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Journal of Applied Physics

On-chip radiation detection from stacked Josephson flux-flow oscillators

S. V. Shitov, Alexey Vladimirovich Ustinov, N. N. Iosad, H. Kohlstedt

Published Dec 15, 1996• 10 citations
Publisher

Abstract

Radiation measurements with double-junction stacked Josephson flux-flow oscillator on-chip coupled to a superconductor–insulator–superconductor detector are reported. Impedance matching between the oscillator and the detector has been achieved using a broad band coupling circuit. Radiation power in the detector up to 10 nW has been measured in the frequency range between 170 and 410 GHz. Coherent radiation from two stacked junctions has been observed both at the fundamental Josephson frequency and at its second harmonic. The distribution of the radiation power between the first two harmonics allows us to distinguish between mutually coupled in-phase and out-of-phase flux-flow modes in the junctions. Coherent operation of stacked Josephson junction oscillators in the millimeter and sub-millimeter wave band is demonstrated.

DOI
10.1063/1.363734

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IEEE Transactions on Applied Superconductivity•Mar 1, 1993•67 citations
Radiation measurements with double-junction stacked Josephson flux-flow oscillator on-chip coupled to a superconductor–insulator–superconductor detector are reported. Impedance matching between the oscillator and the detector has been achieved using a broad band coupling circuit. Radiation power in the detector up to 10 nW has been measured in the frequency range between 170 and 410 GHz. Coherent radiation from two stacked junctions has been observed both at the fundamental Josephson frequency and at its second harmonic. The distribution of the radiation power between the first two harmonics allows us to distinguish between mutually coupled in-phase and out-of-phase flux-flow modes in the junctions. Coherent operation of stacked Josephson junction oscillators in the millimeter and sub-millimeter wave band is demonstrated.
Radiation measurements with a double-junction stacked Josephson flux-flow oscillator on-chip coupled to an SIS detector are reported. Impedance matching between the oscillator and the detector has been achieved using a broad band coupling circuit. Radiation power in the detector up to 10 nW has been measured in the frequency range between 170 and 410 GHz. Coherent radiation from two stacked junctions has been observed both at the fundamental Josephson frequency and at its second harmonic. The distribution of the radiation power between first two harmonics allows us to distinguish between mutually coupled in-phase and out-of-phase flux-flow modes in the junctions. Coherent operation of stacked Josephson junction oscillators in the millimeter and sub-millimeter wave band is demonstrated.
The authors report on the coupling of millimeter and submillimeter waves from a long (3- mu m*350- mu m) Josephson junction to a small (2- mu m*2- mu m) superconductor-insulator-superconductor (SIS) junction by using a center-fed interdigital capacitor. Coupled power at around 100 GHz and 261 GHz was observed. Experiments confirm that the critical current density j/sub c/ of a long junction determines the fluxon motion. Coupled irradiation (>3nW) at around 100 GHz, which corresponds to resonant soliton oscillations in low j/sub c/ samples (250 A/cm/sup 2/ to 1000 A/cm/sup 2/), is detected by the SIS junction. The incident power to the SIS detector junction could be tuned with only little frequency pulling by adjusting the current bias of the oscillator. For j/sub c/>1000 A/cm/sup 2/, coupled radiation at around 100 GHz (about 3 nW) and 261 GHz (4.6 nW), from flux-flow oscillations, is also clearly seen. Flux-flow radiation at 350 GHz is also observed. It is concluded that a large j/sub c/ value is preferable for high-frequency flux-flow oscillators.>
Josephson flux-flow oscillators (FFOs) have been used as an on-chip local oscillator at frequencies up to 650 GHz. An autonomous FFO linewidth of about 1 MHz was measured in the resonant regime at V b <950 µV for niobium-aluminium oxide-niobium tunnel junctions, while considerably larger values were reported at higher voltages. To overcome this fundamental linewidth broadening we propose an on-chip Cherenkov radiation flux-flow oscillator (CRFFO). It consists of a long Josephson junction and a superconducting slow-wave transmission line that modifies significantly the junction dispersion relation. Two superconductor-insulator-superconductor junction detectors are connected to both the long Josephson junction and the slow-wave line to determine the available microwave power. The power is measured at different CRFFO biasing conditions. Both a forward wave and a backward wave oscillation regime are observed. An FFO and a CRFFO with the same junction parameters are compared.
We have investigated the mutual phase interaction between a single detector junction and a phase-locked three-junction array of high-T/sub c/ Josephson junctions. The YBCO Josephson junctions were fabricated on a MgO bicrystal substrate. In the array junction structure, the dc bias current was fed to the junction array having parallel geometry with each pair of junctions shunted by a superconducting coplanar microstrip superconducting loop. The configuration of bias leads was a series connection of interlocking dc SQUIDs geometry which enables all junctions to oscillate at the same frequency. We measured the radiation power of a Josephson-junction array using an off-chip coupled to a radiometer and on-chip coupled to a single junction from centimeter- to millimeter-wave ranges. Clear self-induced Shapiro steps were observed in the current-voltage curves of the detector junction. The power transfered to the single detector junction was estimated from the modulation of Shapiro step height. The maximum detected power level was about 7 nW at frequency 150-250 GHz. The Josephson oscillation power excited the resonant mode coupled to the coplanar microstrip loops.
To develop an efficient local oscillator (LO) operating above 0.7 THz, the gap frequency of Nb, on a same chip with a SIS mixer, we have investigated the radiation power P of NbN-based flux-flow-type Josephson oscillators (FF0s). The designed and fabricated chip incorporates FF0s, SIS power detectors (DETs), and their coupling circuits. Both FFOs and DETs consist of epitaxial NbNIA1N/NbN junctions with high critical current density (15 200 nW, enough for the optimum pumping of a SIS mixer with if-resistance of 50 Q, is coupled to DETs in the frequency range of 0.5-0.9 THz. The coupling bandwidth is larger than 20% of its central frequency. In the band, the radiation frequency is tuned by the control current through the FFO in the range of 10-100 mA. The peak power >1 [AV is detected at 0.76THz. In addition, the dissipated power in a FFO is smaller than 500 [LW, which is less than 10 -4 of that of semiconductor sources. These experimental results indicate that FFOs with high-fc NbN/A1N1NbN junctions are applicable for an on-chip LO above 0.7 THz.
All-refractory material superconducting millimeter-wave oscillators have been designed and investigated experimentally with different superconductor-insulator-superconductor (SIS) mixers integrated on the same chip. Tested structures include a flux-flow oscillator (FFO) based on a long Josephson junction, a coupling section, and an SIS detector with tuned out junction capacitance. Coupling sections were designed as multistep microstrip quarter-wave impedance transformers. All junctions have been fabricated on the basis of a high-quality trilayer Nb-AlO/sub x/-Nb process. Microwave oscillations in the frequency range 75-500 GHz have been detected experimentally. The level of delivered power was estimated from the pumped I-V curve of the strongly coupled single junction detector. Coupled power levels higher than 0.1 mu W at 256 GHz were achieved. A spectral linewidth of the FFO of less than 1 MHz has been estimated experimentally. The first attempt to create an integrated receiver based on an FFO and an SIS array mixer integrated on the same chip was made in the 2-mm wavelength band.>