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Physical Review Letters

Nonlinear Pulse Propagation in Semiconductors: Hole Burning within a Homogeneous Line

Jens Förstner, A. Knorr, S. W. Koch

Published Jan 15, 2001• 12 citations
Publisher

Abstract

Features reminiscent of spectral hole burning in a homogeneous line are predicted to result from the interaction of small area pulses with the semiconductor exciton resonance. The small area pulses may be designed through pulse shaping or evolve naturally in bulk semiconductors via polaritonic effects. The spectral features exhibit signatures that are characteristic for the underlying material nonlinearity and should occur in any system with isolated spectral resonances and coherent nonlinearities.

DOI
10.1103/physrevlett.86.476

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Features reminiscent of spectral hole burning in a homogeneous line are predicted to result from the interaction of small area pulses with the semiconductor exciton resonance. The small area pulses may be designed through pulse shaping or evolve naturally in bulk semiconductors via polaritonic effects. The spectral features exhibit signatures that are characteristic for the underlying material nonlinearity and should occur in any system with isolated spectral resonances and coherent nonlinearities.
Pulse time-of-flight measurements at the heavy exciton resonance in GaAs quantum wells reveal large pulse delays which are dependent on intensity and pulse spectral width. The measured pulse velocities are comparable to those seen in bulk GaAs and are as low as 6.7\ifmmode\times\else\texttimes\fi{}106{10}^{6}106cm${\mathrm{s}}^{\ensuremath{-}1}$. We obtain quantitative agreement with a simple theory based on hole burning observed in the inhomogeneous exciton line, and we show that the measurements are useful in estimating exciton damping, under certain conditions.
Femtosecond-pulse propagation in resonantly excited semiconductors is investigated by numerically solving the semiconductor Maxwell-Bloch equations for plane waves. For excitation at the exciton resonance, it is shown that the pulse absorption exhibits a strongly nonlinear dependence on the input pulse area. Very long propagation distances for strong pulses are observed, but even when all dephasing processes have been neglected, no lossless propagation (self-induced transparency) was found. The influence of the electron-hole many-body effects, nonequilibrium carrier relaxation, and optical dephasing on the pulse-propagation dynamics is studied. The exchange interaction in the electron-hole plasma is shown to support large propagation distances. For excitation of the continuum states, the dependence of the absorption on the intensity of the input pulse is reduced due to the rapid carrier relaxation into quasiequilibrium distributions.
Abstract Spectral hole burning is investigated in an optical medium in the presence of Doppler broadening and Kerr nonlinearity. The Kerr nonlinearity generates coherent hole burning in the absorption spectrum. The higher order Kerr nonlinearity enhances the typical lamb dip of the hole. Normal dispersion in the hole burning region while Steep anomalous dispersion between the two hole burning regions also enhances with higher order Kerr effect. A large phase shift creates large delay or advancement in the pulse propagation while no distortion is observed in the pulse. These results provide significant steps to improve optical memory, telecom devices, preservation of information and image quality.
Using laser pulses of duration comparable to semiconductor relaxation and dephasing times, the coherent phenomena common to two-level systems have been demonstrated in II-VI and III-V semiconductors. These light-matter interactions are characterized by electrons and holes in their initially excited states and/or a macroscopic polarization that persists after the excitation. A nonthermal carrier distribution was observed in bulk CdSe, demonstrating the extremely fast energy relaxation possible when carrier-LO-phonon scattering is included. Quantum-confined CdSe microcrystallites were then employed to limit the available decay avenues. The one and two-pair transitions were characterized, and using spectral hole-burning, energy relaxation was shown to be substantially slower than in bulk. Dipole dephasing remained very rapid. Persistent macroscopic polarization was demonstrated in semiconductors through pump and probe experiments conducted on time scales faster than the inverse linewidth of the exciton. In the first set of experiments, it was found that the exciton optical Stark shift deviates from that predicted by a steady-state theory. The shift is smaller than expected and lasts longer than the pump pulse. Both effects are explained by free evolution of the exciton's polarization. Transient exciton bleaching is observed and shown to be a result of adiabatic following. In a second study of coherent polarization, spectral oscillations at negative delay times were studied. Oscillations were measured in a wide variety of semiconductors, temporally preceding several different pump-probe phenomena. By comparison with a semiclassical theory, it was shown that spectral oscillations in the spectral region of the exciton are evidence of persistent exciton polarization. Oscillations in the band are due to four wave mixing of the pump and probe beams.