A quantum interference transistor that can be fabricated by available technology and can operate at room temperature is proposed. This device uses the phase interference effect of a vacuum electron that is not influenced by thermal fluctuations, in contrast to an electron in solid-state materials. The device consists of a field emitter, a collector, and segmented capacitors between the emitter and the collector. The capacitors control electron trajectories and the phase interference of the electron in vacuum by their electrical potential. This quantum interference effect is found not to be the same as the Aharonov–Bohm effect contrary to our expectations. We are convinced that the new transistor is capable of room-temperature operation because the large kinetic energy of the electron in vacuum suppresses energy fluctuations caused by the field emission itself and by thermal fluctuations in the emitter material to about 50 meV. The switching time of the transistor is limited in order to average the number of electrons at the collector to allow the emitter-collector current to be a deterministic variable against the quantum stochastic property. The threshold of the switching time is estimated to be of the order of magnitude of 10−11 s for the field emitter reported by C. A. Spindt, I. Brodie, L. Hummphrey, and E. R. Westerberg [J. Appl. Phys. 47, 5248 (1976)].
A quantum interference transistor that can be fabricated by available technology and can operate at room temperature is proposed. This device uses the phase interference effect of a vacuum electron that is not influenced by thermal fluctuations, in contrast to an electron in solid-state materials. The device consists of a field emitter, a collector, and segmented capacitors between the emitter and the collector. The capacitors control electron trajectories and the phase interference of the electron in vacuum by their electrical potential. This quantum interference effect is found not to be the same as the Aharonov–Bohm effect contrary to our expectations. We are convinced that the new transistor is capable of room-temperature operation because the large kinetic energy of the electron in vacuum suppresses energy fluctuations caused by the field emission itself and by thermal fluctuations in the emitter material to about 50 meV. The switching time of the transistor is limited in order to average the number of electrons at the collector to allow the emitter-collector current to be a deterministic variable against the quantum stochastic property. The threshold of the switching time is estimated to be of the order of magnitude of 10−11 s for the field emitter reported by C. A. Spindt, I. Brodie, L. Hummphrey, and E. R. Westerberg [J. Appl. Phys. 47, 5248 (1976)].
The interference pattern of coherent electrons is effected by coupling to the quantized electromagnetic field. The amplitudes of the interference maxima are changed by a factor which depends upon a double line integral of the photon two-point function around the closed path of the electrons. The interference pattern is sensitive to shifts in the vacuum fluctuations in regions from which the electrons are excluded. Thus this effect combines aspects of both the Casimir and the Aharonov-Bohm effects. The coupling to the quantized electromagnetic field tends to decrease the amplitude of the interference oscillations, and hence is a form of decoherence. The contributions due to photon emission and to vacuum fluctuations may be separately identified. It is to be expected that photon emission leads to decoherence, as it can reveal which path an electron takes. It is less obvious that vacuum fluctuations also can cause decoherence. What is directly observable is a shift in the fluctuations due, for example, to the presence of a conducting plate. In the case of electrons moving parallel to conducting boundaries, the dominant decohering influence is that of the vacuum fluctuations. The shift in the interference amplitudes can be of the order of a few percent, so experimental verification of this effect may be possible. The possibility of using this effect to probe the interior of matter, e.g., to determine the electrical conductivity of a rod by means of electrons encircling it is discussed. (Presented at the Conference on Fundamental Problems in Quantum Theory, University of Maryland, Baltimore County, June 18-22, 1994.)
Quantum computing promises an exponential speed-up of computation compared to what is nowadays achievable with classical computers. In this way, it enables the evaluation of more complex models and the breaching of current security algorithms. For the operation of a quantum system, many questions remain to be answered. Currently, there are several quantum technologies that promise to be both reliable and scalable, two features required for large scale quantum operations. Common to all technologies is the operating temperature that needs to be close to absolute zero, i.e. below 100 mK, to suppress environment noise and allow the quantum properties to become 'visible'. In order for any quantum processor to be operated, a so-called quantum-classical interface is required for the quantum bit (qubit) read-out and control. This interface consists of various electronic blocks, such as analog-to-digital converters, digital-to-analog converters, mixers, amplifiers and a digital controller. Especially the analog blocks require effort to meet the noise and stability constraints as not to disturb the very sensitive qubits and allow reading of the tiny signals. As the qubits live in extremely deep-cryogenic temperatures, long wires interface the cryogenic with the room temperature environment, where most of the electronics is situated. However, for a scalable system, heat injection becomes a serious problem, with many wires between 300 K and sub-Kelvin. Furthermore, such amount of interconnects is challenging to mechanically place in a dilution refrigerator. Therefore, in this work, we propose to implement the electronics not at room temperature, but at a temperature much closer to the qubits, for example at 4 K. This not only reduces significantly the wiring between room temperature and the qubits, but we can also benefit from lower electronic noise at such a temperature. The operation of conventional electronics almost 200°C below its normal temperature range is not trivial as device properties alter significantly and most circuits no longer operate as intended. In CMOS processes, the main technology in the integrated electronics world, the behaviour of the transistors, required for the implementation of any circuit, deviates considerably at low temperatures. The transistor's threshold voltage goes up, the mobility increases and the subthreshold slope becomes steeper, to name just a few of these deviations. Although there are improvements in performance, there are also some counter effects, and characterization of the transistors is needed to observe the changes. Once devices are characterized at such low temperatures, new models can be built and circuits can be simulated and adapted to operate properly at cryogenic temperatures. Luckily, there are various commercially available devices that can already withstand the chills of cold. We demonstrated various commercially available devices, such as a field-programmable gate array (FPGA) implemented in a 28 nm CMOS process, to be operating without major concerns at 4~K. Its properties alter only slightly, within 5 to 10%, and all tested circuit implementations, working at 300~K, also worked at 4 K. We combined both commercially available devices, that operate 200 K below their specified temperature range, with custom designed CMOS circuits to implement a cryogenic read-out platform for spin qubits. This system comprises amplifiers, an ADC, an FPGA, voltage regulators and a clock generator. It allows to amplify the tiny signal from the qubits and digitize it directly in the FPGA in order to process the data locally at 4~K. This system is one of the first systematic attempts at operating a part of the quantum-classical interface at cryogenic temperatures and forms the basis for future systems comprising the complete electronic interface for qubits to operate at such low temperatures. One of the main problems to tackle for cryogenic electronic systems is their power consumption. Power budgets are simply limited to roughly 1 or 2 Watts at 4 K and exponentially lower at deeper cryogenic temperatures, thus limiting the size of large-scale electronic systems. Our approach of combined commercial and custom circuits will have to be steadily replaced by a single (custom) technology that meets both power and scalability constraints. One of the best candidates is CMOS, a technology that the industry has relied upon for several decades and benefits from many optimizations thanks to Moore's law.
