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Applied Physics Letters

Performance limitations of niobium-based submillimeter-wave quasiparticle mixers operating near the gap frequency

Pascal Febvre, Morvan C. Salez, William R. McGrath, B. Bumble, Henry George LeDuc

Published Jul 17, 1995• 6 citations
Publisher

Abstract

We have measured the noise temperature of heterodyne receivers employing Nb/AlOx/Nb tunnel junction mixers at frequencies ranging from 70% to 93% of the gap frequency of niobium (∼700 GHz). The sensitivity of the receiver is decreased by the overlap of the n=1 and n=2 photon steps of opposite sign. At bias voltages where these photon steps overlap, there is an increase in receiver noise up to 50%. Theoretical calculations using the Tucker theory agree well with the observed mixer performance. This overlap already affects the receiver operation for best performance at frequencies well below 700 GHz.

DOI
10.1063/1.114620

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Applied Physics Letters•Dec 20, 1999•81 citations
We have measured the noise temperature of heterodyne receivers employing Nb/AlOx/Nb tunnel junction mixers at frequencies ranging from 70% to 93% of the gap frequency of niobium (∼700 GHz). The sensitivity of the receiver is decreased by the overlap of the n=1 and n=2 photon steps of opposite sign. At bias voltages where these photon steps overlap, there is an increase in receiver noise up to 50%. Theoretical calculations using the Tucker theory agree well with the observed mixer performance. This overlap already affects the receiver operation for best performance at frequencies well below 700 GHz.
We have developed a process for the fabrication of high-quality Nb/AlOx/Nb tunnel junctions with small area and high current densities for the heterodyne mixers at millimeter and submillimeter wavelengths. Their dc I-V curves are numerically studied, including the broadening of quasiparticle density of states resulting from the existence of an imaginary part of the gap energy of Nb. We have found both experimentally and numerically that the subgap current is strongly dependent on bias voltage at temperatures below 4.2K unlike the prediction of the BCS tunneling theory. It is shown that calculated dc I-V curves taking into account the complex number of the gap energy agree well with those of Nb/AlOx/Nb junctions measured at temperatures from 0.4 to 4.2K. We have successfully built receivers at millimeter and submillimeter wavelengths with the noise temperature as low as 4 times the quantum photon noise, employing those high-quality Nb/AlOx/Nb junctions. Those low-noise receivers are to be installed in the ALMA (Atacama Large Millimeter/Submillimeter Array) telescope and they are going into series production now.
The noise and gain of a heterodyne waveguide mixer using Nb/Al/sub 2/O/sub 3//Nb superconducting tunnel junctions were measured in the 400-500-GHz frequency range. Three different arrays of two junctions in series are analyzed. The minimum receiver noise temperature is 120 K DSB at 480 GHz, measured with an array having integrated tuning stubs. The authors compare data of the pumped I-V curves with the Werthammer-Tucker theory and demonstrate an excellent agreement at frequencies up to 500 GHz. For an array without integrated tuning stubs. a mixer noise temperature of 90+or-30 K and a DSB mixer gain of -12.5+or-0.6 dB were measured. A comparison of the measured gain versus bias voltage with the quantum theory of mixing shows good qualitative agreement, indicating the applicability of this theory to Nb tunnel junctions up to 500 GHz. The noise temperature of an array with a lower gap voltage is 220 K at 495 GHz. This frequency is 85% of the reduced gap frequency, indicating that Nb superconductor insulator-superconductor (SIS) mixers can be used up at least the gap frequency of 680 GHz.>
The noise and gain of a heterodyne waveguide mixer employing Nb/A120JNb superconducting tunnel junc- tions is measured in the 400-500 GHz frequency range. Three different arrays of two junctions in series are analyzed. An array with integrated tuning stubs has lowest receiver noise temperatures of T, = 120 K DSB at 480 GHz, which is to our knowledge the lowest value reported in this frequency range. We compare data of the pumped I-V curves with the Wert- hamer-Tucker theory and demonstrate for the first time an excellent agreement at frequencies up to 500 GHz. For an array without integrated tuning stubs, a mixer noise tempe- rature T- = 90 f 30 K and a DSB mixer gain G-= -12.5 f 0.6 dB is measured. A comparison of the measured gain versus bias voltage with the quantum theory of mixing shows a good qualitative agreement, indicating the applicability of this theory, to Nb tunnel junctions up to 500 GHz. The noise temperature of an array with a lower gap voltage, is 220 K at 495 GHz. This frequency is 85 % of the reduced gap frequen- cy, indicating that Nb SIS mixers can be used up to at least the gap frequency of 680 GHz. I. INTRODUCTION
