Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Physical review. B, Condensed matter

Gap formation and phase diagram of the disordered Hubbard model in the alloy-analogy approximation

D. Domi ́nguez, Cristina Wiecko

Published Apr 15, 1993• 3 citations
Publisher

Abstract

We study the gap for one-particle excitations as a function of the on-site repulsion U and the disorder W in the disordered Hubbard model in two and three dimensions. We consider the half-filled band case in the paramagnetic phase of this model. The analysis is done within the alloy-analogy approximation using the localized-eigenstates approximation to calculate the density of states. We find that there is a critical ${\mathit{U}}_{\mathit{c}}$ for a gap opening at the Fermi level in both two and three dimensions. This allows us to determine a phase diagram of the model that separates a Mott-Hubbard insulating phase and an unspecified gapless phase. The critical ${\mathit{U}}_{\mathit{c}}$ line grows with disorder and tends to be linear for large enough W. Our results are consistent with previous real-space renormalization-group studies.

DOI
10.1103/physrevb.47.10888

Related papers

Phase diagram of the half-filled Hubbard chain with next-nearest-neighbor hopping

S. Daul, R. M. Noack

We investigate the ground-state phase diagram of the half-filled one-dimensional Hubbard model with next-nearest-neighbor hopping using the density-matrix renormalization-group technique as well as an unrestricted Hartree-Fock approximation. We find commensurate and incommensurate disordered magnetic insulating phases and a spin-gapped metallic phase in addition to the one-dimensional Heisenberg phase. At large on-site Coulomb repulsion U, we make contact with the phase diagram of the frustrated Heisenberg chain, which has spin-gapped phases for sufficiently large frustration. For weak U, sufficiently large next-nearest-neighbor hopping ${t}_{2}$ leads to a band structure with four Fermi points rather than two, producing a spin-gapped metallic phase. As U is increased in this regime, the system undergoes a Mott-Hubbard transition to a frustrated antiferromagnetic insulator.

arXiv:cond-mat/9907256•Physical review. B, Condensed matter•Jan 15, 2000•53 citations

Phase diagram of the two-dimensional Anderson-Hubbard model

Jaichul Yi, Lizeng Zhang, Geoffrey Canright

We study the ground state of the two-dimensional Anderson-Hubbard model using a quantum real space renormalization group method. We obtain the phase diagram near half filling. The system is always insulating with disorder. At half filling, the system undergoes a transition from a gapless (Anderson) insulator to an incompressible (Mott-Hubbard) insulator as the interaction U reaches a critical value ${\mathit{U}}_{\mathit{c}}$. Away from half filling, the insulating phase is always gapless and is found to be controlled by the Anderson fixed point at half filling. This result is similar to that obtained in the corresponding one-dimensional system and suggests strongly the importance of the electron-electron correlation in this gapless insulating phase.

Physical review. B, Condensed matter•Jun 1, 1994•9 citations

Ground-State Phase Diagram of a Half-Filled One-Dimensional Extended Hubbard Model

Eric Jeckelmann

The density-matrix renormalization group is used to study the phase diagram of the one-dimensional half-filled Hubbard model with on-site (U) and nearest-neighbor (V) repulsion and hopping t. A critical line V(c)(U) approximately U/2 separates a Mott insulating phase from a charge-density-wave phase. The formation of bound charge excitations for V>2t changes the phase transition from continuous to first-order at a tricritical point U(t) approximately 3.7t, V(t)=2t. A frustrating effective antiferromagnetic spin coupling induces a bond-order-wave phase on the critical line V(c)(U) for U(t)<U less, similar 7t.

arXiv:cond-mat/0204244•Physical Review Letters•Nov 15, 2002•133 citations

Phase Diagram of the Two-Dimensional Anderson-Hubbard Model

Jaichul Yi Lizeng Zhang, Geoffrey Canright

We study the ground state of the two-dimensional Anderson-Hubbard model using a quantum real space renormalization group method. We obtain the phase diagram near half filling. The system is always insulating with disorder. At half filling, the system undergoes a transition from a gapless (Anderson) insulator to an incompressible (Mott-Hubbard) insulator as the interaction $U$ reaches a critical value $U_c$. Away from half filling, the insulating phase is always gapless and is found to be controlled by the Anderson fixed point at half filling. This result is similar to that obtained in the corresponding one dimensional system and suggests strongly the importance of the electron-electron correlation in this gapless insulating phase.