The coupling of the quantized electromagnetic field to coherent electrons is investigated. The effects both of photon emission and of the electromagnetic vacuum fluctuations upon electron interference are analyzed. The modifications of the vacuum fluctuations due to a conducting plate lead to a decrease in the amplitude of the interference oscillations. The possibility of observing this effect is discussed. It is also shown that there is an analogue of the Aharonov-Bohm effect in which electron interference is sensitive to vacuum fluctuations in regions from which the electrons are excluded.
A quantum ring device that can turn on and off the external magnetic field on the ring is developed.The device is to study the effect of the interaction between electrons and external magnetic fields on Aharonov-Bohm interference.The switching is realized by employing a superconducting shield gate and turning on and off the superconductivity on the gate with applied current or magnetic field.The electron interference due to Aharonov-Bohm effect is observed regardless of the presence of the external magnetic field on the electron path of the ring.The result is consistent with the fact that effects of potentials on charged particles exists even in the region where all the field vanish hence no direct interaction between electron and magnetic field is allowed.
The work involves a study of physical phenomena that take place at very small length scales, below one micro-meter. At temperatures roughly below one degree Kelvin, quantum-mechanical effects may rule in electronic transport. Macroscopic quantum-coherent effects that occur in metallic superconducting microstructures, are particularly intriguing. Large-scale quantum information processing is widely believed to be attainable utilizing such physical systems. This work concentrates on answering the question of how the described quantum-mechanical systems may be used as sensitive measuring devices. Considerable attention is paid to energy-storing metallic microstructures whose electrical properties resemble those of the familiar inductor or capacitor. This research involves primarily experimental investigations conducted around temperatures of 0.1 Kelvin. Methods both at low and at radio frequencies have been used. The experimental findings have been modelled theoretically, and theoretical concepts for new physical phenomena have been introduced. An inductively measured radio-frequency Cooper-pair transistor, the L-SET, has been developed and experimentally verified in this work. Being highly sensitive, fast, and non-invasive, the L-SET appears to be the most promising method for measuring electric charge. Sensitivity in charge measurements of 20 millionths of the electron charge (micro-e) within one second, and an input bandwidth of 100 MHz, have been demonstrated. It has been shown theoretically that the ultimate measurement accuracy is about 0.1 micro-e within a second. A new phase detector based on the Cooper-pair transistor has been proposed. This system has also been shown to be potentially usable as a quantum bit. A new type of radio-frequency single-electron transistor built using a multi-walled carbon nanotube has been fabricated and operated. Technologies have been developed in order to make the physical nano- or microstructures. A method has been presented to fabricate non-superconducting tunnel junctions. Consequences of the inverse superconducting proximity effect on the studied superconducting structures were considered. Measurement procedures were investigated for a new low-noise nanoamplifier, the Bloch-oscillating transistor. Single superconducting tunnel junctions were tested as detectors of energy states of the environment, or of noise.
The manipulation of single charge quanta in solid state systems has been a field of active interest for several decades. At the basis of such structures lays the Coulombic repulsion between electrons in a small metallic island yielding the so-called Coulomb-blockade regime. Many quantum phenomena, such as the tunnelling effect or the Josephson coupling in superconducting junctions, have been exploited so far to control the charging state of a conducting island, and enable a number of applications ranging from on-chip cooling and current generation to single-photon detection. Yet, in all Coulombic systems the external control parameters play a crucial role, reaching sometimes a rather complex experimental configuration. Here we show that quantum interference established in a superconducting nanowire can provide a phase-tunable energy barrier which allows charge manipulation with enhanced functionalities. This additional degree of freedom for single electronics stems from the coupling between magnetic flux-dependent proximity effect and charging levels discretization present in a Coulomb-blockaded island. Our quantum interference nanostructure represents the first realization of a superconducting hybrid single-electron transistor called SQUISET in which the charging landscape is phase-coherently manipulated by an external magnetic flux. The interferometric nature of the transistor adds new perspectives to single electronics making it a promising alternative building block in quantum metrology, coherent caloritronics, and quantum information technology.