Physical Review B
Binding of charge carriers in the extended t−J model
J. M. Tipper, C. Genert, K. J. E. Vos
Abstract
We have examined the effects of extended hopping parameters in the $t\text{\ensuremath{-}}{t}^{\ensuremath{'}}\text{\ensuremath{-}}{t}^{\ensuremath{''}}\text{\ensuremath{-}}J$ model on the binding and spatial distribution of charge carriers. Previous studies have shown that a negative next-nearest-neighbor hopping in the physical parameter range serves to weaken striped behavior in the model. We show using exact diagonalization that a physically relevant set of parameters for the hole doped cuprates that includes next-next-nearest-neighbor hopping strengthens the binding of the holes and enhances stripe behavior in the underdoped regime.