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Solvay Conference on Physics

ON PHONON MEDIATED DECOHERENCE OF ORBITAL DEGREES OF FREEDOM IN QUANTUM DOT

Lucjan Jacak, J. Krasnyj, Dorota Jacak, Paweł Machnikowski

Published Aug 1, 2003• 0 citations
Publisher
DOI
10.1142/9789812704634_0008

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The effect induced by an environment on a composite quantum system is studied. The model considers the composite system as comprised by a subsystem A coupled to a subsystem B which is also coupled to an external environment. We studied all possible four combinations of subsystems A and B made up with a harmonic oscillator and an upside down oscillator. We analyzed the decoherence suffered by subsystem A due to an effective environment composed by subsystem B and the external reservoir. In all the cases we found that subsystem A decoheres even though it interacts with the environment only through its sole coupling to B. However, the effectiveness of the diffusion depends on the unstable nature of subsystem A and B. Therefore, the role of this degree of freedom in the effective environment is analyzed in detail.
We study the eigenenergies and the eigenfunctions of the ground and the first excited states of an electron, which is strongly coupled to the LO-phonon in a quantum dot with triangular bound potential by using the Pekar variational method. This system may be used as a two-level qubit. Our numerical results indicate that the decoherence rate will decrease with increasing the confinement length of the quantum dot (QD) and decrease with increasing electron-LO-phonon coupling constant. The influences of the polar angle on the decoherence rate are dominant when the coupling constant increases, while the effects of the polar angle on that are strong when the confinement length increases. Meanwhile, the decoherence rate varies periodically with respect to the polar angle.
This Chapter contains a review of the recent results, both experimental and theoretical, related to optical control of carriers confined in semiconductor quantum dots. The physics of Rabi oscillations of exciton and biexciton occupations, as well as time-domain interference experiments are discussed. Next, the impact of carrier--phonon interaction in a semiconductor structure is described and modern methods of theoretical description of the carrier--phonon kinetics and of the resulting dephasing are presented.