Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Semiconductor Science and Technology

Numerical study of a quantum dot structure for entanglement generation

G. Giavaras

Published Jun 24, 2008• 2 citations
Publisher

Abstract

It has been suggested (Giavaras et al 2007 Phys. Rev. B 75 085302) that a quantum dot structure, which consists of a small open dot formed within a larger dot, can generate spin entanglement between two electrons and filter singlet–triplet states as a consequence of Coulomb interaction and the Pauli exclusion principle. In this work, we show via numerical modelling how to form the dot structure in an AlGaAs/GaAs/AlGaAs quasi-one-dimensional channel using top and back gates. We calculate the confining potential of the dot and the corresponding low-lying two-electron states and demonstrate a way of controlling the degree of entanglement and filtering by tuning the dot potential with the voltage applied to a back gate.

DOI
10.1088/0268-1242/23/8/085010

Related papers

Singlet-triplet filtering and entanglement in a quantum dot structure

G. Giavaras, J. H. Jefferson, M. Fearn +1 more

We consider two interacting electrons in a semiconductor quantum dot structure, which consists of a small dot within a larger dot, and demonstrate a singlet-triplet filtering mechanism which involves spin-dependent resonances and can generate entanglement. By studying the exact time evolution of singlet and triplet states we show how the degree of both filtering and spin entanglement can be tuned using a time-dependent gate voltage.

arXiv:cond-mat/0611207•Physical Review B•Feb 1, 2007•15 citations

Entangled electronic state via an interacting quantum dot

Gabriela Arias León, Otto Rendón, Horacio M. Pastawski +2 more

We study a device for entangling electrons as co-tunneling occurs through a quantum dot where on-site electron-electron interactions U are in place. The main advantage of this device is that single-particle processes are forbidden by energy conservation as proposed by Oliver et al. ( Phys. Rev. Lett. 88 (2002) 7901). Within this model we calculated the two-electron transition amplitude, in terms of the T-matrix, to all orders in the coupling to the dot, and consider a finite lead bandwidth. The model filters singlet entangled pairs with the sole requirement of Pauli principle. Feynman paths involving consecutive and doubly occupied dot interfere destructively and produce a transition amplitude minimum at a critical value of the onsite repulsion U . Singlet filtering is demonstrated as a function of a gate voltage applied to the dot with a special resonance condition when the dot levels are symmetrically placed about the input lead energy.

arXiv:cond-mat/0402603•Europhysics Letters (EPL)•May 27, 2004•4 citations

Generation of spin entanglement in nonequilibrium quantum dots

Stefan Legel, Jürgen König, Guido Burkard +1 more

We propose schemes for generating spatially separated spin entanglement in systems of two quantum dots with onsite Coulomb repulsion weakly coupled to a joint electron reservoir. An enhanced probability for the formation of spin entanglement is found in nonequilibrium situations with one extra electron on each dot, either in the transient state after rapid changes of the gate voltage or in the steady state with applied bias voltage. In both cases, so-called Werner states with spin-singlet fidelity exceeding $1∕2$ are generated, which indicates entanglement.

arXiv:cond-mat/0612452•Physical Review B•Aug 22, 2007•19 citations

Prediction of the spin triplet two-electron quantum dots in Si: Towards controlled quantum simulations of magnetic systems

Dmitry Miserev, Oleg P. Sushkov

The ground state of two-electron quantum dots in single-valley materials like GaAs is always a spin singlet regardless of what the potential and interactions are. This statement cannot be generalized to the multivalley materials like $n$-doped Si. Here we calculate numerically the spectrum of a two-electron Si quantum dot and show that the dot with the lateral size of several nm can have the spin triplet ground state which is impossible in the single-valley materials. Predicted singlet-triplet level crossing in two-electron Si quantum dots can potentially establish the platform for quantum simulation of magnetic many body systems based on quantum dots. We suggest several examples of such systems that open a way to controlled quantum simulations within the condensed matter setting.

arXiv:1908.02543•Physical review. B./Physical review. B•Nov 20, 2019•4 citations

Quantum entanglement in lateral GaAs/AlGaAs quantum dot molecules

Vlastimil Křápek, Petr Klenovský, Armando Rastelli +2 more

We calculate the excitonic structure of pairs of GaAs/AlGaAs quantum dots forming lateral molecules and obtain the entanglement of exciton states. The following advantages of the lateral geometry over the vertical one are found: (1) The energy structures of the dots forming a molecule can be in principle identical. (2) Comparable tunneling of electrons and holes ensures a high entanglement of antisymmetric excitons. A drawback of existing structures are very low tunneling energies, which make the entanglement vulnerable against differences in the sizes and shapes of both dots.

