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Applied Physics Letters

Ultrafast cross saturation dynamics in inhomogeneously broadened InAs/InP quantum dash optical amplifiers

Amir Capua, G. Eisenstein, Johann Peter Reithmaier

Published Mar 7, 2011• 10 citations
Publisher

Abstract

We describe multiwavelength pump probe characterization of an inhomogeneously broadened semiconductor nanostructure gain medium. An InAs/InP quantum-dash optical amplifier is perturbed by a 100 fs pulse and the response is measured at wavelengths outside the homogeneously broadened spectral region. Energy dependent carrier cross relaxation as well as capture and escape processes are investigated and quantified.

DOI
10.1063/1.3564901

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We describe multiwavelength pump probe characterization of an inhomogeneously broadened semiconductor nanostructure gain medium. An InAs/InP quantum-dash optical amplifier is perturbed by a 100 fs pulse and the response is measured at wavelengths outside the homogeneously broadened spectral region. Energy dependent carrier cross relaxation as well as capture and escape processes are investigated and quantified.
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We describe a unique phenomenon occurring in InAs/InP quantum dash amplifiers: a nearly instantaneous gain response taking place across the entire inhomogeneously broadened gain spectrum. The phenomenon is induced by a 100–150 fs pulse and is observable using multiwavelength pump probe measurements. Large bias levels and an intense pump pulse are imperative for enacting the ultrafast mechanism which is due to a combination of the gain inhomogeneity, nonlinear two photon absorption and the quantum wirelike density of state function.