arXiv:cond-mat/9403002•Mar 1, 1994•0 citations

Scaling theory for Mott–Hubbard transitions: I. T = 0 phase diagram of the 1/2-filled Hubbard model

Anirban Mukherjee, Siddhartha Lal

Abstract We present a T = 0 K renormalization group (RG) phase diagram for the electronic Hubbard model in two dimensions on the square lattice at half filling. The RG procedure treats quantum fluctuations in the single particle occupation number nonperturbatively via the unitarily decoupling of one electronic state at every RG step. The resulting phase diagram thus possesses the quantum fluctuation energy scale (ω) as one of its axes. A relation is derived between ω and the effective temperature scale upto which gapless, as well as emergent gapped phases can be obtained. We find that the normal and insulating phases of the half-filled Hubbard model correspond, for any on-site repulsion, to a marginal Fermi liquid normal phase and a topologically-ordered gapped Mott insulating liquid respectively. The marginal Fermi liquid is found to arise from singular forward scattering in directions normal to the nested Fermi surface, while singular backscattering events lead to Mott liquid state. The transition between these two phases involves passage through a pseudogapped phase bookended by Fermi surface topology-changing Lifshitz transitions. The pseudogap phase is observed to arise from the electronic differentiation encoded within the nested Fermi surface, and involves the gradual gapping of the Fermi surface from antinodes to nodes via charge and spin excitations that are mutually entangled. We obtain effective Hamiltonians for various phases, as well as wavefunctions for the low-energy many-body eigenstates of the Mott liquid. Benchmarking of the ground-state energy per particle and the double-occupancy fraction for the Mott liquid against existing numerical results yields excellent agreement. Presence of a Néel ordering symmetry-breaking perturbation in the RG leads to an antiferromagnetic spin-ordered charge insulating Mott state. Our results thus offer novel insights on a variety of aspects of the Mott–Hubbard problem, and can be extended to the doped system.

New Journal of Physics•Apr 9, 2020•17 citations

Disorder and interactions in the Hubbard model

Gergely T. Zimányi, Elihu Abrahams

We investigate the single-band Hubbard model with random site energies in the strong-repulsion limit, as represented by the slave-boson formulation of the t-J model. It is essential to include the correlations between the slave-boson mean field and the disorder. This leads to the widening of the non-Fermi-liquid (``generalized Mott insulating'') region around half filling. In the Fermi-liquid regime we apply the renormalization-group method. The resulting phase diagram has superconducting, magnetic, and insulating phases. The disorder generally suppresses superconductivity and gives rise to the formation of localized magnetic moments.

