Soviet Journal of Quantum Electronics
Degradation of the electronic excitation of the4F3/2state of Nd3+ions in a γ-La2S3single crystal
A.A. Kamarzin, A. A. Mamedov, Valerii A Smirnov, Vladimir V. Sokolov, Ivan A Shcherbakov
Abstract
An investigation is made of processes of population and relaxation of the 4F3/2 neodymium upper active level in a γ-La2S3 semiconductor single crystal and the energy transfer microparameters are determined. Nonradiative transfer of energy from a continuous set of traps to the 4F3/2 upper active level of neodymium was observed when the sample was excited with λ = 0.53 μ radiation and cross relaxation from excited states located above the 4F3/2 upper active level was identified.