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Applied Physics Letters

Low-frequency phase locking in high-inductance superconducting nanowires

Robert H. Hadfield, Aaron Miller, Sae Woo Nam, Richard L. Kautz, Robert E. Schwall

Published Nov 7, 2005• 53 citations
Publisher

Abstract

Niobium nitride nanowires show considerable promise as high-speed single-photon detectors. We report the observation of an anomalous low-frequency (∼10MHz) response in long, superconducting NbN nanowires (100nm wide, 4nm thick, and 500μm long). This behavior, although strikingly reminiscent of the ac Josephson effect, can be explained by a relaxation oscillation resulting from the high kinetic inductance of the type II nanowire. We simulate all of the observed effects using a simple resistive-hotspot/series-inductor model. The voltage pulses observed are indistinguishable from the pulses induced by visible photons, and our observations suggest noise-induced relaxation oscillations are one mechanism for the dark counts in photon detectors.

DOI
10.1063/1.2130525

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Niobium nitride nanowires show considerable promise as high-speed single-photon detectors. We report the observation of an anomalous low-frequency (∼10MHz) response in long, superconducting NbN nanowires (100nm wide, 4nm thick, and 500μm long). This behavior, although strikingly reminiscent of the ac Josephson effect, can be explained by a relaxation oscillation resulting from the high kinetic inductance of the type II nanowire. We simulate all of the observed effects using a simple resistive-hotspot/series-inductor model. The voltage pulses observed are indistinguishable from the pulses induced by visible photons, and our observations suggest noise-induced relaxation oscillations are one mechanism for the dark counts in photon detectors.
We modeled the response of superconducting nanowire single-photon detectors during a photodetection event, taking into consideration only the thermal and electrical properties of a superconducting NbN nanowire on a sapphire substrate. Our calculations suggest that heating which occurs after the formation of a photo-induced resistive barrier is responsible for the generation of a measurable voltage pulse. We compared this numerical result with experimental data of a voltage pulse from a slow device, i.e. large kinetic inductance, and obtained a good fit. Using this electro-thermal model, we estimated the temperature rise and the resistance buildup in the nanowire, and the return current at which the nanowire becomes superconducting again. We also show that the reset time of these photodetectors can be decreased by the addition of a series resistance and provide supporting experimental data. Finally we present preliminary results on a detector latching behavior that can also be explained using the electro-thermal model.
We demonstrate laser-induced relaxation oscillations in superconducting nanowire single-photon detectors (SNSPDs). These oscillations appear when a voltage-biased Nb Ti N nanobridge detector is illuminated with intense pulsed-laser light at a repetition rate of approximately 19 MHz . They differ from the well-known relaxation oscillations by a stepwise increase in frequency and phase locking of the oscillations to the laser pulses. We create a model that incorporates electrical feedback and excludes thermal effects to simulate and explain the origin of the observed laser-induced relaxation oscillations. Qualitative agreement to the experiment is achieved using realistic values for the parameters in the model.
NbN superconducting single-photon detectors (SSPDs) are very promising devices for their picosecond response time, high intrinsic quantum efficiency, and high signal-to-noise ratio within the radiation wavelength from ultraviolet to near infrared (0.4 gm to 3 gm) [1-3]. The single photon counting property of NbN SSPDs have been investigated thoroughly and a model of hotspot formation has been introduced to explain the physics of the photon- counting mechanism [4-6]. At high incident flux density (many-photon pulses), there are, of course, a large number of hotspots simultaneously formed in the superconducting stripe. If these hotspots overlap with each other across the width w of the stripe, a resistive barrier is formed instantly and a voltage signal can be generated. We assume here that the stripe thickness d is less than the electron diffusion length, so the hotspot region can be considered uniform. On the other hand, when the photon flux is so low that on average only one hotspot is formed across w at a given time, the formation of the resistive barrier will be realized only when the supercurrent at sidewalks surpasses the critical current (jr) of the superconducting stripe [1]. In the latter situation, the formation of the resistive barrier is associated with the phase-slip center (PSC) development. The effect of PSCs on the suppression of superconductivity in nanowires has been discussed very recently [8, 9] and is the subject of great interest.
We characterize inductors fabricated from ultra-thin, approximately 100 nm wide strips of niobium (Nb) and niobium nitride (NbN). These nanowires have a large kinetic inductance in the superconducting state. The kinetic inductance scales linearly with the nanowire length, with a typical value of 1 nH µm(-1) for NbN and 44 pH µm(-1) for Nb at a temperature of 2.5 K. We measure the temperature and current dependence of the kinetic inductance and compare our results to theoretical predictions. We also simulate the self-resonant frequencies of these nanowires in a compact meander geometry. These nanowire inductive elements have applications in a variety of microwave frequency superconducting circuits.
We study the reset dynamics of niobium (Nb) superconducting nanowire single-photon detectors (SNSPDs) using experimental measurements and numerical simulations. The numerical simulations of the detection dynamics agree well with experimental measurements, using independently determined parameters in the simulations. We find that if the photon-induced hotspot cools too slowly, the device will latch into a dc resistive state. To avoid latching, the time for the hotspot to cool must be short compared to the inductive time constant that governs the resetting of the current in the device after hotspot formation. From simulations of the energy relaxation process, we find that the hotspot cooling time is determined primarily by the temperature-dependent electron-phonon inelastic time. Latching prevents reset and precludes subsequent photon detection. Fast resetting to the superconducting state is, therefore, essential, and we demonstrate experimentally how this is achieved. We compare our results to studies of reset and latching in niobium nitride SNSPDs.
The superconducting nanowire single photon detector (SNSPD) is currently one of the best detectors with comprehensive performance in the mid-infrared wavelength, which has been widely used in quantum optics, LiDAR, and biological fluorescence detection. To develop new devices with excellent performance, the photon detection mechanism of SNSPD still needs further research. Here we find that the single quantum phase slip is the dominating mechanism leading to dark-count and photon-response events in SNSPD below the quantum temperature. We fabricate the nanowire with a length of 7.5 μm and a width of 25 nm using niobium nitride film with a thickness of 5 nm. The distribution of the superconducting switching current is measured as a function of temperature at temperatures ranging from 0.3 to 7 K. We observe single quantum phase slips in the nanowire at the temperature below 1.2 K, and we further investigate the quantitative relationship between the single quantum phase slip rate and the superconducting switching rate of the nanowire under the laser illumination. Experimental results show that the single quantum phase slip is a significant factor leading to photon response and dark counts in the nanowire below the quantum temperature. Our research helps to further reveal the photon detection mechanism of the SNSPD, laying a theoretical foundation for the development of high-performance SNSPD.