Physical Review Letters•May 28, 1990•44 citations
We study the gap for one-particle excitations as a function of the on-site repulsion U and the disorder W in the disordered Hubbard model in two and three dimensions. We consider the half-filled band case in the paramagnetic phase of this model. The analysis is done within the alloy-analogy approximation using the localized-eigenstates approximation to calculate the density of states. We find that there is a critical Uc{\mathit{U}}_{\mathit{c}}Uc​ for a gap opening at the Fermi level in both two and three dimensions. This allows us to determine a phase diagram of the model that separates a Mott-Hubbard insulating phase and an unspecified gapless phase. The critical Uc{\mathit{U}}_{\mathit{c}}Uc​ line grows with disorder and tends to be linear for large enough W. Our results are consistent with previous real-space renormalization-group studies.
We investigate the ground-state phase diagram of the half-filled one-dimensional Hubbard model with next-nearest-neighbor hopping using the density-matrix renormalization-group technique as well as an unrestricted Hartree-Fock approximation. We find commensurate and incommensurate disordered magnetic insulating phases and a spin-gapped metallic phase in addition to the one-dimensional Heisenberg phase. At large on-site Coulomb repulsion U, we make contact with the phase diagram of the frustrated Heisenberg chain, which has spin-gapped phases for sufficiently large frustration. For weak U, sufficiently large next-nearest-neighbor hopping t2{t}_{2}t2​ leads to a band structure with four Fermi points rather than two, producing a spin-gapped metallic phase. As U is increased in this regime, the system undergoes a Mott-Hubbard transition to a frustrated antiferromagnetic insulator.
We study the ground state of the two-dimensional Anderson-Hubbard model using a quantum real space renormalization group method. We obtain the phase diagram near half filling. The system is always insulating with disorder. At half filling, the system undergoes a transition from a gapless (Anderson) insulator to an incompressible (Mott-Hubbard) insulator as the interaction U reaches a critical value Uc{\mathit{U}}_{\mathit{c}}Uc​. Away from half filling, the insulating phase is always gapless and is found to be controlled by the Anderson fixed point at half filling. This result is similar to that obtained in the corresponding one-dimensional system and suggests strongly the importance of the electron-electron correlation in this gapless insulating phase.
The density-matrix renormalization group is used to study the phase diagram of the one-dimensional half-filled Hubbard model with on-site (U) and nearest-neighbor (V) repulsion and hopping t. A critical line V(c)(U) approximately U/2 separates a Mott insulating phase from a charge-density-wave phase. The formation of bound charge excitations for V>2t changes the phase transition from continuous to first-order at a tricritical point U(t) approximately 3.7t, V(t)=2t. A frustrating effective antiferromagnetic spin coupling induces a bond-order-wave phase on the critical line V(c)(U) for U(t)<U less, similar 7t.
We study the ground state of the two-dimensional Anderson-Hubbard model using a quantum real space renormalization group method. We obtain the phase diagram near half filling. The system is always insulating with disorder. At half filling, the system undergoes a transition from a gapless (Anderson) insulator to an incompressible (Mott-Hubbard) insulator as the interaction UUU reaches a critical value UcU_cUc​. Away from half filling, the insulating phase is always gapless and is found to be controlled by the Anderson fixed point at half filling. This result is similar to that obtained in the corresponding one dimensional system and suggests strongly the importance of the electron-electron correlation in this gapless insulating phase.
Abstract We present a T = 0 K renormalization group (RG) phase diagram for the electronic Hubbard model in two dimensions on the square lattice at half filling. The RG procedure treats quantum fluctuations in the single particle occupation number nonperturbatively via the unitarily decoupling of one electronic state at every RG step. The resulting phase diagram thus possesses the quantum fluctuation energy scale (ω) as one of its axes. A relation is derived between ω and the effective temperature scale upto which gapless, as well as emergent gapped phases can be obtained. We find that the normal and insulating phases of the half-filled Hubbard model correspond, for any on-site repulsion, to a marginal Fermi liquid normal phase and a topologically-ordered gapped Mott insulating liquid respectively. The marginal Fermi liquid is found to arise from singular forward scattering in directions normal to the nested Fermi surface, while singular backscattering events lead to Mott liquid state. The transition between these two phases involves passage through a pseudogapped phase bookended by Fermi surface topology-changing Lifshitz transitions. The pseudogap phase is observed to arise from the electronic differentiation encoded within the nested Fermi surface, and involves the gradual gapping of the Fermi surface from antinodes to nodes via charge and spin excitations that are mutually entangled. We obtain effective Hamiltonians for various phases, as well as wavefunctions for the low-energy many-body eigenstates of the Mott liquid. Benchmarking of the ground-state energy per particle and the double-occupancy fraction for the Mott liquid against existing numerical results yields excellent agreement. Presence of a Néel ordering symmetry-breaking perturbation in the RG leads to an antiferromagnetic spin-ordered charge insulating Mott state. Our results thus offer novel insights on a variety of aspects of the Mott–Hubbard problem, and can be extended to the doped system.
We investigate the single-band Hubbard model with random site energies in the strong-repulsion limit, as represented by the slave-boson formulation of the t-J model. It is essential to include the correlations between the slave-boson mean field and the disorder. This leads to the widening of the non-Fermi-liquid (``generalized Mott insulating'') region around half filling. In the Fermi-liquid regime we apply the renormalization-group method. The resulting phase diagram has superconducting, magnetic, and insulating phases. The disorder generally suppresses superconductivity and gives rise to the formation of localized magnetic moments.