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Physical review. B, Condensed matter

Mean-field hopping solution in the Anderson-Hubbard model

R. Allub

Published May 1, 1988• 3 citations
Publisher

Abstract

The tight-binding diagonally disordered Anderson model with on-site Coulomb interaction is solved in the mean-field hopping approach. Phase diagrams of the metal-insulator transition are obtained from the free energy for the half-filled band and the binary-alloy distribution. For attractive interaction (U<0), the Coulomb term gives additional localizing effect and for some values of the microscopic parameters the temperature induced two transitions (insulator to metal to insulator). For U>0 two different types of behavior are distinguished. For small disorder (W\ensuremath{\le}U/2), the metallic phase can be induced by disorder, while for large W, the disorder always destroys the phase of extended states.

DOI
10.1103/physrevb.37.7815

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The tight-binding diagonally disordered Anderson model with on-site Coulomb interaction is solved in the mean-field hopping approach. Phase diagrams of the metal-insulator transition are obtained from the free energy for the half-filled band and the binary-alloy distribution. For attractive interaction (U<0), the Coulomb term gives additional localizing effect and for some values of the microscopic parameters the temperature induced two transitions (insulator to metal to insulator). For U>0 two different types of behavior are distinguished. For small disorder (W\ensuremath{\le}U/2), the metallic phase can be induced by disorder, while for large W, the disorder always destroys the phase of extended states.
We study the ground-state phase diagram of the Anderson-Hubbard model with correlated hopping at half-filling in one dimension. The Hamiltonian has a local Coulomb repulsion UUU and a disorder potential with local energies randomly distributed in the interval $(\ensuremath{-}W,+W)$ with equal probability, acting on the singly occupied sites. The hopping process which modifies the number of doubly occupied sites is forbidden. The hopping between nearest-neighbor singly occupied and empty sites or between singly occupied and doubly occupied sites has the same amplitude ttt. We identify three different phases as functions of the disorder amplitude WWW and Coulomb interaction strength U>0U>0U>0. When U<4tU<4tU<4t the system shows a metallic phase: (i) only when no disorder is present W=0W=0W=0 or an Anderson-localized phase, (ii) when disorder is introduced $W\ensuremath{\ne}0$. When U>4tU>4tU>4t the Anderson-localized phase survives as long as disorder effects dominate on the interaction effects, otherwise a Mott-insulator phase (iii) arises. Phases (i) and (ii) are characterized by a finite density of doublons and a vanishing charge gap among the ground state and the excited states. Phase (iii) is characterized by the vanishing density of doublons and a finite gap for the charge excitations.
Strongly correlated fermions in a crystal or in an optical lattice in the presence of binary-alloy disorder are investigated. We employ the statistical dynamical mean-field theory, which incorporates both fluctuations due to disorder and local correlations due to interaction, to solve the Anderson-Hubbard model. Localization due to disorder is studied by means of the probability distribution function of the local density of states. We obtain a complete paramagnetic ground state phase diagram consisting of disordered correlated metal, Anderson-Mott insulator, and band insulator.
We investigate the effects of Coulomb disorder on the half-filled ionic Hubbard model within the framework of dynamical mean-field theory (DMFT), using the equation-of-motion method as the impurity solver, combined with typical medium theory (TMT). In contrast to conventional disordered Hubbard models, the ionic Hubbard model contains a staggered ionic potential that introduces additional competition between band-insulating and correlation-driven insulating tendencies. We analyze how this ionic potential modifies the electronic phases induced by Coulomb disorder through the arithmetic and geometric averages of the local density of states. In the absence of disorder, the system exhibits metallic (M), Mott-insulating (MI), and band-insulating (BI) phases. When Coulomb disorder is introduced, Anderson-insulating (AI) behavior and localized states (LS) inside the Mott gap are also observed. In particular, the LS regime appears between the metallic and Mott-insulating phases at small ionic potentials, whereas the AI regime develops for sufficiently large values of the Coulomb interaction and ionic potential. Our results show that the interplay between ionic potential, electron correlation, and disorder substantially influences the localization behavior and insulating characteristics of the ionic Hubbard model.
We derive the disorder vs doping phase diagram of the doped Hubbard model via dynamical mean-field theory combined with typical medium theory, which allows the description of both Mott (correlation driven) and Anderson (disorder driven) metal-insulator transitions. We observe a transition from a metal to an Anderson-Mott insulator for increasing disorder strength at all interactions. In the weak correlation regime and rather small doping, the Anderson-Mott insulator displays properties which are similar to the ones found at half filling. In particular, this phase is characterized by the presence of empty sites. If we further increase either the doping or the correlation, however, an Anderson-Mott phase of a different kind arises for sharply weaker disorder strength. This phase occupies the largest part of the phase diagram in the strong-correlation regime and is characterized by the absence of the empty sites.
We study the Anderson-Hubbard model to examine the interplay between the disordered potential and the Hubbard interactions. We use the dynamical mean-field theory (DMFT) with an exact diagonalization as an impurity solver to effectively deal with the quantum fluctuations due to the local interactions. In order to characterize the paramagnetic metal-insulator transition in disordered systems, we compute the typical local density of states, as well as the arithmetically-averaged local density of states. Our approach is found to reproduce the characteristic features of the metal-insulator transition in infinite dimensions, such as the existence of the disorder-driven metallic phase for moderate values of disorder strength and interactions, as observed in earlier studies. In two dimensions, the system turns out to exhibit more insulating behavior when we increase the cluster size in the cellular DMFT. The metallic phase, which is induced from weak Mott insulators by the introduction of a disordered potential, is not observed in two dimensions.