Journal of Physics Conference Series•Sep 1, 2010•16 citations

Toward the manipulation of a single spin in an AlGaAs/GaAs single-electron transistor

Sami Amasha, Kenneth MacLean, Dominik M. Zumbühl +4 more

Single-electron transistors (SETs) are attractive candidates for spin qubits. An AlGaAs/GaAs SET consists of a confined two-dimensional droplet of electrons, called an artificial atom or quantum dot, coupled by tunnel barriers to two conducting leads. Controlling the voltages on the lithographic gates that define the quantum dot allows us to confine a single electron in the dot, as well as to adjust the tunnel barriers to the leads. By applying a magnetic field, we can split the spin-up and spin-down states of the electron by an energy |g|μBB; the goal is to utilize coherent superpositions of these spin states to construct a qubit. We will discuss our attempts to observe electron spin resonance (ESR) in this system by applying magnetic fields at microwave frequencies. Observation of ESR would demonstrate that we can manipulate a single spin and allow us to measure the decoherence time T2*.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•May 5, 2006•6 citations
It has been suggested (Giavaras et al 2007 Phys. Rev. B 75 085302) that a quantum dot structure, which consists of a small open dot formed within a larger dot, can generate spin entanglement between two electrons and filter singlet–triplet states as a consequence of Coulomb interaction and the Pauli exclusion principle. In this work, we show via numerical modelling how to form the dot structure in an AlGaAs/GaAs/AlGaAs quasi-one-dimensional channel using top and back gates. We calculate the confining potential of the dot and the corresponding low-lying two-electron states and demonstrate a way of controlling the degree of entanglement and filtering by tuning the dot potential with the voltage applied to a back gate.
We study a device for entangling electrons as co-tunneling occurs through a quantum dot where on-site electron-electron interactions U are in place. The main advantage of this device is that single-particle processes are forbidden by energy conservation as proposed by Oliver et al. ( Phys. Rev. Lett. 88 (2002) 7901). Within this model we calculated the two-electron transition amplitude, in terms of the T-matrix, to all orders in the coupling to the dot, and consider a finite lead bandwidth. The model filters singlet entangled pairs with the sole requirement of Pauli principle. Feynman paths involving consecutive and doubly occupied dot interfere destructively and produce a transition amplitude minimum at a critical value of the onsite repulsion U . Singlet filtering is demonstrated as a function of a gate voltage applied to the dot with a special resonance condition when the dot levels are symmetrically placed about the input lead energy.
We propose schemes for generating spatially separated spin entanglement in systems of two quantum dots with onsite Coulomb repulsion weakly coupled to a joint electron reservoir. An enhanced probability for the formation of spin entanglement is found in nonequilibrium situations with one extra electron on each dot, either in the transient state after rapid changes of the gate voltage or in the steady state with applied bias voltage. In both cases, so-called Werner states with spin-singlet fidelity exceeding 1∕21∕21∕2 are generated, which indicates entanglement.
The ground state of two-electron quantum dots in single-valley materials like GaAs is always a spin singlet regardless of what the potential and interactions are. This statement cannot be generalized to the multivalley materials like nnn-doped Si. Here we calculate numerically the spectrum of a two-electron Si quantum dot and show that the dot with the lateral size of several nm can have the spin triplet ground state which is impossible in the single-valley materials. Predicted singlet-triplet level crossing in two-electron Si quantum dots can potentially establish the platform for quantum simulation of magnetic many body systems based on quantum dots. We suggest several examples of such systems that open a way to controlled quantum simulations within the condensed matter setting.
We calculate the excitonic structure of pairs of GaAs/AlGaAs quantum dots forming lateral molecules and obtain the entanglement of exciton states. The following advantages of the lateral geometry over the vertical one are found: (1) The energy structures of the dots forming a molecule can be in principle identical. (2) Comparable tunneling of electrons and holes ensures a high entanglement of antisymmetric excitons. A drawback of existing structures are very low tunneling energies, which make the entanglement vulnerable against differences in the sizes and shapes of both dots.
Single-electron transistors (SETs) are attractive candidates for spin qubits. An AlGaAs/GaAs SET consists of a confined two-dimensional droplet of electrons, called an artificial atom or quantum dot, coupled by tunnel barriers to two conducting leads. Controlling the voltages on the lithographic gates that define the quantum dot allows us to confine a single electron in the dot, as well as to adjust the tunnel barriers to the leads. By applying a magnetic field, we can split the spin-up and spin-down states of the electron by an energy |g|μBB; the goal is to utilize coherent superpositions of these spin states to construct a qubit. We will discuss our attempts to observe electron spin resonance (ESR) in this system by applying magnetic fields at microwave frequencies. Observation of ESR would demonstrate that we can manipulate a single spin and allow us to measure the decoherence time T2*.