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IBM Journal of Research and Development

Analysis of a Nondegenerate Two-Photon Giant-Pulse Laser

Richard L. Garwin

Published Jul 1, 1964• 23 citations
Publisher

Abstract

In a recent article1to which we shall refer as [S&B], a two-photon laser was proposed and analyzed. This device consists of a cavity resonant at frequency vAand containing ions of type B with an inverted population NB/V between levels separated by an energy difference hvBsuch that vB= 2vA; it is necessary that the system not lase at vB, which criterion can be satisfied by low reflectivity of the cavity at frequency vB, by strong parasitic absorption in the laser material near frequency vB, or preferably by a choice of ion such that the transition vBis highly forbidden to a single-quantum process. The authors of [S&B] thus show that a certain priming density of photons of frequency vAwill provoke the simultaneous emission from the inverted population NBof pairs of photons vAat a rate exceeding the cavity loss,t he process diverging until the population inversion is eliminated.

DOI
10.1147/rd.83.0338

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In a recent article1to which we shall refer as [S&B], a two-photon laser was proposed and analyzed. This device consists of a cavity resonant at frequency vAand containing ions of type B with an inverted population NB/V between levels separated by an energy difference hvBsuch that vB= 2vA; it is necessary that the system not lase at vB, which criterion can be satisfied by low reflectivity of the cavity at frequency vB, by strong parasitic absorption in the laser material near frequency vB, or preferably by a choice of ion such that the transition vBis highly forbidden to a single-quantum process. The authors of [S&B] thus show that a certain priming density of photons of frequency vAwill provoke the simultaneous emission from the inverted population NBof pairs of photons vAat a rate exceeding the cavity loss,t he process diverging until the population inversion is eliminated.
Two-photon lasers and laser amplifiers are studied by using the rate equations. The steady solution is obtained and its stability is analyzed. The time evolution of large deviation from the steady solution is studied by using computer simulation. The population inversion and the trigger input must exceed certain thresholds to operate a two-photon laser. The method for producing giant pulse is discussed. The possibility of building a practical two-photon laser is analyzed based on the known data. A Doppler-free two-photon laser needs much lower threshold but much more serious frequency matching among the atom system, cavity, and the trigger input. Such a Doppler-free two-photon laser could find applications in laser spectroscopy and in the accurate metrology. Two-photon laser amplifiers distort the input waveform seriously. This distortion depends strongly on the input intensity.
Two-photon lasers and laser amplifiers are studied by using the rate equations. The steady solution is obtained and its stability is analysed. The time evolution of large deviation from the steady solution is studied by using computer simulation. The population inversion and the trigger input must exceed certain thresholds to operate a two-photon laser. The method for producing giant-pulse is discussed. The possibility of building a pratical two-photon laser is analysed basing on the known data. A Doppler-i'ree two-photon laser needs much lower threshold but much more serious frequency matching among the atom system, cavity and the trigger input. Such a Doppler-free two-photon laser could find applications in laser spectroscopy and in the accurate metrology. Two-photon laser amplifiers distort the input waveform seriously. This distortion depends strongly on the input intensity.
We describe all-optical transistor action in photonic bandgap (PBG) materials doped with active atoms and analyse the advantages of this system over other all-optical transistor proposals. In the presence of a PBG material, a coherent laser beam with the frequency slightly detuned from the resonant atomic transition frequency can drive a collection of two-level atoms to an almost totally inverted state, a phenomenon strictly forbidden in ordinary vacuum. By varying the laser field intensity in the neighbourhood of a threshold value, it is possible to drive the atomic system through a transition from states in which the atoms populate preferentially the ground level to almost totally inverted states. In this process, the atomic system switches from a passive medium (highly absorptive) to a active medium (highly amplifying). The large differential gain exhibited by the atomic medium is very robust with respect to nonradiative relaxation and dephasing mechanisms. The switching action in a PBG material is not associated with operation near a narrow cavity resonance with conventional trade-off between switching time and switching threshold intensity. Rather it is associated with an abrupt discontinuity in the engineered broad-band electromagnetic density of states of the PBG material. We demonstrate all-optical transistor action in PBG materials by analysing the absorption spectrum of a second probe laser beam and we show that the probe beam experiences a substantial differential gain by slight intensity modulations in the control laser field. Under certain conditions, the fluctuations in the number of totally inverted atoms that contribute to the amplification process are strongly diminished (the statistics of the excited atoms becomes sub-Poissonian), which, in turn, determines a very low-noise regime of amplification.
We describe all-optical transistor action in photonic band gap materials doped with active atoms. In the presence of a photonic band gap (PBG) material, a coherent laser beam with the frequency slightly detuned from the resonant atomic transition frequency can drive a collection of two-level atoms to an almost totally inverted state, a phenomenon strictly forbidden in ordinary vacuum. By changing the laser field intensity in the neighborhood of a threshold value, it is possible to drive the atomic system through a transition from states in which the atoms populate preferentially the ground level to almost totally inverted states. In this process, the atomic system switches from a passive medium (highly absorptive) to a active medium (highly amplifying). The switching action in a PBG material is not associated with operating near a narrow cavity resonance with conventional trade-off between switching time and switching threshold intensity. Rather it is associated with an abrupt discontinuity in the engineered broad band electromagnetic density of states of the PBG material. We demonstrate all-optical transistor action in PBG materials by analyzing the absorption spectrum of a second probe laser beam and we show that the probe beam experience a substantial differential gain by slight intensity modulations in the control laser field.