices. First of all, a thorough expression of the Johnson noise and the thermal fluctuation noise has been re-derived. Our circuit model is more preferable for the HEB devices than the traditional one being used for the semiconductor bolometer. Secondly, the equivalent noise temperature of our receiver system has been significantly improved: the noise temperature went from the original 5800K to a record of 500K for silicon substrate devices. We are also getting improved noise performance for the new MgO substrate devices. The simulation results agree with the measured data very well around the optimum operating point. Finally, the device in the unstable region can be stabilized by connecting a series resistor with higher resistance than the negative resistance of the device. Two frequencies are related to the oscillation waveforms of the voltage and the current of the device. The first one is the repetition frequency that is actually related to the external circuit. The second one is the relaxation frequency that is related to the intrinsic phenomena of the device itself. The domain wall velocity and the relaxation oscillation frequency have been calculated both theoretically and experimentally. The calculated results are within a satisfactory range compared with the measured data. Also, a thorough explanation of the device oscillation process has been presented.
Hot-electron bolometer (HEB) mixers are used in many low noise heterodyne radio astronomical receivers. Their noise temperature is at the level of 10–15 times the quantum limit, and their gain bandwidth is from 2 GHz to slightly more than 5 GHz depending on the type of substrate material used for a device fabrication. The HEB mixers presented in this Letter are a complex multilayer thin-film structure containing an ultra-thin superconducting film of NbN as a detecting element, and a thick normal metal layer as an antenna structure. The overall performance of the device has been improved by optimisation of the HEB mixer fabrication steps starting with ultra-thin NbN films, followed by NbN/Au bi-layers for antenna structures. Patterning was achieved using electron-beam lithography and lift-off processes. The noise temperature of the HEB mixer fabricated with the improved technology is about 800 K, as measured in a cryogenic-free system with a quantum cascade laser as a local oscillator.
For sensitive wideband spectroscopy at THz frequencies with performance better than for Fourier Transform Spectrometer, one needs a wide-range electrically tunable, narrow linewidth THz source, and a sensitive broadband detector. To obtain a low noise level of sensor we use a superconducting normal metal cold electron bolometer (CEB). A voltage response of the bolometer is 4.108 V/W and an amplifier-limited technical noise equivalent power of the bolometer is 1.25.10-17 W/Hz1/2. The wide band electrically tuned terahertz band cryogenic oscillator is a Josephson junction. Contrary to conventional Josephson junctions based on niobium, and naturally limited in frequency by energy gap of about 700 GHz, the high critical temperature YBaCuO junctions can extend this limit by an order of magnitude. At 4 K such oscillators can radiate at frequencies exceeding 2 THz. Signals received by bolometers integrated with double-dipole and log-periodic antennas and irradiated by the Josephson oscillator show in our experiments the high frequency response corresponding to an oscillation frequency of up to 1.75 THz. Such cryogenic terahertz network analyzer is suitable for low-signal spectral evaluation of cryogenic detectors, quasioptical sub-mm cryogenic filters, planar antennas with planar microwave filters, integrated structures comprising such elements, and arrays of cryogenic receivers.
A capacitively coupled hot-electron nanobolometer (CC-HEB) is the simplest and most effective antenna-coupled bolometer. The bolometer consists of a small absorber connected to the superconducting antenna by tunnel junctions. The tunnel junctions used for high-frequency coupling also give perfect thermal isolation of hot electrons in the small volume of the absorber. The same tunnel junctions are used for temperature measurements and electron cooling. This bolometer does not suffer from the frequency limitations in the submillimeter range due to the high potential barrier of the tunnel junctions as does the microbolometer with Andreev mirrors (A-HEB), which is limited by the superconducting gap. Theoretical analyses show that the two-junction configuration more than doubles the sensitivity of the bolometer in current-biased mode compared to the single-junction configuration used for A-HEB. Another important advantage of CC-HEB is its simple two-layer technology for sample fabrication. Samples were fabricated with an absorber made of a bilayer of Cr and Al to match the impedance of the antenna. Electrodes were made of Al and tunnel junctions were formed over the Al oxide layer. The coupling capacitances of the tunnel junctions, C ≈ 20 fF, in combination with the inductance of the 10 μm absorber create a bandpass filter with a central frequency around 300 GHz. Bolometers are integrated with log-periodic and double-dipole planar antennas made of Au. The temperature response of bolometer structures was measured at temperatures down to 256 mK. In our experiment we observed dV/dT=1.3 mV/K, corresponding to responsivity S=0.2.109 V/W. For amplifier noise Vna=3nV/Hz1/2 at 1 kHz the estimated total noise equivalent power is NEP=1.5.10-17 W/Hz1/2. The intrinsic bolometer self noise Vnbol=0.5 nV/Hz1/2 corresponds to NEP=3.10-18 W/Hz1/2. For microwave evaluation of bolometer sensitivity we used a black body radiation source comprising a thin NiCr stimulator placed on the cold plate of cryostat in front of a CC-HEB attached to an extended hemisphere sapphire lens. This measurements were consistent with estimates based on the dc responsivity of the bolometer.