Polarisation losses are compared for three- and four-prism resonators and their origin is determined. The methods for reducing the resonator anisotropy and polarisation losses are considered.
Superconducting micro-resonators have application in sensors and quantum computing. Measurement of the resonator internal loss in the single-photon regime is a common tool to study the origins of dissipation, noise, and decoherence in quantum circuits, as well as characterization of materials used for quantum devices. However, such measurements are challenging and time-consuming with large uncertainties due to the poor signal-to-noise ratio when measured at single-photon power levels. We developed methods to extract a subset of the resonator fitting parameters at high power and fix them in the analysis of low power data, which reduce the parameter space in the regression analysis. By comparing the analysis with and without partial extraction, we show that these methods reduce the uncertainty of the results, while improving the robustness and efficiency of the loss measurement.
The improvement of the coherence times of superconducting qubits depends on the reduction of the dielectric losses in the insulating materials implemented for the device fabrication. These losses depend on the density of spurious dipoles of different nature (two-level systems, TLSs) which couple to phase qubits and, hence, limit their coherence times. Hydrogenated amorphous silicon (a-Si:H), because of its lower loss tangent (tan δ) among conventional dielectrics (a-SiO, a-SiO2, a-SiNx:H), is considered as the best amorphous dielectric for superconducting qubit application. We have developed a reliable method for the direct measurement of dielectric losses in amorphous dielectric thin films using a novel design based on four lumped superconducting LC resonators connected in series without coupling capacitors. The losses are obtained as tan δ = 1/Q0, where Q0 is the intrinsic quality factor of the resonator, measured at 3 dB above the resonance frequency without any fitting procedure. The series type LC resonators with a-Si:H as dielectric were fabricated by the Nb technology. The measurements were done at the conditions of a qubit application (0.5 -10 GHz frequency range and low temperatures). The low values of the loss tangent of a-Si:H (up to 2.5 x 10−5 at 4.2 K) have required the development of superconducting housing for the resonators in order to eliminate a spurious dependence of tan δ on the microwave power, by reducing losses which were not originated in the dielectric itself. The results of the simulations agree well with the experiments.