We report on the continuing development of submillimeter quasi-optical slot antenna SIS mixers which use two-junction tuning circuits [1]. The mixers use 10 kA/cm2 Nb/Al-Oxide/Nb junctions and Nb wiring, and have generated DSB receiver noise temperatures around 5hv/kB to 700 GHz, and 16hv/kB (620 K) at 798 GHz. We present Fourier-transform spectrometer (FTS) measurements and heterodyne measurements on several such devices. In general, the measured response at frequencies below the gap of Nb is in good agreement with the predicted performance. Introduction SIS mixers with Nb-trilayer tunnel junctions offer excellent performance at frequencies below 800 GHz, and should perform competitively at frequencies as high as 1.4 THz [2-5]. Our goal is to develop a suite of ultra-low-noise SIS mixers which cover frequencies from = 400 GHz to more than I THz. At frequencies below the Nb gap (< 700 GHz), existing devices perform quite well [6], but further improvements in noise temperatures remain important. In addition, it is quite useful to be able to predict device performance given the design parameters. One can then optimize the device design for a particular frequency band, and confirm that we indeed understand the physics of the device. Progress in the design and operation of devices in this frequency range is presented below. At frequencies above the Nb gap, RF photons can break Cooper pairs, resulting in greater signal loss and higher receiver noise temperatures. The loss is particularly important in the slender microstrip lines used to resonate the junction capacitance and to transform the antenna impedance down to the RF junction impedance. However, the actual coupling of radiation into Nb junctions above the gap should still be reasonably efficient -more than 30% at 800 GHz [7]. In addition to RF loss, one is also affected by increased dispersion at frequencies near the gap. The Nb microstriplines have therefore been carefully designed to ensure the desired bandpass is achieved. We demonstrate for the first time that all-Nb SIS receivers can have substantially better performance than GaAs Schottky receivers for the astronomically important CI ( P2 — P 1 ) and CO (7-6) transitions near 810 GHz. Receiver Configuration Since waveguide mixers become difficult to construct at short submillimeter wavelengths, we have adopted a quasi-optical approach. Here, lenses take the place of waveguide horns, and the incoming radiation is collected by a planar antenna on the SIS mixer substrate [8]. This offers several other advantages, such as on-chip broad-band silt a SS 114 SSE WA Wa Sta MX Dewar 120 Mylar Window SIS Mixer 295 IQ 77 K Mylar Load Bearnsplitter ICI 1= NZ IC =1 HEN1T Amplifier Polyethylene Lens
We report on low-noise heterodyne mixing with NbN/A1N/NbN tunnel junctions in the submillimeter-wave region for the first time. The receiver consists of the quasi-optical NbN SIS mixer with an integrated tuning circuit in which a radial short stub tuner is incorporated to resonate out the junction capacitance for RF matching and a balanced IF circuit for broadband IF matching. The prepared NbN SIS junction has a current density of 20 kA/cm 2 and is about 1 I1111 in diameter, supplying a small coC JRN product (o)CJRN = 3 at 300 GHz). The junctions showed good dc I-V characteristics, excellent submillimeter-wave responses and sensitive heterodyne mixing responses. From 254 to 350 GHz the average receiver noise temperature measured using by the standard Y-factor method was about 250 K (DSB) at 5 K. The lowest receiver noise temperature, 200 K (DSB), was obtained at around 303 GHz. Comparing NbN/A1N/NbN and Nb/A10x/Nb tunnel junction performance with the same tuning circuit showed that the frequency dependence of the receiver noise temperature agreed well in the two receivers. These results suggest that our well-controlled NbN SIS junctions can be used for terahertz mixer elements instead of Nb SIS junctions.
We have developed a low-noise 850 GHz superconductor–insulator–superconductor quasiparticle mixer with NbTiN thin-film microstrip tuning circuits and hybrid Nb/AlN/NbTiN tunnel junctions. The mixer uses a quasioptical configuration with a planar twin-slot antenna feeding a two-junction tuning circuit. At 798 GHz, we measured an uncorrected double-sideband receiver noise temperature of TRX=260 K at 4.2 K bath temperature. This mixer outperforms current Nb SIS mixers by a factor of nearly 2 near 800 GHz. The high-gap frequency and low loss at 800 GHz make NbTiN an attractive material with which to fabricate tuning circuits for SIS mixers. NbTiN mixers can potentially operate up to the gap frequency, 2Δ/h∼1.2 THz.